DSEP8-06A

DSEP8-06A HiPerFRED VRRM = 600 V I FAV = 10 A t rr = 30 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP8-06A Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220610b DSEP8-06A Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop min. typ. max. Unit 600 V 600 V VR = 600 V TVJ = 25°C 60 µA VR = 600 V TVJ = 150°C 0,25 mA TVJ = 25°C 2,10 V 2,32 V 1,42 V IF = 10 A IF = 20 A IF = 10 A IF = 20 A TVJ = 150 °C TC = 135°C 1,68 V T VJ = 175°C 10 A TVJ = 175°C 1,03 V 25 mΩ I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C 6 pF I RM max. reverse recovery current TVJ = 25 °C 3,5 A t rr reverse recovery time rectangular for power loss calculation only 2,5 K/W IXYS reserves the right to change limits, conditions and dimensions. K/W 0,5 TC = 25°C IF = © 2022 IXYS all rights reserved d = 0.5 10 A; VR = 300 V -di F /dt = 200 A/µs 60 50 W A TVJ = 100°C 6 A TVJ = 25 °C 30 ns TVJ = 100°C 90 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20220610b DSEP8-06A Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 °C -55 150 °C 150 °C 2 Weight MD mounting torque FC mounting force with clip g 0,4 0,6 Nm 20 60 N Product Marking Part Number Logo Date Code Lot # XXXXXX yywwZ 123456 Location Ordering Standard Ordering Number DSEP8-06A Similar Part DSEP8-06B Equivalent Circuits for Simulation I V0 R0 Package TO-220AC (2) * on die level Delivery Mode Tube Quantity 50 Code No. 474711 Voltage class 600 T VJ = 175 °C Fast Diode V 0 max threshold voltage 1,03 R0 max slope resistance * 22 IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Marking on Product DSEP8-06A V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20220610b DSEP8-06A Outlines TO-220 A = supplier option H1 ØP D 4 3 L1 1 L 2x b2 2x b C e A2 3 IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 5.08 5.85 10.66 BSC 6.85 0.390 0.200 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 ØP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A1 Q E Dim. 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20220610b DSEP8-06A Fast Diode 30 1.4 40 1.2 25 TVJ = 150°C TVJ = 25°C IF VR = 300 V VR = 300 V 30 1.0 TVJ = 100°C 20 TVJ = 100°C TVJ = 100°C 0.8 Qr 15 [A] 0.6 20 [A] [μC] 10 0.4 5 10 0.2 0 0.0 0.5 1.0 1.5 2.0 0.0 100 2.5 0 1000 VF [ V ] 0 200 -diF /dt [A/μs] 2.0 120 600 800 1000 Fig. 3 Typ. peak reverse current IRM versus -diF /dt 20 TVJ = 100°C 1.2 TVJ = 100°C VR = 300 V 110 400 -diF /dt [A/μs] Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt Fig. 1 Forward current IF versus VF IF = 10 A 1.5 15 IF = 20 A IF = 10 A IF = 5 A 100 trr Kf 1.0 tfr 10 90 IRM 0.9 VFR 0.6 [V] [ns] 0.5 IF = 20 A IF = 10 A IF = 5 A IRM IF = 20 A IF = 10 A IF = 5 A 80 [μs] 5 0.3 trr VFR 70 Qr 0.0 0 0 40 80 120 160 0 TVJ [°C] 200 400 600 800 1000 0 -diF /dt [A/μs] Fig. 4 Dynamic parameters Qr, IRM versus TVJ 200 400 600 800 0.0 1000 -diF /dt [A/μs] Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt 10 Constants for ZthJC calculation: 1 i 1 2 3 ZthJC 0.1 Rthi [K/W] 1.449 0.5578 0.4931 ti [s] 0.0052 0.0003 0.0169 [K/W] 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220610b