FII30-12E

FII 30-12E NPT3 IGBT Phaseleg Topology in ISOPLUS i4-PACTM 3 5 4 IC25 = 33 A = 1200 V VCES VCE(sat) typ = 2.4 V 1 1 2 5 IGBTs Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25°C TC = 90°C VGE = ±15 V; RG = 68 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = 900V; VGE = ±15 V; RG = 68 Ω; TVJ = 125°C non-repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 33 20 40 VCES 10 150 V V A A A µs W Features • NPT3 IGBT - positive temperature coefficient of saturation voltage for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits • HiPerFREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current • ISOPLUS i4-PACTM package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - industry standard outline - UL registered, E 72873 Applications • single phaseleg - buck-boost chopper • H bridge - power supplies - induction heating - four quadrant DC drives - controlled rectifier • three phase bridge - AC drives - controlled rectifier Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.4 2.8 4.5 0.2 200 205 105 320 175 4.1 1.5 1.2 100 1.2 2.9 6.5 0.2 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.8 K/W K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC RthJH IC = 20 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 0.6 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 20 A VGE = ±15 V; RG = 68 Ω VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 20 A with heat transfer paste IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved 1-4 0549 FII 30-12E Diodes Symbol IF25 IF90 Conditions TC = 25°C TC = 90°C Maximum Ratings 25 15 A A Equivalent Circuits for Simulation Conduction Symbol VF IRM t rr RthJC RthCH Conditions IF = 20 A; TVJ = 25°C TVJ = 125°C IF = 15 A; diF/dt = -400 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V (per diode) with heat transfer paste Characteristic Values min. typ. max. 2.5 1.9 16 130 3.6 3.0 V V A ns 2.3 K/W K/W IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.09 V; R0 = 85 mΩ Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.3 V; R0 = 32 mΩ Thermal Response Component Symbol TVJ Tstg VISOL FC Symbol Cp dS,dA dS,dA Weight IISOL ≤ 1 mA; 50/60 Hz mounting force with clip Conditions coupling capacity between shorted pins and mounting tab in the case pin - pin pin - backside metal 1.7 5.5 9 Conditions Maximum Ratings -55...+150 -55...+125 2500 20...120 °C °C V~ N Dimensions in mm (1 mm = 0.0394") Characteristic Values min. typ. max. 40 pF mm mm g IGBT (typ.) Cth1 = 0.049 J/K; Rth1 = 0.15 K/W Cth2 = 0.133 J/K; Rth2 = 0.65 K/W Free Wheeling Diode (typ.) Cth1 = 0.021 J/K; Rth1 = 0.63 K/W Cth2 = 0.052 J/K; Rth2 = 1.67 K/W IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved 2-4 0549 FII 30-12E 80 VGE = 17 V A IC 60 TVJ = 25°C 15 V 60 A 50 IC 40 TVJ = 125°C VGE = 17 V 15 V 13 V 13 V 40 11 V 30 20 11 V 20 9V 9V 10 0 0 0 1 2 3 4 VCE 5 V6 0 1 2 3 4 VCE 5 V 6 Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 80 VCE = 20 V 50 40 A 30 TVJ = 125°C TVJ = 125°C TVJ = 25°C A IC 60 TVJ = 25°C IF 40 20 10 0 20 0 0 5 10 VGE 15 V 20 0 1 2 VF 3 V 4 Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 15 V 40 VCE = 600 V IC = 20 A 200 ns A IRM 12 VGE 30 trr 150 trr 9 20 6 3 0 0 20 40 60 80 nC 100 QG TVJ = 125°C VR = 600 V IF = 15 A IRM FII30-12E 100 10 50 0 0 200 400 600 -di/dt 800 s A/µ 0 1000 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode 0549 IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved 3-4 FII 30-12E 20 mJ td(on) tr V CE = 600 V V GE = ± 15 V RG = 6 8 Ω TVJ = 125°C 250 ns 200 t 150 100 50 Eon 0 4.0 3.5 mJ E off 3.0 V CE = 600 V V GE = ±15 V RG = 68 Ω T VJ = 1 25°C 400 td(off) ns 350 300 250 200 150 100 E off tf 0 10 20 IC 30 A 50 0 40 t 16 E on 12 8 4 0 0 2.5 2.0 1.5 1.0 0.5 0.0 10 20 IC 30 A 40 Fig. 7 Typ. turn on energy and switching times versus collector current 10 mJ Eon Fig. 8 Typ. turn off energy and switching times versus collector current 2.5 mJ E off 2.0 V CE = 600 V V GE = ± 15 V IC = 2 0 A TVJ = 125°C 1250 ns 1000 td(off) t 750 500 250 tf 0 8 6 4 2 0 0 50 100 150 RG V CE = 6 00 V V GE = ± 15 V IC = 20 A T VJ = 125°C 1.5 1.0 0.5 0.0 0 Eoff 200 Ω 250 50 100 150 RG 200 Ω 250 Fig. 9 Typ. turn on energy vs gate resistor Fig.10 Typ. turn off energy and switching times versus gate resistor 10 K /W Z thJC 1 IGBT diode 80 A ICM 60 RG = 68 Ω TVJ = 125°C 0.1 0.01 40 20 single pulse 0.001 0.0001 0.00001 0.0001 0.001 FII30-12E 0 0 200 400 600 800 1000 1200 VCE V 0.01 0.1 t 1 s 10 Fig. 11 Reverse biased safe operating area RBSOA Fig. 12 Typ. transient thermal impedance IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved 4-4 0549