DSSK28-01A

DSSK28-01A V RRM = 100 V I FAV = 2x 15 A V F = 0.64 V Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DSSK28-01A Features / Advantages: Applications: ● Very low Vf ● Extremely low switching losses ● low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters Symbol Definition Conditions VRRM max. repetitive reverse voltage IR reverse current si de µA mA IF = TVJ = 25 °C 0.82 V TVJ = 125 °C 0.64 V 0.78 V 15 A 15 A V V 30 A 15 A 30 A TC = 160°C rectangular, d = 0.5 TVJ = 175°C for power loss calculation only V mΩ 1.40 K/W 175 °C TC = 25 °C 105 W TVJ = 45°C 230 A R thJC thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current t = 10 ms (50 Hz), sine CJ junction capacitance VR = tbd V; f = 1 MHz TVJ = 25 °C EAS non-repetitive avalanche energy I AS = TVJ = 25 °C I AR repetitive avalanche current VA = 1.5·VR typ.; f = 10 kHz -55 10 A; L = 100 µH tbd pF 5 mJ 1 A No t Unit max. 5 fo r slope resistance typ. 500 ne average forward current min. TVJ = 125 °C IF = I FAV Ratings VR = 100 V IF = threshold voltage ●rIndustry standard outline ●rEpoxy meets UL 94V-0 ●rRoHS compliant 100 IF = VF0 ● Housing: TO-220 TVJ = 25 °C TVJ = 25 °C VR = 100 V forward voltage rF Package: w VF gn Backside: cathode Recommended replacement: DSA 30C100PB, DSA 60C100PB IXYS reserves the right to change limits, conditions and dimensions. © 2008 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20080612a DSSK28-01A Ratings Symbol Definition min. Conditions I RMS RMS current RthCH thermal resistance case to heatsink Tstg storage temperature per pin max. Unit 35 0.50 -55 Weight A K/W 150 °C 2 MD mounting torque FC mounting force with clip 0.4 20 g 0.8 60 Nm N IRMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. si gn 1) typ. 1) YYWW XXXXXX fo r ne Logo DateCode Assembly Code abcdef w Marking on product de Product Marking Part Name DSSK28-01A Marking on Product DSSK28-01A Delivering Mode Tube Base Qty Code Key 50 479381 No t Ordering Standard Similar Part DSSK28-01AS IXYS reserves the right to change limits, conditions and dimensions. © 2008 IXYS all rights reserved Package TO-263 (D2Pak) Voltage class 100 Data according to IEC 60747and per diode unless otherwise specified 20080612a DSSK28-01A Outlines TO-220 Millimeter Min. Max. Inches Min. Max. A B 12.70 13.97 14.73 16.00 0.500 0.550 0.580 0.630 C D 9.91 3.54 10.66 4.08 0.390 0.420 0.139 0.161 E F 5.85 2.54 6.85 3.18 0.230 0.270 0.100 0.125 G H 1.15 2.79 1.65 5.84 0.045 0.065 0.110 0.230 J K 0.64 2.54 1.01 BSC 0.025 0.040 0.100 BSC M N 4.32 1.14 4.82 1.39 0.170 0.190 0.045 0.055 0.35 2.29 0.56 2.79 0.014 0.022 0.090 0.110 B E D F N A H G J Q K R w L si C de M gn Dim. No t fo r ne Q R IXYS reserves the right to change limits, conditions and dimensions. © 2008 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20080612a DSSK28-01A 30 mA A IF 1000 100 pF 10 T =175°C VJ IR CT 10 1 150°C 125°C 0.1 100°C 1 0.0 75°C 0.01 50°C 0.001 25°C TVJ= 25°C 100 0.0001 0.4 0.6 0.8 V 1.0 80 0 20 40 60 80 VR Fig. 2 Typ. reverse current IR vs. reverse voltage VR 40 25 A W 20 DC 30 P(AV) d = 0.5 IF(AV) 40 60 80 V 100 VR Fig. 3 Typ. junction capacitance CT versus reverse voltage VR d= DC 0.5 0.33 0.25 0.17 0.08 w 15 20 ne 10 10 20 de Fig. 1 Max. forward voltage drop characteristics 0 100 V si 0.2 VF 5 0 0 0 50 100 0 150 C 200 5 10 15 fo r TC 10 30 A t K/W 20 25 I F(AV) Fig. 5 Forward power loss characteristics Fig. 4 Avg. forward current IF(AV) vs. case temperature TC D = 0.5 No 1 gn T VJ = 175°C 150°C 125°C 25°C Z thJC 0.33 0.25 0.17 0.08 0.1 Single Pulse 0.01 0.0001 DSSK 28-01A 0.001 0.01 0.1 t s Note: All curves are per diode 1 Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, conditions and dimensions. © 2008 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20080612a