FII24N17AH1

Advance Technical Data High Voltage IGBT Phase-Leg FII24N17AH1 FII24N170AH1 ISOPLUS i4-PACTM Package IC25 = 18 A VCES = 1700 V VCE(sat) = 6.0 V 3 5 4 1 1 2 5 IGBT Symbol Conditions VCES TVJ = 25°C to 150°C VGES Maximum Ratings 1700 V Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 18 A IC90 TC = 90°C 11 A 75 A 50 A 140 W ICM RBSOA VGE = +15 V; RG = 5 Ω; TVJ = 125°C Clamped inductive load; Vclamp = 1360V PC TC = 25°C Symbol Conditions VCE(sat) IC = 16 A; VGE = 15 V VGE(th) IC = 250 µA; VGE = VCE ICES VCE = 0.8 VCES; VGE = 0 V TVJ = 125°C IGES VCE = 0 V; VGE = ± 20 V td(on) tr td(off) tf Eoff Inductive load VCE = 600 V; IC = 24 A VGE = ± 15 V; RG = 39 Ω 48 60 200 45 1.1 ns ns ns ns mJ Inductive load, TVJ = 125°C VCE = 600 V; IC = 24 A VGE = ± 15 V; RG = 39 Ω 40 60 220 55 2.5 1.7 ns ns ns ns mJ mJ td(on) tr td(off) tf Eon Eoff Characteristic Values (TVJ = 25°C unless otherwise specified) min. typ. max. 4.5 4.8 TVJ = 125°C 3.0 6.0 V V 5.0 V 100 1.5 µA mA ±100 nA Features z NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits z SONIC-FRDTM diode - fast reverse recovery - low operating forward voltage - low leakage current z ISOPLUS i4-PACTM package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - industry standard outline - UL registered, E 72873 Applications z Single phaseleg - buck-boost chopper z H-bridge - power supplies - induction heating - four quadrant DC drives - controlled rectifier z Three phase bridge - AC drives - controlled rectifier Note: All characteristic values and ratings refer to a single IGBT or diode except VCES, ICES and Coes. IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved DS99231A (08/05) FII24N17AH1 IGBT Outline Drawing Symbol Conditions Characteristic Values min. typ. max. gfs IC = 24 A, VCE = 10 V, Note 2 10 Qg Qge S 105 nC 17 nC Qgc 30 nC Cies 2400 pF 150 pF Cres 30 pF RthJC RthCK 0.6 0.9 K/W K/W Coes IC = 16 A, VGE = 15 V, VCE = 0.5 VCES 16 VCE = 25 V, VGE = 0 V, f = 1 MHz Diode Symbol Conditions IF25 TC = 25°C 24 A IF90 TC = 90°C 14 A Symbol Conditions VF IF = 20 A IRM IF = 20 A; diF/dt = -450 A/µs; TVJ = 125°C VR = 1200 V; VGE = 0 V trr Maximum Ratings Characteristic Values min. typ. max. 2.5 2.5 TVJ = 125°C 2.95 V V 23 A 230 ns RthJC 1.6 RthCS 0.6 K/W K/W Component Symbol Conditions Maximum Ratings TVJ Tstg VISOL IISOL ≤ 1 mA; 50/60 Hz FC mounting force with clip Symbol Conditions Cp coupling capacity between shorted pins and mounting tab in the case dS,dA dS,dA pin - pin pin - backside metal -55...+150 -55...+125 °C °C 2500 V~ 20...120 N Characteristic Values min. typ. max. 40 1.7 5.5 Weight IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved mm mm 9 4,931,844 5,017,508 5,034,796 pF 6,162,665 6,259,123 B1 6,306,728 B1 g 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692