DSSK28-006B

DSSK 28-006B DSSK 28-006BS IFAV = 2x15 A VRRM = 60 V VF = 0.52 V Power Schottky Rectifier with common cathode VRSM VRRM V V 60 60 60 60 A Type C A TO-220 AB (B-Type) A C A DSSK 28-006B DSSK 28-006BS C (TAB) C (TAB) A A Symbol Conditions IFRMS IFAV IFAV TC = 135°C; rectangular, d = 0.5 TC = 135°C; rectangular, d = 0.5; per device IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine EAS IAS = 10 A; L = 100 µH; TVJ = 25°C; non repetitive IAR VA = 1.5·VRRM typ.; f = 10 kHz; repetitive si gn A = Anode, C = Cathode , TAB = Cathode Maximum Ratings de 35 15 30 300 A 5 mJ 1 A 1000 V/µs -55...+150 150 -55...+150 °C °C °C 90 W 0.4...0.6 Nm 2 g ne w (dv/dt)cr r TVJ TVJM Tstg A A A TC = 25°C Md mounting torque (Version B only) Weight typical Symbol Conditions IR VR = VRRM; VR = VRRM; TVJ = 25°C TVJ = 100°C 10 50 mA mA VF IF = 15 A; IF = 15 A; IF = 30 A; TVJ = 125°C TVJ = 25°C TVJ = 125°C 0.52 0.56 0.69 V V V 1.4 K/W K/W RthJC RthCH No t fo Ptot (Version B only) Characteristic Values typ. max. 0.5 Features • International standard package • Very low VF • Extremely low switching losses • Low IRM-values • Epoxy meets UL 94V-0 Applications • Rectifiers in switch mode power supplies (SMPS) • Free wheeling diode in low voltage converters Advantages • High reliability circuit operation • Low voltage peaks for reduced protection circuits • Low noise switching • Low losses Dimensions see Outlines.pdf Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0% Data according to IEC 60747 and per diode unless otherwise specified. Recommended replacement: DSB30C60PB/DSB60C60PB IXYS reserves the right to change limits, Conditions and dimensions. © 2005 IXYS All rights reserved 20080317a 1-2 DSSK 28-006B DSSK 28-006BS 100 10000 1000 TVJ=150°C mA A pF 100 IR IF 125°C CT 10 100°C 10 1000 75°C 1 50°C TVJ = 150°C 125°C 25°C 1 0.0 25°C 0.6 V 0.8 VF 0 20 30 W P(AV) IF(AV) 20 10 10 r 5 d= DC 0.5 0.33 0.25 0.17 0.08 ne w 15 d = 0.5 100 0 fo 50 150 C 200 TC No t Fig. 4 Average forward current IF(AV) versus case temperature TC 10 K/W 30 40 50 V 60 VR Fig. 3 Typ. junction capacitance CT versus reverse voltage VR 5 10 15 20 25 IF(AV) 30 A IFSM 1000 0 0 20 10000 20 DC 10 si gn A 0 0 40 50 V 60 VR Fig. 2 Typ. value of reverse current IR versus reverse voltage VR 25 30 10 de 0.4 40 ZthJC 100 0.01 0.2 Fig. 1 Maximum forward voltage drop characteristics 1 TVJ= 25°C 0.1 A 100 10 100 1000 s 10000 tP Fig. 5 Forward power loss characteristics D = 0.5 0.33 0.25 0.17 0.08 0.1 Single Pulse DSS K28-005B 0.001 0.01 0.1 t s 1 Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, Conditions and dimensions. © 2005 IXYS All rights reserved Note: All curves are per diode 0546 0.01 0.0001 2-2