DSS20-01AC

DSS20-01AC preliminary Schottky Diode VRRM = 100 V I FAV = 20 A VF = 0.8 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSS20-01AC Backside: isolated 3 1 Features / Advantages: Applications: Package: ISOPLUS220 ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Backside: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20210206b DSS20-01AC preliminary Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 100 IR reverse current, drain current VR = 100 V TVJ = 25°C 300 µA VR = 100 V TVJ = 125°C 2.5 mA IF = 20 A TVJ = 25°C 0.98 V IF = 40 A 1.18 V IF = 20 A 0.80 V IF = 40 A VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. TVJ = 125 °C TC = 140 °C rectangular V 1.04 V T VJ = 175 °C 20 A TVJ = 175 °C 0.47 V 12.3 mΩ 1.7 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C EAS non-repetitive avalanche energy I AS = I AR repetitive avalanche current VA = 1.5·V R typ. f = 10 kHz © 2021 IXYS all rights reserved max. Unit 100 V d = 0.5 for power loss calculation only IXYS reserves the right to change limits, conditions and dimensions. typ. K/W 0.5 TC = 25°C 12 V f = 1 MHz 5A L = 100 µH 90 120 146 TVJ = 25 °C Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 1.25 mJ 0.5 A 20210206b DSS20-01AC preliminary Package Ratings ISOPLUS220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 °C -55 150 °C 150 °C 2 Weight FC 20 mounting force with clip d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL t = 1 minute 60 N terminal to terminal 1.0 mm terminal to backside 3.0 mm 3600 V 3000 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL ≤ 1 mA Product Marking UL Logo IXYS ® ISOPLUS® Part Number Date Code Location Lot# XXXXXXXXX yywwZ 1234 Ordering Standard Ordering Number DSS20-01AC Similar Part DSS10-01A DSS10-01AS DSA10I100PM Equivalent Circuits for Simulation I V0 R0 Package TO-220AC (2) TO-263AB (D2Pak) (2) TO-220ACFP (2) * on die level Delivery Mode Tube Quantity 50 Code No. 503346 Voltage class 100 100 100 T VJ = 175°C Schottky V 0 max threshold voltage 0.47 R0 max slope resistance * 9 IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Marking on Product DSS20-01AC V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20210206b DSS20-01AC preliminary E A A2 E1 D2 Outlines ISOPLUS220 Dim. T D1 D3 D 2 3 2x b2 L1 1 A A1 A2 b b2 b4 c D D1 D2 D3 E E1 e L L1 T° W L b4 2x b Inches min max 0.157 0.197 0.098 0.118 0.063 0.071 0.035 0.051 0.049 0.065 0.093 0.100 0.028 0.039 0.591 0.630 0.472 0.512 0.043 0.059 0.587 0.610 0.394 0.433 0.295 0.335 0.200 BSC 0.512 0.571 0.118 0.138 - 0.004 Die konvexe Form des Substrates ist typ. < 0.04 mm über der Kunststoffoberfläche der Bauteilunterseite The convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side c e Millimeters min max 4.00 5.00 2.50 3.00 1.60 1.80 0.90 1.30 1.25 1.65 2.35 2.55 0.70 1.00 15.00 16.00 12.00 13.00 1.10 1.50 14.90 15.50 10.00 11.00 7.50 8.50 5.08 BSC 13.00 14.50 3.00 3.50 42.5 47.5 0.10 A1 Die Gehäuseabmessungen entsprechen dem Typ TO-273 gemäß JEDEC außer D und D1. This drawing will meet all dimensions requiarement of JEDEC outline TO-273 except D and D1. W 3 IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20210206b