DSI45-16AR

DSI45-16AR Standard Rectifier VRRM = 1600 V I FAV = 45 A VF = 1.23 V Single Diode Part number DSI45-16AR Backside: isolated 3 1 Features / Advantages: Applications: Package: ISOPLUS247 ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For single and three phase bridge configurations ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Backside: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191129b DSI45-16AR Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 1700 V 1600 V VR = 1600 V TVJ = 25°C 40 µA VR = 1600 V TVJ = 150°C 1.5 mA TVJ = 25°C 1.26 V 1.57 V 1.23 V IF = 45 A IF = 90 A IF = 45 A IF = 90 A TVJ = 150 °C TC = 100 °C 1.66 V T VJ = 175 °C 45 A TVJ = 175 °C 0.81 V 9.1 mΩ sine 180° for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 0.9 K/W K/W 0.3 TC = 25°C 165 W t = 10 ms; (50 Hz), sine TVJ = 45°C 480 A t = 8,3 ms; (60 Hz), sine VR = 0 V 520 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 410 A t = 8,3 ms; (60 Hz), sine VR = 0 V 440 A t = 10 ms; (50 Hz), sine TVJ = 45°C 1.15 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 1.13 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 840 A²s 805 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 18 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20191129b DSI45-16AR Package Ratings ISOPLUS247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 70 Unit A -40 175 °C -40 150 °C 150 °C 6 Weight FC 20 mounting force with clip d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL t = 1 minute 120 N terminal to terminal 5.4 mm terminal to backside 4.1 mm 3600 V 3000 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL ≤ 1 mA Product Marking IXYS Logo ISOPLUS® XXXXXXXXX yywwZ Part Number Date Code 1234 Lot# Location Ordering Standard Ordering Number DSI45-16AR Similar Part DSI45-16A DSI45-12A DSI45-08A Equivalent Circuits for Simulation I V0 R0 Marking on Product DSI45-16AR Package TO-247AD (2) TO-247AD (2) TO-247AD (2) * on die level Delivery Mode Tube Code No. 480428 Voltage class 1600 1200 800 T VJ = 175°C Rectifier V 0 max threshold voltage 0.81 V R0 max slope resistance * 6.5 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20191129b DSI45-16AR Outlines ISOPLUS247 A2 E1 E D2 A Q Dim. D D3 D1 R A A1 A2 b b2 b4 c D D1 D2 D3 E E1 e L L1 Q R W 2 3 b4 L L1 1 2x b2 c 2x b Die Gehäuseabmessungen entsprechen dem Typ TO-247 AD gemäß JEDEC außer Schraubloch und Lmax. This drawing will meet all dimensions requiarement of JEDEC outline TO-247 AD except screw hole and except Lmax. W 3 © 2019 IXYS all rights reserved Inches min max 0.190 0.205 0.090 0.100 0.075 0.085 0.045 0.055 0.075 0.087 0.115 0.128 0.024 0.033 0.819 0.840 0.620 0.640 0.065 0.085 0.799 0.815 0.620 0.635 0.520 0.540 0.429 BSC 0.780 0.811 0.150 0.172 0.220 0.244 0.167 0.217 0.004 Die konvexe Form des Substrates ist typ. < 0.04 mm über der Kunststoffoberfläche der Bauteilunterseite The convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side e A1 IXYS reserves the right to change limits, conditions and dimensions. Millimeter min max 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.20 2.92 3.24 0.61 0.83 20.80 21.34 15.75 16.26 1.65 2.15 20.30 20.70 15.75 16.13 13.21 13.72 10.90 BSC 19.81 20.60 3.81 4.38 5.59 6.20 4.25 5.50 0.10 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20191129b DSI45-16AR Rectifier 400 80 1200 VR = 0 V 50 Hz, 80% VRRM 70 1000 360 60 50 IF 600 [A2s] 280 30 TVJ = 45°C I2 t IFSM 40 [A] 800 TVJ = 45°C 320 [A] TVJ = 150°C 400 20 240 TVJ = 150°C 125°C 25°C 10 0 0.5 1.0 200 0.001 1.5 200 TVJ = 150°C 0 0.01 VF [V] 0.1 1 1 2 t [s] 4 5 6 7 8 910 2 Fig. 2 Surge overload current Fig. 1 Forward current versus voltage drop per diode 3 t [ms] Fig. 3 I t versus time per diode 80 80 RthJA: 0.6 KW 0.8 KW 1 KW 2 KW 4 KW 8 KW DC = 1 0.5 0.4 0.33 0.17 0.08 60 Ptot 40 [W] DC = 1 0.5 0.4 0.33 0.17 0.08 60 IdAVM 40 [A] 20 20 0 0 0 10 20 30 40 50 60 0 IdAVM [A] 50 100 150 200 0 50 Tamb [°C] 100 150 200 TC [°C] Fig. 4 Power dissipation vs. direct output current & ambient temperature Fig. 5 Max. forward current vs. case temperature 1.0 0.8 Zth 0.6 i 1 2 3 4 5 [K/W] 0.4 0.2 0.0 1 10 100 1000 Ri 0.0607 0.123 0.2305 0.323 0.1628 ti 0.0004 0.00256 0.045 0.0242 0.18 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191129b