DSI2X55-12A

DSI2x55-12A Standard Rectifier VRRM = 1200 V I FAV = 2x VF = 60 A 1.22 V Parallel legs Part number DSI2x55-12A Backside: isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For single and three phase bridge configurations ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191129d DSI2x55-12A Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1200 IR reverse current VR = 1200 V TVJ = 25°C 100 µA VR = 1200 V TVJ = 150°C 1.5 mA IF = TVJ = 25°C 1.26 V 1.54 V 1.22 V VF forward voltage drop 60 A min. typ. I F = 120 A IF = TVJ = 125 °C 60 A I F = 120 A I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 95 °C rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved V 1.58 V T VJ = 150 °C 60 A TVJ = 150 °C 0.83 V 6.2 mΩ d = 0.5 for power loss calculation only Ptot max. Unit 1300 V 0.6 K/W K/W 0.1 TC = 25°C 210 W t = 10 ms; (50 Hz), sine TVJ = 45°C 800 A t = 8,3 ms; (60 Hz), sine VR = 0 V 865 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 680 A t = 8,3 ms; (60 Hz), sine VR = 0 V 735 A t = 10 ms; (50 Hz), sine TVJ = 45°C 3.20 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 3.12 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 2.31 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 2.25 kA²s 25 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20191129d DSI2x55-12A Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 150 Unit A -40 150 °C -40 125 °C 150 °C 30 Weight g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL terminal to terminal 10.5 terminal to backside 8.6 t = 1 second isolation voltage t = 1 minute 50/60 Hz, RMS; IISOL ≤ 1 mA 3.2 mm 6.8 mm 3000 V 2500 V Product Marking Logo XXXXX ® yywwZ 1234 Date Code Location Ordering Standard Part Number UL Lot# Ordering Number DSI2x55-12A Similar Part DSI2x55-16A Equivalent Circuits for Simulation I V0 R0 Marking on Product DSI2x55-12A Package SOT-227B (minibloc) * on die level Delivery Mode Tube Code No. 477052 Voltage class 1600 T VJ = 150°C Rectifier V 0 max threshold voltage 0.83 V R0 max slope resistance * 4.3 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20191129d DSI2x55-12A Outlines SOT-227B (minibloc) 2 1 3 4 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191129d DSI2x55-12A Rectifier 120 700 100 104 50 Hz, 80% VRRM 600 80 TVJ = 45°C TVJ = 45°C IFSM 500 IF I2 t [A] [A] 400 TVJ = 150°C 103 60 40 VR = 0 V [A2s] TVJ = 150°C TVJ = 125°C 150°C 20 300 TVJ = 25°C 0 0.4 0.8 1.2 102 200 0.001 1.6 0.01 0.1 1 1 2 3 4 5 6 7 8 910 VF [V] t [s] t [ms] Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current Fig. 3 I2t versus time per diode RthHA : 0.2 K/W 0.4 K/W 0.6 K/W 0.8 K/W 1.0 K/W 2.0 K/W dc = 1 0.5 0.4 0.33 0.17 0.08 60 Ptot 40 160 dc = 1 0.5 0.4 0.33 0.17 0.08 120 IF(AV)M 80 [W] [A] 20 40 0 0 0 10 20 30 40 50 0 IF(AV)M [A] 25 50 75 100 125 150 175 0 25 50 75 100 125 150 TC [°C] Tamb [°C] Fig. 4 Power dissipation vs. direct output current & ambient temperature Fig. 5 Max. forward current versus case temperature 0.8 0.6 ZthJC Constants for ZthJC calculation: 0.4 [K/W] 0.2 0.0 1 10 100 1000 i Rthi (K/W) ti (s) 1 0.0240 0.01000 2 0.0160 0.00001 3 0.0500 0.00500 4 0.1800 0.02300 5 0.3300 0.22000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191129d