DSS2x101-015A
Schottky Diode
VRRM
=
150 V
I FAV
= 2x 100 A
VF
=
0.77 V
High Performance Schottky Diode
Low Loss and Soft Recovery
Parallel legs
Part number
DSS2x101-015A
Backside: isolated
2
1
3
4
Features / Advantages:
Applications:
Package: SOT-227B (minibloc)
● Very low Vf
● Extremely low switching losses
● Low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
● Isolation Voltage: 3000 V~
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20200210b
DSS2x101-015A
Ratings
Schottky
Conditions
Symbol
VRSM
Definition
max. non-repetitive reverse blocking voltage
TVJ = 25°C
VRRM
max. repetitive reverse blocking voltage
TVJ = 25°C
IR
reverse current, drain current
VF
forward voltage drop
min.
typ.
TVJ = 25°C
4
mA
TVJ = 125°C
10
mA
I F = 100 A
TVJ = 25°C
0.91
V
1.09
V
0.77
V
TVJ = 125 °C
I F = 200 A
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
TC = 110 °C
rectangular
0.99
V
T VJ = 150 °C
100
A
TVJ = 150 °C
0.53
V
2.1
mΩ
d = 0.5
for power loss calculation only
0.4 K/W
R thCH
thermal resistance case to heatsink
Ptot
total power dissipation
I FSM
max. forward surge current
t = 10 ms; (50 Hz), sine; VR = 0 V
TVJ = 45°C
CJ
junction capacitance
VR =
TVJ = 25°C
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
V
VR = 150 V
I F = 100 A
average forward current
150
VR = 150 V
I F = 200 A
I FAV
max. Unit
150
V
K/W
0.1
TC = 25°C
24 V f = 1 MHz
962
Data according to IEC 60747and per semiconductor unless otherwise specified
310
W
1.40
kA
pF
20200210b
DSS2x101-015A
Package
Ratings
SOT-227B (minibloc)
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-40
typ.
max.
150
Unit
A
-40
150
°C
-40
125
°C
150
°C
30
Weight
g
MD
mounting torque
1.1
1.5
Nm
MT
terminal torque
1.1
1.5
Nm
d Spp/App
creepage distance on surface | striking distance through air
d Spb/Apb
VISOL
terminal to terminal
10.5
terminal to backside
8.6
t = 1 second
isolation voltage
t = 1 minute
50/60 Hz, RMS; IISOL ≤ 1 mA
3.2
mm
6.8
mm
3000
V
2500
V
Product Marking
Logo
Date
Code
yywwZ
®
XXXXX
123456
Location UL
Ordering
Standard
Part
Number
Lot#
Ordering Number
DSS2x101-015A
Equivalent Circuits for Simulation
I
V0
R0
Marking on Product
DSS2x101-015A
* on die level
Delivery Mode
Tube
Code No.
478474
T VJ = 150°C
Schottky
V 0 max
threshold voltage
0.53
V
R0 max
slope resistance *
0.2
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Quantity
10
Data according to IEC 60747and per semiconductor unless otherwise specified
20200210b
DSS2x101-015A
Outlines SOT-227B (minibloc)
2
1
3
4
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20200210b
DSS2x101-015A
Schottky
200
100
10000
100
10 TVJ=150°C
IR
IF
[mA]
10
CT
125°C
1
0.1
[A]
[pF]
75°C
TVJ =
150°C
125°C
25°C
TVJ = 25°C
1000
100°C
0.01 50°C
25°C
1
0.0
0.001
0.2
0.4
0.6
0.8
1.0
100
0
40
80
120
160
VR [V]
VF [V]
40
80
120
160
VR [V]
Fig. 2 Typ. reverse current
IR vs. reverse voltage VR
Fig. 1 Max. forward voltage
drop characteristics
0
Fig. 3 Typ. junction capacitance
CT vs. reverse voltage VR
140
160
120
120
100
DC
IF(AV)
P(AV) 80
d = 0.5
[A]
d=
DC
0.5
0.33
0.25
0.17
0.08
80
[W] 60
40
40
20
0
0
0
40
80
120
0
160
50
TC [°C]
100
150
IF(AV) [A]
Fig. 4 Average forward current
IF(AV) vs. case temp. TC
Fig. 5 Forward power loss
characteristics
1
ZthJC
D=0.5
0.33
0.25
0.1
0.17
0.08
Single Pulse
[K/W]
0.01
0.001
Note: All curves are per diode
0.01
0.1
1
10
t [s]
Fig. 6 Transient thermal impedance junction to case at various duty cycles
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20200210b
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