DSSK30-0045B

DSSK 30-0045B IFAV VRRM VF Power Schottky Rectifier with common cathode VRSM VRRM V V 45 45 A Type C A = 2x15 A = 45 V = 0.42 V TO-247 AD A C DSSK 30-0045B A C (TAB) Conditions Maximum Ratings IFRMS IFAV IFAV TC = 135°C; rectangular, d = 0.5 TC = 135°C; rectangular, d = 0.5; per device IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine EAS IAR A A A 320 A IAS = 15 A; L = 180 µH; TVJ = 25°C; non repetitive 32 mJ VA =1.5·VRRM typ.; f=10 kHz; repetitive 1.5 A 1000 V/µs -55...+150 150 -55...+150 °C °C °C 90 W 0.8...1.2 Nm 6 g ne (dv/dt)cr r TVJ TVJM Tstg TC = 25°C Md mounting torque Weight typical Symbol Conditions t No VF fo Ptot IR w 50 15 30 Characteristic Values typ. max. VR = VRRM; TVJ = 25°C VR = VRRM; TVJ = 100°C 10 100 mA mA IF = 15 A; IF = 15 A; IF = 30 A; 0.42 0.47 0.58 V V V 1.4 K/W K/W TVJ = 125°C TVJ = 25°C TVJ = 125°C RthJC RthCH 0.25 Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0% Data according to IEC 60747 and per diode unless otherwise specified: IXYS reserves the right to change limits, Conditions and dimensions. © 2006 IXYS All rights reserved Features • International standard package • Very low VF • Extremely low switching losses • Low IRM-values • Epoxy meets UL 94V-0 Applications • Rectifiers in switch mode power supplies (SMPS) • Free wheeling diode in low voltage converters Advantages • High reliability circuit operation • Low voltage peaks for reduced protection circuits • Low noise switching • Low losses Dimensions see Outlines.pdf Recommended replacement: DSB30C45HB/DSB60C45HB 0623 Symbol de si gn A = Anode, C = Cathode , TAB = Cathode 20080317a 1-2 DSSK 30-0045B 100 10000 1000 mA TVJ=150°C A IR IF 100 pF CT 125°C 10 100°C 10 1000 75°C 1 50°C TVJ = 150°C 125°C 25°C 0.1 25°C TVJ= 25°C 0.2 0.4 0.6 V 0.8 VF Fig. 1 Maximum forward voltage drop characteristics 100 0.01 0 10 20 30 Fig. 2 Typ. value of reverse current IR versus reverse voltage VR 60 50 A 50 W 30 DC w 30 r 10 10 0 0 40 80 120 °C 160 TC 0 10 20 30 IF(AV) fo 0 40 V Fig. 3 Typ. junction capacitance CT versus reverse voltage VR 40 A 50 100 10 100 1000 µs 10000 tP Fig. 5 Forward power loss characteristics 1 No t Fig. 4 Average forward current IF(AV) versus case temperature TC 30 VR 1000 d= DC 0.5 0.33 0.25 0.17 0.08 ne 20 20 20 A IFSM 40 d=0.5 10 10000 40 P(AV) IF(AV) 0 40 V 50 VR de si gn 1 0.0 D=0.5 K/W ZthJC 0.33 0.25 0.17 0.08 Single Pulse 0.1 0.01 0.0001 DSSK 30-0045B 0.001 0.01 0.1 s 1 10 t IXYS reserves the right to change limits, Conditions and dimensions. © 2006 IXYS All rights reserved Note: All curves are per diode 0623 Fig. 6 Transient thermal impedance junction to case at various duty cycles 2-2