DSS2X111-008A

DSS2x111-008A Schottky Diode VRRM = 80 V I FAV = 2x 110 A VF = 0.72 V High Performance Schottky Diode Low Loss and Soft Recovery Parallel legs Part number DSS2x111-008A Backside: isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20211022b DSS2x111-008A Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop min. typ. 80 V TVJ = 25°C 8 mA 80 V TVJ = 125°C 20 mA TVJ = 25°C 0.84 V 1.04 V 0.72 V TVJ = 125 °C I F = 100 A I F = 200 A VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 105 °C rectangular 0.94 V T VJ = 150 °C 110 A TVJ = 150 °C 0.49 V 2.1 mΩ d = 0.5 for power loss calculation only 0.4 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved V VR = I F = 200 A average forward current 80 VR = I F = 100 A I FAV max. Unit 80 V K/W 0.1 TC = 25°C 12 V f = 1 MHz 2.1 Data according to IEC 60747and per semiconductor unless otherwise specified 310 W 1.40 kA nF 20211022b DSS2x111-008A Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 150 Unit A -40 150 °C -40 125 °C 150 °C 30 Weight g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL terminal to terminal 10.5 terminal to backside 8.6 t = 1 second isolation voltage t = 1 minute 50/60 Hz, RMS; IISOL ≤ 1 mA 3.2 mm 6.8 mm 3000 V 2500 V Product Marking Logo Date Code yywwZ ® XXXXX 123456 Location UL Ordering Standard Part Number Lot# Ordering Number DSS2x111-008A Equivalent Circuits for Simulation I V0 R0 Marking on Product DSS2x111-008A * on die level Delivery Mode Tube Code No. 489271 T VJ = 150°C Schottky V 0 max threshold voltage 0.49 V R0 max slope resistance * 0.3 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20211022b DSS2x111-008A Outlines SOT-227B (minibloc) 2 1 3 4 IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20211022b DSS2x111-008A Schottky 200 100 10000 TVJ = 175°C 100 10 TVJ = 25°C IR 1 IF [A] CT 125°C 1000 100°C [mA] 10 150°C 0.1 [pF] 75°C TVJ = 150°C 125°C 25°C 0.01 50°C 25°C 1 0.0 0.001 0.2 0.4 0.6 0.8 1.0 100 0 20 40 60 80 VR [V] VF [V] Fig. 1 Max. forward voltage drop characteristics 20 40 60 80 VR [V] Fig. 2 Typ. reverse current IR vs. reverse voltage VR 160 0 Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 120 100 DC 120 d = 0.5 80 IF(AV) P(AV) 80 [A] [W] d= DC 0.5 0.33 0.25 0.17 0.08 60 40 40 20 0 0 0 40 80 120 160 0 40 80 120 160 IF(AV) [A] TC [°C] Fig. 5 Forward power loss characteristics Fig. 4 Average forward current IF(AV) vs. case temp.TC 1 ZthJC 0.1 D = 0.5 0.33 0.25 0.17 0.08 [K/W] Single Pulse 0.01 0.001 Note: All curves are per diode 0.01 0.1 1 10 t [s] Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20211022b