DSS17-06CR

DSS17-06CR Schottky Diode VRRM = 600 V I FAV = 17 A VF = 2.54 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSS17-06CR Backside: isolated 3 1 Features / Advantages: Applications: Package: ISOPLUS247 ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Backside: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200210d DSS17-06CR Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 600 IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. V VR = 600 V TVJ = 25°C 500 µA TVJ = 125°C 5 mA IF = 15 A TVJ = 25°C 3.17 V IF = 30 A 3.46 V IF = 15 A 2.54 V IF = 30 A TVJ = 125 °C TC = 95 °C 2.90 V T VJ = 175 °C 17 A TVJ = 175 °C 1.91 V 21.5 mΩ d = 0.5 for power loss calculation only 1.4 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C © 2020 IXYS all rights reserved max. Unit 600 V VR = 600 V rectangular IXYS reserves the right to change limits, conditions and dimensions. typ. K/W 0.3 TC = 25°C 105 200 20 Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 20200210d DSS17-06CR Package Ratings ISOPLUS247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 50 Unit A -55 175 °C -55 150 °C 150 °C 6 Weight FC 20 mounting force with clip d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL t = 1 minute 120 N terminal to terminal 5.4 mm terminal to backside 4.1 mm 3600 V 3000 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL ≤ 1 mA Product Marking IXYS Logo ISOPLUS® XXXXXXXXX yywwZ Part Number Date Code 1234 Lot# Location Ordering Standard Ordering Number DSS17-06CR Equivalent Circuits for Simulation I V0 R0 V 0 max threshold voltage R0 max slope resistance * * on die level Delivery Mode Tube Quantity 30 Code No. 480266 T VJ = 175°C Schottky 1.91 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Marking on Product DSS17-06CR V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20200210d DSS17-06CR Outlines ISOPLUS247 A2 E1 E D2 A Q Dim. D D3 D1 R A A1 A2 b b2 b4 c D D1 D2 D3 E E1 e L L1 Q R W 2 3 b4 L L1 1 2x b2 c 2x b Die Gehäuseabmessungen entsprechen dem Typ TO-247 AD gemäß JEDEC außer Schraubloch und Lmax. This drawing will meet all dimensions requiarement of JEDEC outline TO-247 AD except screw hole and except Lmax. W 3 © 2020 IXYS all rights reserved Inches min max 0.190 0.205 0.090 0.100 0.075 0.085 0.045 0.055 0.075 0.087 0.115 0.128 0.024 0.033 0.819 0.840 0.620 0.640 0.065 0.085 0.799 0.815 0.620 0.635 0.520 0.540 0.429 BSC 0.780 0.811 0.150 0.172 0.220 0.244 0.167 0.217 0.004 Die konvexe Form des Substrates ist typ. < 0.04 mm über der Kunststoffoberfläche der Bauteilunterseite The convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side e A1 IXYS reserves the right to change limits, conditions and dimensions. Millimeter min max 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.20 2.92 3.24 0.61 0.83 20.80 21.34 15.75 16.26 1.65 2.15 20.30 20.70 15.75 16.13 13.21 13.72 10.90 BSC 19.81 20.60 3.81 4.38 5.59 6.20 4.25 5.50 0.10 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20200210d DSS17-06CR Schottky 10 50 300 TVJ=175°C 1 150°C IR TVJ= 25°C 100 125°C IF 10 0.1 [mA] TVJ = 175°C 150°C 125°C 25°C [A] CT 100°C 0.01 75°C [pF] 50°C 0.001 25°C 1 0.0001 0 1 2 3 4 5 10 0 200 VF [V] 400 600 Fig. 2 Typ. reverse current IR vs. reverse voltage VR 30 70 25 60 200 400 600 VR [V] VR [V] Fig. 1 Max. forward voltage drop characteristics 0 Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 50 20 d= DC 0.5 0.33 0.25 0.17 0.08 DC IF(AV) P(AV) 40 d = 0.5 15 [A] [W] 10 30 20 5 10 0 0 0 40 80 120 160 0 TC [°C] 5 10 15 20 25 IF(AV) [A] Fig. 4 Average forward current IF(AV) vs. case temp. TC Fig. 5 Forward power loss characteristics 2 1 D = 0.5 0.33 0.25 ZthJC 0.17 0.08 0.1 [K/W] Single Pulse 0.01 0.0001 Note: All curves are per diode 0.001 0.01 0.1 1 10 t [s] Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200210d