DSSK30-018A

DSSK30-018A Schottky Diode VRRM = I FAV = 2x VF = 180 V 15 A 0.74 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSSK30-018A Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20210309a DSSK30-018A Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 180 IR reverse current, drain current VR = 180 V TVJ = 25°C 300 µA VR = 180 V TVJ = 125°C 2.5 mA IF = 15 A TVJ = 25°C 0.88 V IF = 30 A 1.00 V IF = 15 A 0.74 V IF = 30 A VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. TVJ = 125 °C TC = 150 °C rectangular V 0.87 V T VJ = 175 °C 15 A TVJ = 175 °C 0.55 V 8.2 mΩ 1.7 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C EAS non-repetitive avalanche energy I AS = I AR repetitive avalanche current VA = 1.5·V R typ. f = 10 kHz © 2021 IXYS all rights reserved max. Unit 180 V d = 0.5 for power loss calculation only IXYS reserves the right to change limits, conditions and dimensions. typ. K/W 0.25 TC = 25°C 24 V f = 1 MHz 2A L = 100 µH 90 120 72 TVJ = 25 °C Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 0.2 mJ 0.2 A 20210309a DSSK30-018A Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 50 Unit A -55 175 °C -55 150 °C 150 °C 1) 6 Weight MD mounting torque FC mounting force with clip g 0.8 1.2 Nm 20 120 N Product Marking IXYS Logo XXXXXXXXX Part Number Date Code yywwZ 1234 Lot# Location Ordering Standard Ordering Number DSSK30-018A Similar Part DSSK10-018A DSA30C200PB Equivalent Circuits for Simulation I V0 R0 Marking on Product DSSK30-018A Package TO-220AB (3) TO-220AB (3) * on die level Delivery Mode Tube Code No. 477214 Voltage class 180 200 T VJ = 175°C Schottky V 0 max threshold voltage 0.55 V R0 max slope resistance * 5.7 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20210309a DSSK30-018A Outlines TO-247 A E A2 Ø P1 ØP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 3x b C b4 A1 2x e 1 IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved 2 Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20210309a DSSK30-018A Schottky 10 50 300 TVJ=175°C 1 150°C IR TVJ= 25°C 0.1 125°C IF 100 CT [mA] 10 100°C TVJ = 175°C 125°C 25°C [A] 0.01 [pF] 75°C 0.001 50°C 25°C 2 0.4 20 0.0001 0.6 0.8 1.0 1.2 0 50 100 150 200 VF [V] Fig. 2 Typ. value of reverse current IR vs. reverse voltage VR Fig. 1 Max. forward voltage drop characteristics 60 0 50 100 150 200 VR [V] VR [V] Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 60 50 50 DC d=0.5 40 40 IF(AV) 30 P(AV) 30 20 [W] 20 10 10 d= DC 0.5 0.33 0.25 0.17 0.08 [A] 0 0 0 40 80 120 160 0 10 20 30 40 50 IF(AV) [°C] TC [°C] Fig. 4 Average forward current IF(AV) vs. case temp. TC Fig. 5 Forward power loss characteristics 2 1 D=0.5 0.33 0.25 0.17 ZthJC 0.08 Single Pulse 0.1 [K/W] 0.01 0.0001 0.001 0.01 0.1 1 10 t [s] Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20210309a