DSSK48-003B

DSSK48-003B Schottky Diode VRRM = 30 V I FAV = 2x 25 A VF = 0.35 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSSK48-003B Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-220 ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190222b DSSK48-003B Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 30 V IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. VR = 30 V TVJ = 25°C 20 mA 30 V TVJ = 100°C 60 mA TVJ = 25°C 0.44 V 0.54 V 0.35 V IF = 20 A IF = 40 A IF = 20 A IF = 40 A TVJ = 125 °C TC = 130 °C 0.48 V T VJ = 150 °C 25 A TVJ = 150 °C 0.19 V 6.8 mΩ d = 0.5 for power loss calculation only 1.2 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C © 2019 IXYS all rights reserved max. Unit 30 V VR = rectangular IXYS reserves the right to change limits, conditions and dimensions. typ. K/W 0.5 TC = 25°C 5 V f = 1 MHz 105 300 1.77 Data according to IEC 60747and per semiconductor unless otherwise specified W A nF 20190222b DSSK48-003B Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 150 °C -55 125 °C 150 °C 1) 2 Weight MD mounting torque FC mounting force with clip g 0.4 0.6 Nm 20 60 N Product Marking Part Number Logo Date Code Lot # XXXXXX yywwZ 123456 Location Ordering Standard Ordering Number DSSK48-003B Similar Part DSSK48-003BS DSSK48-0025B Equivalent Circuits for Simulation I V0 R0 Marking on Product DSSK48-003B Package TO-263AB (D2Pak) (2) TO-220AB (3) * on die level Delivery Mode Tube Code No. 484008 Voltage class 30 25 T VJ = 150°C Schottky V 0 max threshold voltage 0.19 V R0 max slope resistance * 3.6 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20190222b DSSK48-003B Outlines TO-220 A = supplier option H1 ØP D 4 3 L 3x b2 2 L1 1 3x b C 2x e A2 1 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 2.54 5.85 10.66 BSC 6.85 0.390 0.100 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 ØP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A1 Q E Dim. 2 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20190222b DSSK48-003B Schottky 40 10000 3000 1000 T =150°C VJ 2000 30 100 IF IR TVJ = 150°C 125°C 25°C 20 [A] 10 [mA] 1 125°C TVJ = 25°C CT 100°C [pF] 1000 75°C 50°C 10 0.1 25°C 500 0.01 0.0 0.2 0.4 0.6 0 10 20 30 VR [V] VF [V] Fig. 1 Max. forward voltage drop characteristics 10 20 30 VR [V] Fig. 2 Typ. reverse current IR vs. reverse voltage VR 40 0 Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 16 d = 0.5 12 DC P(AV) IF(AV) 20 d= DC 0.5 0.33 0.25 0.17 0.08 8 [W] [A] 4 0 0 0 40 80 120 160 0 TC [°C] 10 20 30 40 IF(AV) [A] Fig. 5 Forward power loss characteristics Fig. 4 Average forward current IF(AV) vs. case temp. TC 1.2 ZthJC 0.8 [K/W] 0.4 Note: All curves are per diode 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190222b