DSEP8-02A

DSEP 8-02A HiPerFREDTM Epitaxial Diode IFAV = 8 A VRRM = 200 V trr = 25 ns with soft recovery Preliminary Data VRSM VRRM V V 200 200 Type C A TO-220 AC C DSEP 8-02A A C (TAB) D4 Test Conditions IFRMS IFAVM TC = 150°C; rectangular, d = 0.5 IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine EAS TVJ = 25°C; non-repetitive IAS = 2 A; L = 180 µH IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 35 8 A A 80 A 0.5 mJ 0.2 A TC = 25°C Md mounting torque Weight typical Symbol Test Conditions RthJC RthCH W 2 fo TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 8 A; IF = 1 A; -di/dt = 50 A/µs; VR = 30 V; TVJ = 25°C IRM VR = 100 V; IF = 10 A; -diF/dt = 100 A/µs TVJ = 100°C g 50 0.2 µA mA 0.94 1.30 V V 2.5 0.5 K/W K/W 25 ns TVJ = 150°C TVJ = 25°C trr Nm Characteristic Values typ. max. t VF ② 60 0.4...0.6 No ① °C °C °C r Ptot -55...+175 175 -55...+150 ne TVJ TVJM Tstg IR Maximum Ratings w Symbol de si gn A = Anode, C = Cathode, TAB = Cathode Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µs, Duty Cycle < 2.0 % 4.1 A Features • • • • • • • International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Applications • Antiparallel diode for high frequency switching devices • Antisaturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages • Avalanche voltage rated for reliable operation • Soft reverse recovery for low EMI/RFI • Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see Outlines.pdf Recommended replacement: DPG10I200PA IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 008 Data according to IEC 60747 and per diode unless otherwise specified 20080317a 1-1