DSEP8-12A

DSEP8-12A HiPerFRED VRRM = 1200 V I FAV = 8A t rr = 40 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP8-12A Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220610c DSEP8-12A Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop min. typ. max. Unit 1200 V 1200 V VR = 1200 V TVJ = 25°C 60 µA VR = 1200 V TVJ = 150°C 0,25 mA TVJ = 25°C 2,94 V 3,57 V 1,96 V IF = 10 A IF = 20 A IF = 10 A IF = 20 A TVJ = 150 °C TC = 135°C 2,56 V T VJ = 175°C 8 A TVJ = 175°C 1,20 V 57 mΩ I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = 600 V f = 1 MHz TVJ = 25°C 3 pF I RM max. reverse recovery current TVJ = 25 °C 4 A t rr reverse recovery time rectangular for power loss calculation only 2,5 K/W IXYS reserves the right to change limits, conditions and dimensions. K/W 0,5 TC = 25°C IF = © 2022 IXYS all rights reserved d = 0.5 10 A; VR = 600 V -di F /dt = 200 A/µs 60 40 W A TVJ = 100°C 8 A TVJ = 25 °C 40 ns TVJ = 100°C 115 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20220610c DSEP8-12A Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 °C -55 150 °C 150 °C 2 Weight MD mounting torque FC mounting force with clip g 0,4 0,6 Nm 20 60 N Product Marking Part Number Logo Date Code Lot # XXXXXX yywwZ 123456 Location Ordering Standard Ordering Number DSEP8-12A Equivalent Circuits for Simulation I V0 R0 Marking on Product DSEP8-12A * on die level Delivery Mode Tube Code No. 475912 T VJ = 175 °C Fast Diode V 0 max threshold voltage 1,2 V R0 max slope resistance * 54 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20220610c DSEP8-12A Outlines TO-220 A = supplier option H1 ØP D 4 3 L1 1 L 2x b2 2x b C e A2 3 IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 5.08 5.85 10.66 BSC 6.85 0.390 0.200 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 ØP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A1 Q E Dim. 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20220610c DSEP8-12A Fast Diode 30 2000 40 25 IF TVJ = 100°C VR = 600 V VR = 600 V 1500 TVJ = 25°C 100°C 150°C 20 TVJ = 100°C 30 IF = 10 A IF = 5 A 20 IF = 5 A [µC] [A] IRM IF = 10 A 1000 15 IF = 20 A IF = 20 A Qr [A] 10 500 10 5 0 0 1 2 3 0 100 4 0 1000 0 200 -diF /dt [A/µs] VF [V] 2.0 150 TVJ = 100°C VR = 600 V IF = 10 A VR = 600 V 130 80 trr IF = 10 A [ns] Qr 100 0.8 VFR [V] IF = 20 A 120 110 1000 1.2 TVJ = 100°C 1.5 IRM 800 120 140 Kf 1.0 600 Fig. 3 Typ. peak reverse current IRM versus -diF /dt Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt Fig. 1 Forward current IF versus VF 400 -diF /dt [A/µs] IF = 5 A tfr [µs] 40 0.4 0.5 tfr VFR 0.0 90 0 40 80 120 160 0 0 200 TVJ [°C] 400 600 800 1000 0 200 -diF /dt [A/µs] Fig. 4 Typ. dynamic parameters Qr, IRM versus TVJ 400 600 800 0.0 1000 -diF /dt [A/µs] Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt 10 1 Constants for ZthJC calculation: ZthJC 0.1 i Rthi (K/W) [K/W] 1 0.0200 0.0002 2 0.3000 0.0040 3 0.8000 0.0200 4 1.3800 0.0100 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 ti (s) 1 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220610c