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DSSK80-006B

DSSK80-006B

  • 厂商:

    IXYS(艾赛斯)

  • 封装:

    TO3P

  • 描述:

    DIODE ARRAY SCHOTTKY 60V TO247AD

  • 数据手册
  • 价格&库存
DSSK80-006B 数据手册
DSSK80-006B Schottky Diode VRRM = 60 V I FAV = 2x 40 A VF = 0,51 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSSK80-006B Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220118b DSSK80-006B Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. 60 V VR = 60 V TVJ = 25°C 2 mA 60 V TVJ = 100°C 200 mA TVJ = 25°C 0,55 V 0,75 V 0,51 V IF = 40 A IF = 80 A IF = 40 A IF = 80 A TVJ = 125 °C TC = 140 °C 0,74 V T VJ = 150 °C 40 A TVJ = 150 °C 0,27 V 5,7 mΩ d = 0.5 for power loss calculation only 0,5 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C © 2022 IXYS all rights reserved max. Unit 60 V VR = rectangular IXYS reserves the right to change limits, conditions and dimensions. typ. K/W 0,25 TC = 25°C 12 V f = 1 MHz 300 700 1,34 Data according to IEC 60747and per semiconductor unless otherwise specified W A nF 20220118b DSSK80-006B Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 70 Unit A -55 150 °C -55 125 °C 150 °C 1) 6 Weight MD mounting torque FC mounting force with clip g 0,8 1,2 Nm 20 120 N Product Marking IXYS Logo XXXXXXXXX Part Number Date Code yywwZ 1234 Lot# Location Ordering Standard Ordering Number DSSK80-006B Similar Part DSSK80-006BR Equivalent Circuits for Simulation I V0 R0 Marking on Product DSSK80-006B Package ISOPLUS247 (3) * on die level Delivery Mode Tube Code No. 483745 Voltage class 60 T VJ = 150°C Schottky V 0 max threshold voltage 0,27 V R0 max slope resistance * 3,1 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20220118b DSSK80-006B Outlines TO-247 A E A2 Ø P1 ØP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 3x b C b4 A1 2x e 1 IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved 2 Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20220118b DSSK80-006B Schottky 100 10000 4000 1000 TVJ=150°C 100 125°C IF IR 10 [A] [mA] TVJ = 150°C 125°C 25°C 1 0,0 10 CT 100°C 75°C 1000 1 [pF] 50°C 0,1 25°C 400 0,01 0,2 0,4 TVJ = 25°C 0,6 0,8 0 10 20 30 40 50 60 VR [V] VF [V] Fig. 1 Max. forward voltage drop characteristics 10 20 30 40 50 60 VR [V] Fig. 2 Typ. reverse current IR vs. reverse voltage VR 80 0 Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 50 40 DC 60 d = 0.5 IF(AV) P(AV) 30 d= DC 0.5 0.33 0.25 0.17 0.08 40 [A] [W] 20 20 10 0 0 0 40 80 120 160 200 0 TC [°C] 10 20 30 40 50 60 70 IF(AV) [A] Fig. 4 Average forward current IF(AV) vs. case temp. TC Fig. 5 Forward power loss characteristics 1 D = 0.5 ZthJC 0.33 0.25 0,1 0.17 [K/W] 0.08 Single Pulse 0,01 0,01 Note: All curves are per diode 0,1 1 10 100 1000 t [s] Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220118b
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