DSSK80-006BR

DSSK80-006BR Schottky Diode VRRM = 60 V I FAV = 2x 40 A VF = 0,51 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSSK80-006BR Backside: isolated 1 2 3 Features / Advantages: Applications: Package: ISOPLUS247 ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Backside: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220118b DSSK80-006BR Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. 60 V VR = 60 V TVJ = 25°C 2 mA 60 V TVJ = 100°C 200 mA TVJ = 25°C 0,55 V 0,75 V 0,51 V IF = 40 A IF = 80 A IF = 40 A IF = 80 A TVJ = 125 °C TC = 115 °C 0,74 V T VJ = 150 °C 40 A TVJ = 150 °C 0,27 V 5,7 mΩ d = 0.5 for power loss calculation only 0,8 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C © 2022 IXYS all rights reserved max. Unit 60 V VR = rectangular IXYS reserves the right to change limits, conditions and dimensions. typ. K/W 0,25 TC = 25°C 12 V f = 1 MHz 190 700 1,34 Data according to IEC 60747and per semiconductor unless otherwise specified W A nF 20220118b DSSK80-006BR Package Ratings ISOPLUS247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 70 Unit A -55 150 °C -55 125 °C 150 °C 1) 6 Weight FC 20 mounting force with clip d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL t = 1 minute 120 N terminal to terminal 2,7 mm terminal to backside 4,1 mm 3600 V 3000 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL ≤ 1 mA Product Marking IXYS Logo ISOPLUS® XXXXXXXXX yywwZ Part Number Date Code 1234 Lot# Location Ordering Standard Ordering Number DSSK80-006BR Similar Part DSSK80-006B Equivalent Circuits for Simulation I V0 R0 Marking on Product DSSK80-006BR Package TO-247AD (3) * on die level Delivery Mode Tube Code No. 499552 Voltage class 60 T VJ = 150°C Schottky V 0 max threshold voltage 0,27 V R0 max slope resistance * 3,1 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20220118b DSSK80-006BR Outlines ISOPLUS247 A2 E1 E D2 A Q Dim. D D3 D1 R A A1 A2 b b2 b4 c D D1 D2 D3 E E1 e L L1 Q R W 2 3 L L1 1 2x b2 3x b c b4 Inches min max 0.190 0.205 0.090 0.100 0.075 0.085 0.045 0.055 0.075 0.087 0.115 0.128 0.024 0.033 0.819 0.840 0.620 0.640 0.065 0.085 0.799 0.815 0.620 0.635 0.520 0.540 0.215 BSC 0.780 0.811 0.150 0.172 0.220 0.244 0.167 0.217 0.004 Die konvexe Form des Substrates ist typ. < 0.04 mm über der Kunststoffoberfläche der Bauteilunterseite The convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side 2x e A1 Die Gehäuseabmessungen entsprechen dem Typ TO-247 AD gemäß JEDEC außer Schraubloch und Lmax. This drawing will meet all dimensions requiarement of JEDEC outline TO-247 AD except screw hole and except Lmax. W 1 IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Millimeter min max 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.20 2.92 3.24 0.61 0.83 20.80 21.34 15.75 16.26 1.65 2.15 20.30 20.70 15.75 16.13 13.21 13.72 5.45 BSC 19.81 20.60 3.81 4.38 5.59 6.20 4.25 5.50 0.10 2 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20220118b DSSK80-006BR Schottky 100 10000 4000 1000 TVJ=150°C 100 125°C IF IR 10 [A] [mA] TVJ = 150°C 125°C 25°C 1 0,0 10 CT 100°C 75°C 1000 1 [pF] 50°C 0,1 25°C 400 0,01 0,2 0,4 TVJ = 25°C 0,6 0,8 0 10 20 30 40 50 60 VR [V] VF [V] Fig. 1 Max. forward voltage drop characteristics 10 20 30 40 50 60 VR [V] Fig. 2 Typ. reverse current IR vs. reverse voltage VR 80 0 Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 50 40 60 d = 0.5 IF(AV) DC P(AV) 30 d= DC 0.5 0.33 0.25 0.17 0.08 40 [A] [W] 20 20 10 0 0 0 40 80 120 160 0 TC [°C] 10 20 30 40 50 60 70 IF(AV) [A] Fig. 4 Average forward current IF(AV) vs. case temp. TC Fig. 5 Forward power loss characteristics 1 D = 0.5 0.33 0.25 ZthJC 0,1 0.17 0.08 Single Pulse [K/W] 0,01 0,001 Note: All curves are per diode 0,01 0,1 1 10 t [s] Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220118b