DSSK28-0045A

DSSK 28-0045A IFAV = 2x15 A VRRM = 45 V VF = 0.55 V Power Schottky Rectifier with common cathode VRSM VRRM V V 45 45 A Type C A TO-220 AB A C A DSSK 28-0045A C (TAB) Symbol Conditions IFRMS IFAV IFAV TC = 160°C; rectangular, d = 0.5 TC = 160°C; rectangular, d = 0.5; per device IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine EAS IAR Maximum Ratings A A A 280 A IAS = 15 A; L = 180 µH; TVJ = 25°C; non repetitive 32 mJ VA =1.5·VRRM typ.; f=10 kHz; repetitive 1.5 A 1000 V/µs -55...+175 175 -55...+150 °C °C °C 105 W 0.4...0.6 Nm 2 g ne r TVJ TVJM Tstg TC = 25°C Md mounting torque Weight typical Symbol Conditions No t fo Ptot VF w 35 15 30 (dv/dt)cr IR de si gn A = Anode, C = Cathode , TAB = Cathode Characteristic Values typ. max. VR = VRRM; TVJ = 25°C VR = VRRM; TVJ = 125°C IF = 15 A; IF = 15 A; IF = 30 A; TVJ = 125°C TVJ = 25°C TVJ = 125°C RthJC RthCH 0.5 0.5 5 mA mA 0.55 0.67 0.67 V V V 1.4 K/W K/W Features • International standard package • Very low VF • Extremely low switching losses • Low IRM-values • Epoxy meets UL 94V-0 Applications • Rectifiers in switch mode power supplies (SMPS) • Free wheeling diode in low voltage converters Advantages • High reliability circuit operation • Low voltage peaks for reduced protection circuits • Low noise switching • Low losses Dimensions see Outlines.pdf Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0% Data according to IEC 60747 and per diode unless otherwise specified. IXYS reserves the right to change limits, Conditions and dimensions. © 2006 IXYS All rights reserved 0623 Recommended replacement: DSA30C45PB/DSA60C45PB 20080317a 1-2 DSSK 28-0045A 100 10000 100 mA A pF IR IF 10 TVJ=175°C CT 150°C 1 125°C 10 TVJ = 175°C 150°C 125°C 25°C 1000 0.1 100°C 75°C 0.01 50°C 25°C 0.001 0.2 0.4 0.6 0.8 V 1.0 0 10 20 30 VF Fig. 1 Maximum forward voltage drop characteristics 25 W 20 30 IF(AV) d=0.5 DC 25 20 30 VR 40 V Fig. 3 Typ. junction capacitance CT versus reverse voltage VR IFSM d= DC 0.5 0.33 0.25 0.17 0.08 w 20 10 ne 10 10 A P(AV) 15 15 0 40 V 50 VR Fig. 2 Typ. value of reverse current IR versus reverse voltage VR 40 A 35 TVJ= 25°C 100 de si gn 1 0.0 0 r 5 5 0 40 80 120 TC 160°C 0 fo 0 10 15 20 25 30 35 A IF(AV) µs tP Fig. 5 Forward power loss characteristics 1 K/W ZthJC D=0.5 0.33 0.25 0.17 No t Fig. 4 Average forward current IF(AV) versus case temperature TC 5 0.08 0.1 Single Pulse (Thermal Resistance) 0.01 0.0001 DSSK 28-0045A 0.001 0.01 0.1 s 1 10 t IXYS reserves the right to change limits, Conditions and dimensions. © 2006 IXYS All rights reserved Note: All curves are per diode 0623 Fig. 6 Transient thermal impedance junction to case at various duty cycles 2-2