DSEP60-12AR

DSEP60-12AR HiPerFRED VRRM = 1200 V I FAV = 60 A t rr = 40 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP60-12AR Backside: isolated 3 1 Features / Advantages: Applications: Package: ISOPLUS247 ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Backside: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220610c DSEP60-12AR Ratings Fast Diode Conditions Symbol VRSM max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1200 IR reverse current, drain current VR = 1200 V TVJ = 25°C 650 µA VR = 1200 V TVJ = 150°C 2,5 mA TVJ = 25°C 2,66 V 3,18 V 1,81 V VF Definition IF = forward voltage drop min. 60 A typ. I F = 120 A IF = TVJ = 150 °C 60 A I F = 120 A I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 85°C rectangular max. Unit 1200 V V 2,40 V T VJ = 175 °C 60 A TVJ = 175 °C 1,08 V 9,4 mΩ d = 0.5 for power loss calculation only 0,65 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = 600 V f = 1 MHz TVJ = 25°C 30 pF I RM max. reverse recovery current TVJ = 25 °C 13 A t rr reverse recovery time IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved 0,25 TC = 25°C I F = 60 A; VR = 600 V -di F /dt = 200 A/µs 230 500 W A TVJ = 100°C 20 A TVJ = 25 °C 80 ns TVJ = 100°C 220 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20220610c DSEP60-12AR Package Ratings ISOPLUS247 Symbol I RMS Definition Conditions RMS current per terminal TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 min. typ. max. 70 Unit A -55 175 °C -55 150 °C 150 °C 6 Weight FC 20 mounting force with clip d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL t = 1 minute 120 N terminal to terminal 5,4 mm terminal to backside 4,1 mm t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL ≤ 1 mA 3600 V 3000 V Product Marking IXYS Logo ISOPLUS® XXXXXXXXX yywwZ Part Number Date Code 1234 Lot# Location Ordering Standard Ordering Number DSEP60-12AR Similar Part DSEP60-12A DHG60I1200HA DSEP60-12B Equivalent Circuits for Simulation I V0 R0 Marking on Product DSEP60-12AR Package TO-247AD (2) TO-247AD (2) TO-247AD (2) * on die level Delivery Mode Tube Code No. 481939 Voltage class 1200 1200 1200 T VJ = 175 °C Fast Diode V 0 max threshold voltage 1,08 V R 0 max slope resistance * 6,8 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20220610c DSEP60-12AR Outlines ISOPLUS247 A2 E E1 D2 A Q Dim. D D3 D1 R A A1 A2 b b2 b4 c D D1 D2 D3 E E1 e L L1 Q R W 2 3 b4 L L1 1 2x b 2x b2 c Die Gehäuseabmessungen entsprechen dem Typ TO-247 AD gemäß JEDEC außer Schraubloch und Lmax. This drawing will meet all dimensions requiarement of JEDEC outline TO-247 AD except screw hole and except Lmax. W 3 © 2022 IXYS all rights reserved Inches min max 0.190 0.205 0.090 0.100 0.075 0.085 0.045 0.055 0.075 0.087 0.115 0.128 0.024 0.033 0.819 0.840 0.620 0.640 0.065 0.085 0.799 0.815 0.620 0.635 0.520 0.540 0.429 BSC 0.780 0.811 0.150 0.172 0.220 0.244 0.167 0.217 0.004 Die konvexe Form des Substrates ist typ. < 0.04 mm über der Kunststoffoberfläche der Bauteilunterseite The convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side e A1 IXYS reserves the right to change limits, conditions and dimensions. Millimeter min max 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.20 2.92 3.24 0.61 0.83 20.80 21.34 15.75 16.26 1.65 2.15 20.30 20.70 15.75 16.13 13.21 13.72 10.90 BSC 19.81 20.60 3.81 4.38 5.59 6.20 4.25 5.50 0.10 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20220610c DSEP60-12AR Fast Diode 100 10 TVJ = 150°C 100°C 25°C 80 100 TVJ = 100°C VR = 600 V 8 80 IF = 120 A 60 A 30 A IF 60 Qr 6 [A] 40 [µC] 4 [A] 40 20 2 20 0 0 1 2 IF = 120 A 60 A 30 A IR 60 0 100 3 TVJ = 100°C VR = 600 V 0 1000 0 200 280 TVJ = 100°C IF = 60 A 80 IF = 120 A 60 A 30 A tr 0.8 VFR [ns] trr [µs] [V] 200 IRM 1000 1.2 1.5 Kf 1.0 800 120 TVJ = 100°C VR = 600 V 240 600 Fig. 3 Typ. peak reverse current IRM versus -diF /dt Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt 2.0 400 -diF /dt [A/µs] -diF /dt [A/µs] VF [V] Fig. 1 Forward current IF versus VF 40 0.4 0.5 Qr 0.0 0 40 80 120 160 160 0 200 400 600 800 1000 0 -diF /dt [A/µs] TVJ [°C] Fig. 4 Typ. dynamic parameters Qr, IRM versus TVJ trr VFR 0 200 400 600 800 0.0 1000 -diF /dt [A/µs] Fig. 6 Typ peak forward voltage VFR and tfr versus diF /dt Fig. 5 Typ. recovery time trr versus -diF /dt 0.8 0.6 ZthJC Constants for ZthJC calculation: 0.4 [K/W] 0.2 0.0 1 10 100 1000 i Rthi (K/W) ti (s) 1 0.0500 0.0020 2 0.1000 0.0050 3 0.2000 0.0400 4 0.3000 0.1800 10000 t [ms] Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220610c