DSSK28-0045BS-TRL

DSSK28-0045BS Schottky Diode VRRM = 45 V I FAV = 2x 15 A VF = 0.43 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSSK28-0045BS Marking on Product: DSSK28-0045BS Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-263 (D2Pak) ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190222a DSSK28-0045BS Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. 45 V VR = 45 V TVJ = 25°C 20 mA 45 V TVJ = 100°C 100 mA TVJ = 25°C 0.48 V IF = 15 A IF = 30 A IF = 15 A IF = 30 A V TVJ = 125 °C TC = 135 °C 0.43 V 0.60 V T VJ = 150 °C 15 A TVJ = 150 °C 0.24 V 11.1 mΩ d = 0.5 for power loss calculation only 1.4 K/W 0.25 R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C © 2019 IXYS all rights reserved max. Unit 45 V VR = rectangular IXYS reserves the right to change limits, conditions and dimensions. typ. TC = 25°C 5 V f = 1 MHz K/W 90 320 980 Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 20190222a DSSK28-0045BS Package Ratings TO-263 (D2Pak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 150 °C -55 125 °C 150 °C 1.5 Weight FC 20 mounting force with clip g 60 N Product Marking XXXXXXXXX Part Number IXYS yywwZ Logo Date Code Location 123456 Lot# Ordering Standard Alternative Ordering Number DSSK28-0045BS-TRL DSSK28-0045BS-TUB Similar Part DSB30C45PB DSB30C45HB DSB60C45PB DSB60C45HB Equivalent Circuits for Simulation I V0 R0 V 0 max threshold voltage R0 max slope resistance * Package TO-220AB (3) TO-247AD (3) TO-220AB (3) TO-247AD (3) * on die level Delivery Mode Tape & Reel Tube Quantity 800 50 Code No. 484296 484288 Voltage class 45 45 45 45 T VJ = 150°C Schottky 0.24 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Marking on Product DSSK28-0045BS DSSK28-0045BS V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20190222a DSSK28-0045BS Outlines TO-263 (D2Pak) Dim. W A A1 H D E Supplier Option D1 L1 c2 4 L L2 1 2 3 c 2x e 3x b2 10.92 (0.430) E1 W Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.098 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) 9.02 (0.355) mm (Inches) 2x b A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.5 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 2.54 (0.100) Recommended min. foot print 1 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 2 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20190222a DSSK28-0045BS Schottky 1000 40 2000 TVJ=150°C 100 IF 1000 IR 10 TVJ= 25°C 125°C 10 [mA] 100°C 75°C CT 50°C [pF] 1 [A] TVJ = 150°C 125°C 25°C 1 0.0 0.1 25°C 200 0.01 0.2 0.4 0.6 0.8 0 10 20 30 40 50 VR [V] VF [V] 40 10 20 30 40 50 VR [V] Fig. 2 Typ. reverse current IR vs. reverse voltage VR Fig. 1 Max. forward voltage drop characteristics 0 Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 25 20 DC 30 IF(AV) P(AV) 15 d = 0.5 d= DC 0.5 0.33 0.25 0.17 0.08 20 [A] [W] 10 10 5 0 0 0 50 100 150 200 0 5 10 15 20 25 30 35 IF(AV) [A] TC [°C] Fig. 5 Forward power loss characteristics Fig. 4 Average forward current IF(AV) vs. case temp. TC 2 1 D = 0.5 0.33 0.25 0.17 ZthJC 0.08 0.1 [K/W] Single Pulse 0.01 0.0001 Note: All curves are per diode 0.001 0.01 0.1 1 t [s] Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190222a