DSI45-12A

DSI45-12A Standard Rectifier VRRM = 1200 V I FAV = 45 A VF = 1.23 V Single Diode Part number DSI45-12A Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For single and three phase bridge configurations ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191129e DSI45-12A Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 1300 V 1200 V VR = 1200 V TVJ = 25°C 40 µA VR = 1200 V TVJ = 150°C 1.5 mA TVJ = 25°C 1.26 V 1.57 V 1.23 V IF = 45 A IF = 90 A IF = 45 A IF = 90 A TVJ = 150 °C TC = 130 °C 1.66 V T VJ = 175 °C 45 A TVJ = 175 °C 0.81 V 9.1 mΩ 180° sine for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 0.55 K/W K/W 0.3 TC = 25°C 270 W t = 10 ms; (50 Hz), sine TVJ = 45°C 480 A t = 8,3 ms; (60 Hz), sine VR = 0 V 520 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 410 A t = 8,3 ms; (60 Hz), sine VR = 0 V 440 A t = 10 ms; (50 Hz), sine TVJ = 45°C 1.15 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 1.13 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 840 A²s 805 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 18 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20191129e DSI45-12A Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 70 Unit A -40 175 °C -40 150 °C 150 °C 6 Weight MD mounting torque FC mounting force with clip g 0.8 1.2 Nm 20 120 N Product Marking IXYS Logo XXXXXXXXX Part Number Date Code yywwZ 1234 Lot# Location Ordering Standard Ordering Number DSI45-12A Similar Part DSI45-16A DSI45-16AR DSI45-08A Equivalent Circuits for Simulation I V0 R0 Marking on Product DSI45-12A Package TO-247AD (2) ISOPLUS247 (2) TO-247AD (2) * on die level Delivery Mode Tube Code No. 471895 Voltage class 1600 1600 800 T VJ = 175°C Rectifier V 0 max threshold voltage 0.81 V R0 max slope resistance * 6.5 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20191129e DSI45-12A Outlines TO-247 A E A2 D2 Ø P1 ØP S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 2x b e C A1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.430 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 10.92 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20191129e DSI45-12A Rectifier 400 80 1200 VR = 0 V 50 Hz, 80% VRRM 70 1000 360 60 50 IF 600 [A2s] 280 30 TVJ = 45°C I2 t IFSM 40 [A] 800 TVJ = 45°C 320 TVJ = 150°C 400 [A] 20 240 TVJ = 150°C 125°C 25°C 10 0 0.5 1.0 200 0.001 1.5 200 TVJ = 150°C 0 0.01 VF [V] 0.1 1 1 2 t [s] Fig. 1 Forward current versus voltage drop per diode 3 4 5 6 7 8 910 t [ms] 2 Fig. 2 Surge overload current Fig. 3 I t versus time per diode 80 80 RthJA: 0.6 KW 0.8 KW 1 KW 2 KW 4 KW 8 KW DC = 1 0.5 0.4 0.33 0.17 0.08 60 Ptot 40 60 IdAVM 40 DC = 1 0.5 0.4 0.33 0.17 0.08 [A] [W] 20 20 0 0 0 10 20 30 40 50 0 IdAVM [A] 50 100 150 200 0 50 Tamb [°C] 100 150 200 TC [°C] Fig. 4 Power dissipation vs. direct output current & ambient temperature Fig. 5 Max. forward current vs. case temperature 0.6 0.5 0.4 Zth 0.3 [K/W] i 0.2 1 2 0.1 3 4 0.0 1 10 100 1000 Ri 0.033 0.095 0.164 0.258 ti 0.0006 0.0039 0.033 0.272 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191129e