DSSK50-01A

DSSK 50-01A IFAV = 2x25 A VRRM = 100 V VF = 0.65 V Power Schottky Rectifier with common cathode VRSM VRRM V V 100 100 TO-247 AD Type A DSSK 50-01A C A A C A C (TAB) A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAV IFAV TC = 155°C; rectangular, d = 0.5 TC = 155°C; rectangular, d = 0.5; per device IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine EAS IAR 70 25 50 A A A 450 A IAS = 11 A; L = 180 µH; TVJ = 25°C; non repetitive 13 mJ VA =1.5 • VRRM typ.; f=10 kHz; repetitive 1.1 A (dv/dt)cr 5000 TVJ TVJM Tstg Ptot TC = 25°C Md mounting torque Weight typical Symbol Conditions IR VF  -55...+175 175 -55...+150 °C °C °C 135 W 0.8...1.2 6 Nm g Characteristic Values typ. max. TVJ = 25°C VR = VRRM TVJ = 125°C VR = VRRM IF = 25 A; IF = 25 A; IF = 50 A; V/ms 1 10 TVJ = 125°C TVJ = 25°C TVJ = 125°C RthJC RthCH 0.25 Features • International standard package • Very low VF • Extremely low switching losses • Low IRM-values • Epoxy meets UL 94V-0 Applications • Rectifiers in switch mode power supplies (SMPS) • Free wheeling diode in low voltage converters Advantages • High reliability circuit operation • Low voltage peaks for reduced protection circuits • Low noise switching • Low losses Dimensions see outlines.pdf mA mA 0.65 0.80 0.77 V V V 1.1 K/W K/W IXYS reserves the right to change limits, Conditions and dimensions. © 2000 IXYS All rights reserved 007 Pulse test:  Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified 1-2 DSSK 50-01A 100 10000 100 mA A IR IF pF 10 TVJ=175°C CT 150°C 1 125°C 10 1000 TVJ = 175°C 150°C 125°C 25°C 100°C 0.1 75°C 0.01 50°C 25°C 1 0.0 TVJ= 25°C 100 0.001 0.2 0.4 0.8 V 1.0 0.6 0 20 40 Fig. 1 Maximum forward voltage drop characteristics Fig. 2 Typ. value of reverse current IR versus reverse voltage VR 80 0 80 V 100 VR 60 VF 60 20 40 60 80 V 100 VR Fig. 3 Typ. junction capacitance CT versus reverse voltage VR 10000 W A 50 60 DC d=0.5 IF(AV) A IFSM P(AV) 40 40 d= DC 0.5 0.33 0.25 0.17 0.08 30 20 20 10 0 1000 0 0 40 80 120 TC 160°C Fig. 4 Average forward current IF(AV) versus case temperature TC 0 10 20 30 40 50 IF(AV) 60 A 100 10 100 1000 µs 10000 tP Fig. 5 Forward power loss characteristics 1 K/W ZthJC D=0.5 0.33 0.25 0.17 0.08 0.1 Single Pulse (Thermal Resistance) DSSK 50-01A 0.01 0.0001 0.001 0.01 0.1 1 s 10 t Note: All curves are per diode 007 Fig. 6 Transient thermal impedance junction to case at various duty cycles © 2000 IXYS All rights reserved 2-2