DSS10-0045B

DSS10-0045B Schottky Diode VRRM = 45 V I FAV = 10 A VF = 0.46 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSS10-0045B Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20211013a DSS10-0045B Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 45 V IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. VR = 45 V TVJ = 25°C 10 mA 45 V TVJ = 100°C 50 mA TVJ = 25°C 0.51 V 0.67 V 0.46 V IF = 10 A IF = 20 A IF = 10 A IF = 20 A TVJ = 125 °C TC = 135 °C 0.64 V T VJ = 150 °C 10 A TVJ = 150 °C 0.27 V 17.3 mΩ d = 0.5 for power loss calculation only 1.7 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C EAS non-repetitive avalanche energy I AS = I AR repetitive avalanche current VA = 1.5·V R typ. f = 10 kHz © 2021 IXYS all rights reserved max. Unit 45 V VR = rectangular IXYS reserves the right to change limits, conditions and dimensions. typ. K/W 0.5 TC = 25°C 5 V f = 1 MHz 20 A L = 100 µH 75 160 497 TVJ = 25 °C Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 20 mJ 2 A 20211013a DSS10-0045B Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 150 °C -55 125 °C 150 °C 2 Weight MD mounting torque FC mounting force with clip g 0.4 0.6 Nm 20 60 N Product Marking Part Number Logo Date Code Lot # XXXXXX yywwZ 123456 Location Ordering Standard Ordering Number DSS10-0045B Equivalent Circuits for Simulation I V0 R0 * on die level Delivery Mode Tube Quantity 50 Code No. 475513 T VJ = 150°C Schottky V 0 max threshold voltage 0.27 R0 max slope resistance * 14 IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Marking on Product DSS10-0045B V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20211013a DSS10-0045B Outlines TO-220 A = supplier option H1 ØP D 4 3 L1 1 L 2x b2 2x b C e A2 3 IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 5.08 5.85 10.66 BSC 6.85 0.390 0.200 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 ØP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A1 Q E Dim. 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20211013a DSS10-0045B Schottky 1000 30 1000 TVJ=150°C 100 125°C 10 IR 10 IF 75°C [mA] 1 [A] 0.1 25°C 100 0.01 0.2 0.4 0.6 0.8 1.0 0 10 20 VF [V] 40 30 30 50 0 10 20 30 40 VR [V] Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR P(AV) DC d = 0.5 20 [A] d= DC 0.5 0.33 0.25 0.17 0.08 [W] 10 10 0 0 0 40 80 120 160 0 10 20 30 IF(AV) [A] TC [°C] Fig. 5 Forward power loss characteristics Fig. 4 Average forward current IF(AV) vs. case temp. TC 1 40 Fig. 2 Typ. reverse current IR vs. reverse voltage VR 40 20 30 VR [V] Fig. 1 Max, forward voltage drop characteristics IF(AV) TVJ = 25°C [pF] 50°C TVJ = 150°C 125°C 25°C 1 0.0 CT 100°C D=0.5 0.33 0.25 0.17 ZthJC 0.08 0.1 Single Pulse [K/W] 0.01 0.0001 Note: All curves are per diode 0.001 0.01 0.1 1 10 t [s] Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20211013a