DSS2X101-02A

DSS2x101-02A Schottky Diode VRRM = 200 V I FAV = 2x 100 A VF = 0.84 V High Performance Schottky Diode Low Loss and Soft Recovery Parallel legs Part number DSS2x101-02A Backside: isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200210b DSS2x101-02A Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop min. typ. TVJ = 25°C 4 mA TVJ = 125°C 10 mA I F = 100 A TVJ = 25°C 0.94 V 1.16 V 0.84 V TVJ = 125 °C I F = 200 A VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 105 °C rectangular 1.11 V T VJ = 150 °C 100 A TVJ = 150 °C 0.54 V 2.7 mΩ d = 0.5 for power loss calculation only 0.4 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved V VR = 200 V I F = 100 A average forward current 200 VR = 200 V I F = 200 A I FAV max. Unit 200 V K/W 0.1 TC = 25°C 24 V f = 1 MHz 787 Data according to IEC 60747and per semiconductor unless otherwise specified 310 W 1.40 kA pF 20200210b DSS2x101-02A Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 150 Unit A -40 150 °C -40 125 °C 150 °C 30 Weight g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL terminal to terminal 10.5 terminal to backside 8.6 t = 1 second isolation voltage t = 1 minute 50/60 Hz, RMS; IISOL ≤ 1 mA 3.2 mm 6.8 mm 3000 V 2500 V Product Marking Logo Date Code yywwZ ® XXXXX 123456 Location UL Ordering Standard Part Number Lot# Ordering Number DSS2x101-02A Equivalent Circuits for Simulation I V0 R0 Marking on Product DSS2x101-02A * on die level Delivery Mode Tube Code No. 500867 T VJ = 150°C Schottky V 0 max threshold voltage 0.54 V R0 max slope resistance * 0.8 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20200210b DSS2x101-02A Outlines SOT-227B (minibloc) 2 1 3 4 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200210b DSS2x101-02A Schottky 10000 10 200 100 TVJ = 150°C 1 125°C CT IR IF 0.1 [A] 10 TVJ = 25°C 100°C 1000 [mA] [pF] 75°C TVJ = 150°C 125°C 25°C 0.01 50°C 25°C 1 0.2 100 0.001 0.4 0.6 0.8 1.0 1.2 0 50 100 150 200 VR [V] VF [V] 50 100 150 200 VR [V] Fig. 2 Typ. reverse current IR vs. reverse voltage VR Fig. 1 Max. forward voltage drop characteristics 0 Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 160 160 140 120 120 IF(AV) 100 DC P(AV) d = 0.5 80 d= DC 0.5 0.33 0.25 0.17 0.08 80 [A] [W] 60 40 40 20 0 0 0 40 80 120 0 160 50 100 150 IF(AV) [A] TC [°C] Fig. 4 Average forward current IF(AV) vs. case temperature TC Fig. 5 Forward power loss characteristics 1 ZthJC D= 0.5 0.33 0.25 0.1 0.17 [K/W] 0.08 0.01 0.001 Single Pulse Note: All curves are per diode 0.01 0.1 1 10 t [s] Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200210b