DSSK28-0045B

DSSK 28-0045B DSSK 28-0045BS IFAV = 2x15 A VRRM = 45 V VF = 0.43 V Power Schottky Rectifier with common cathode VRSM VRRM V V 45 45 45 45 A Type C A TO-220 AB (B-Type) A C A DSSK 28-0045B DSSK 28-0045BS C (TAB) TO-263 AB (BS-Type) C (TAB) A A Symbol Conditions IFRMS IFAV IFAV TC = 135°C; rectangular, d = 0.5 TC = 135°C; rectangular, d = 0.5; per device IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine EAS IAS = 15 A; L = 180 µH; TVJ = 25°C; non repetitive IAR VA =1.5·VRRM typ.; f=10 kHz; repetitive si gn A = Anode, C = Cathode , TAB = Cathode Maximum Ratings de 35 15 30 320 A 32 mJ 1.5 A 1000 V/µs -55...+150 150 -55...+150 °C °C °C 90 W 0.4...0.6 Nm 2 g ne w (dv/dt)cr r TVJ TVJM Tstg A A A TC = 25°C Md mounting torque (Version B only) Weight typical Symbol Conditions IR VR = VRRM; TVJ = 25°C VR = VRRM; TVJ = 100°C 20 100 mA mA VF IF = 15 A; IF = 15 A; IF = 30 A; 0.43 0.48 0.60 V V V 1.4 K/W K/W RthJC RthCH No t fo Ptot Characteristic Values typ. max. TVJ = 125°C TVJ = 25°C TVJ = 125°C (Version B only) 0.5 Features • • • • • International standard package Very low VF Extremely low switching losses Low IRM-values Epoxy meets UL 94V-0 Applications • Rectifiers in switch mode power supplies (SMPS) • Free wheeling diode in low voltage converters Advantages • High reliability circuit operation • Low voltage peaks for reduced protection circuits • Low noise switching • Low losses Dimensions see Outlines.pdf Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified. IXYS reserves the right to change limits, Conditions and dimensions. © 2006 IXYS All rights reserved 0623 Recommended replacement: DSB30C45PB/DSB60C45PB 20080317a 1-2 DSSK 28-0045B DSSK 28-0045BS 100 10000 1000 mA TVJ=150°C A pF 100 IR IF 125°C CT 100°C 10 10 1000 75°C 1 50°C TVJ = 150°C 125°C 25°C 1 0 0.0 0.1 25°C TVJ= 25°C 100 0.01 0.6 V 0.8 VF Fig. 1 Maximum forward voltage drop characteristics 0 20 Fig. 2 Typ. value of reverse current IR versus reverse voltage VR 25 A W P(AV) IF(AV) 20 10 10 100 fo 0 50 No t Fig. 4 Average forward current IF(AV) versus case temperature TC 10 0 150 C 200 TC 20 30 40 V 50 VR Fig. 3 Typ. junction capacitance CT versus reverse voltage VR 5 10 15 20 25 IF(AV) 30 A IFSM 1000 r 5 d= DC 0.5 0.33 0.25 0.17 0.08 ne w 15 d = 0.5 0 10 10000 20 DC 0 0 40 V 50 30 VR 40 30 10 si gn 0.4 de 0.2 A 100 10 100 1000 µs 10000 tP Fig. 5 Forward power loss characteristics K/W 1 ZthJC D = 0.5 0.33 0.25 0.17 0.08 0.1 Single Pulse DSS K28-0045B 0.001 0.01 0.1 t Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, Conditions and dimensions. © 2006 IXYS All rights reserved s 1 Note: All curves are per diode 0623 0.01 0.0001 2-2