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DSSK30-0045A

DSSK30-0045A

  • 厂商:

    IXYS(艾赛斯)

  • 封装:

    TO3P

  • 描述:

    DIODE ARRAY SCHOTTKY 45V TO247AD

  • 数据手册
  • 价格&库存
DSSK30-0045A 数据手册
DSSK 30-0045A IFAV = 2x15 A VRRM = 45 V VF = 0.54 V Power Schottky Rectifier with common cathode VRSM VRRM V V 45 45 A Type C A TO-247 AD A C DSSK 30-0045A A C (TAB) Symbol Conditions IFRMS IFAV IFAV TC = 160°C; rectangular, d = 0.5 TC = 160°C; rectangular, d = 0.5; per device IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine EAS IAR Maximum Ratings A A A 280 A IAS = 15 A; L = 180 µH; TVJ = 25°C; non repetitive 32 mJ VA = 1.5·VRRM typ.; f = 10 kHz; repetitive 1.5 A 1000 V/µs -55...+175 175 -55...+150 °C °C °C 105 W 0.8...1.2 Nm 6 g ne r TVJ TVJM Tstg TC = 25°C Md mounting torque Weight typical Symbol Conditions Characteristic Values typ. max. No t fo Ptot VF w 50 15 30 (dv/dt)cr IR de si gn A = Anode, C = Cathode , TAB = Cathode VR = VRRM; TVJ = 25°C VR = VRRM; TVJ = 125°C IF = 15 A; IF = 15 A; IF = 30 A; TVJ = 125°C TVJ = 25°C TVJ = 125°C RthJC RthCH 0.25 0.5 5 mA mA 0.54 0.66 0.66 V V V 1.4 K/W K/W Features • International standard package • Very low VF • Extremely low switching losses • Low IRM-values • Epoxy meets UL 94V-0 Applications • Rectifiers in switch mode power supplies (SMPS) • Free wheeling diode in low voltage converters Advantages • High reliability circuit operation • Low voltage peaks for reduced protection circuits • Low noise switching • Low losses Dimensions see Outlines.pdf Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0% Data according to IEC 60747 and per diode unless otherwise specified: IXYS reserves the right to change limits, Conditions and dimensions. © 2006 IXYS All rights reserved 0623 Recommended replacement: DSA30C45HB/DSA60C45HB 20080317a 1-2 DSSK 30-0045A 100 10000 100 mA A pF IR IF 10 TVJ=175°C CT 150°C 1 125°C 10 TVJ = 175°C 150°C 125°C 25°C 1000 0.1 100°C 75°C 0.01 50°C 25°C 0.001 0.2 0.4 0.6 0.8 V 1.0 0 10 20 30 VF Fig. 1 Maximum forward voltage drop characteristics 40 W 35 A 50 IF(AV) 25 DC 20 30 10 10 30 VR 40 V Fig. 3 Typ. junction capacitance CT versus reverse voltage VR d= DC 0.5 0.33 0.25 0.17 0.08 ne 15 20 20 IFSM w d=0.5 10 A 30 P(AV) 40 0 40 V 50 VR Fig. 2 Typ. value of reverse current IR versus reverse voltage VR 60 TVJ= 25°C 100 de si gn 1 0.0 0 r 5 0 40 80 120 TC 160°C 0 10 20 30 IF(AV) fo 0 A µs tP Fig. 5 Forward power loss characteristics 1 K/W ZthJC No t Fig. 4 Average forward current IF(AV) versus case temperature TC 40 D=0.5 0.33 0.25 0.17 0.08 0.1 Single Pulse (Thermal Resistance) 0.01 0.0001 DSSK 30-0045A 0.001 0.01 0.1 s 1 10 t IXYS reserves the right to change limits, Conditions and dimensions. © 2006 IXYS All rights reserved Note: All curves are per diode 0623 Fig. 6 Transient thermal impedance junction to case at various duty cycles 2-2
DSSK30-0045A 价格&库存

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