DSEP8-03A

DSEP 8-03A HiPerFREDTM Epitaxial Diode IFAV = 10 A VRRM = 300 V trr = 30 ns with soft recovery VRSM VRRM V V 300 300 Type C A TO-220 AC C DSEP 8-03A A C (TAB) D4 Conditions Maximum Ratings IFRMS IFAVM TC = 130°C; rectangular, d = 0.5 IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine EAS TVJ = 25°C; non-repetitive IAS = 2 A; L = 180 µH IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive A A 60 A 0.5 mJ 0.2 A TC = 25°C Md mounting torque Weight typical Symbol Conditions RthJC RthCH W 2 fo Nm g Characteristic Values typ. max. TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM 60 0.25 µA mA IF = 10 A; 1.29 1.75 V V 2.5 0.5 K/W K/W 30 ns t VF ② 60 0.4...0.6 TVJ = 150°C TVJ = 25°C No ① °C °C °C r Ptot -55...+175 175 -55...+150 ne TVJ TVJM Tstg IR 35 10 w Symbol de si gn A = Anode, C = Cathode, TAB = Cathode trr IF = 1 A; -di/dt = 50 A/µs; VR = 30 V; TVJ = 25°C IRM VR = 100 V; IF = 12 A; -diF/dt = 100 A/µs TVJ = 100°C Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µs, Duty Cycle < 2.0 % 2.4 A Features • • • • • • • International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Applications • Antiparallel diode for high frequency switching devices • Antisaturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages • Avalanche voltage rated for reliable operation • Soft reverse recovery for low EMI/RFI • Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see Outlines.pdf Recommended replacement: DPG10I300PA IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 025 Data according to IEC 60747 and per diode unless otherwise specified 20080317a 1-2 DSEP 8-03A 30 15 400 nC A IF TVJ =150°C TVJ = 100°C VR = 150V VR = 150V A IRM 300 TVJ =100°C 20 TVJ = 100°C Qr IF = 20A IF = 10A IF = 5A 10 TVJ = 25°C IF = 20A IF = 10A IF = 5A 200 10 5 100 0 0.0 0.5 1.0 1.5 0 100 2.0 V 0 A/µs 1000 -diF/dt Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 1.4 70 40 80 120 °C 160 TVJ Fig. 4 Dynamic parameters Qr, IRM versus TVJ 1 ZthJC 400 800 1000 A/µs 0.6 tfr 8 0.4 4 0.2 0 200 400 -diF/dt Fig. 5 Recovery time trr versus -diF/dt µs VFR 0 600 0.0 600 A/µs 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i No K/W 200 t 10 0 fo 40 r 30 0 0.8 IF = 10A 12 VFR ne Qr Fig. 3 Peak reverse current IRM versus -diF/dt tfr w 50 0.6 600 A/µs 800 1000 -diF/dt V IF = 20A IF = 10A IF = 5A IRM 0.8 400 TVJ = 100°C VR = 150V trr 60 1.0 200 16 TVJ = 100°C ns 1.2 Kf 0 de si gn VF 1 2 3 Rthi (K/W) ti (s) 1.449 0.558 0.493 0.005 0.0003 0.017 0.1 0.01 0.001 0.00001 DSEP 8-03A 0.0001 0.001 0.01 s 0.1 1 t NOTE: Fig. 2 to Fig. 6 shows typical values 2-2 025 Fig. 7 Transient thermal resistance junction to case © 2000 IXYS All rights reserved