FII50-12E

FII 50-12E NPT3 IGBT phaseleg in ISOPLUS i4-PACTM IC25 = 50 A = 1200 V VCES VCE(sat) typ. = 2.0 V 3 5 4 1 1 5 2 IGBTs Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25°C TC = 90°C VGE = ±15 V; RG = 39 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = 900V; VGE = ±15 V; RG = 39 Ω; TVJ = 125°C non-repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 50 32 50 VCES 10 200 V V A A A µs W Features • NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits • HiPerFREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current • ISOPLUS i4-PACTM package - isolated back surface - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - industry standard outline - UL registered, E 72873 Applications • single phaseleg - buck-boost chopper • H bridge - power supplies - induction heating - four quadrant DC drives - controlled rectifier • three phase bridge - AC drives - controlled rectifier Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.0 2.3 4.5 0.4 200 85 50 440 50 4.6 2.2 2 250 1.2 2.6 6.5 0.4 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.6 K/W K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC RthJH IC = 30 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 1 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 30 A VGE = ±15 V; RG = 39 Ω VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 30 A with heatsink compound © 2003 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 1-4 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 320 FII 50-12E Diodes Symbol IF25 IF90 Conditions TC = 25°C TC = 90°C Maximum Ratings 48 25 A A Equivalent Circuits for Simulation Conduction Symbol VF IRM t rr Erec(off) RthJC RthJS Component Symbol TVJ Tstg VISOL FC Symbol dS,dA dS,dA Weight Conditions IF = 30 A; TVJ = 25°C TVJ = 125°C IF = 30 A; diF/dt = -1100 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V (per diode) Characteristic Values min. typ. max. 2.4 1.8 51 180 1.8 1.6 2.8 V V A ns mJ 1.3 K/W K/W IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 0.95 V; R0 = 45 mΩ Diode (typ. at TJ = 125°C) V0 = 1.26V; R0 = 15 mΩ Thermal Response Conditions Maximum Ratings -55...+150 -55...+125 °C °C V~ N IGBT Cth1 = 0.067 J/K; Rth1 = 0.108 K/W Cth2 = 0.175 J/K; Rth2 = 0.491 K/W Diode Cth1 = 0.039 J/K; Rth1 = 0.337 K/W Cth2 = 0.090 J/K; Rth2 = 0.963 K/W IISOL ≤ 1 mA; 50/60 Hz mounting force with clip Conditions pin - pin pin - backside metal 2500 20...120 Characteristic Values min. typ. max. 1.7 5.5 9 mm mm g Dimensions in mm (1 mm = 0.0394") © 2003 IXYS All rights reserved 2-4 320 FII 50-12E 120 A VGE = 17 V 15 V 13 V 100 IC IC 120 A 100 80 60 VGE = 17 V 15 V 80 60 13 V 11 V 11 V 40 20 0 0 1 2 3 4 VCE 9V TVJ = 25°C 40 20 0 9V TVJ = 125°C 5 6V7 0 1 2 3 4 5 VCE 6V7 Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 120 A VCE = 20 V 100 IC IF 90 A 75 60 45 TVJ = 125°C TVJ = 25°C 80 60 40 TVJ = 125°C 30 15 TVJ = 25°C 20 0 4 6 8 10 12 VGE 0 14 V 16 0 1 2 VF 3 V 4 Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 20 V 10 K/W ZthJC 1 IGBT diode 15 VGE 0.1 10 0.01 5 VCE = 600 V IC = 35 A single pulse 0.001 0.0001 0.001 MUBW3512E7 0 0 40 80 120 160nC QG 200 0.01 0.1 t 1 s 10 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. transient thermal impedance 320 © 2003 IXYS All rights reserved 3-4 FII 50-12E 20 mJ td(on) 100 ns 90 80 70 t Eoff 60 V CE = 600 V V GE = ±15 V RG = 39 Ω T VJ = 125°C 6 mJ V CE = 600 V V GE = ±15 V RG = 39 Ω T VJ = 125°C Eoff 1200 ns 1000 800 t 600 16 Eon 4 12 8 4 0 0 20 tr Eon Erec(off) 50 40 30 20 10 0 2 td(off) 400 200 0 0 20 40 IC 60 A tf 40 IC 60 A 80 0 80 Fig. 7 8 mJ Eon Typ. turn on energy and switching times versus collector current 160 Fig. 8 4 mJ t Eoff Typ. turn off energy and switching times versus collector current V CE = 600 V V GE = ±15 V IC = 3 5 A TVJ = 125°C 800 ns 600 t 6 V CE = 600 V V GE = ±15 V IC = 3 5 A T VJ = 125°C Eon ns 120 td(on) 3 Eoff 80 4 tr Erec(off) 2 td(off) 400 2 40 1 tf 200 0 10 20 30 40 50 60 RG 70 Ω 80 0 0 10 20 30 40 50 RG 60 70 Ω 80 0 Fig. 9 Typ. turn on energy and switching times versus gate resistor Fig.10 Typ. turn off energy and switching times versus gate resistor 70 350 12 60 TVJ = 125°C IF = 30 A VR = 600 V RG= IRM 300 10 TVJ = 125°C VR = 600 V 75Ω RG= 56Ω 39Ω 24Ω 15Ω 70A 50 250 8 trr [ns] 200 t RR 50A 35A 40 I RM [A] Qrr [µC] 6 IF = 4 15A 30 150 20 100 7,5A 10 50 2 0 0 200 400 600 800 1000 1200 1400 1600 -di F /dt [A/µs] 0 1800 0 0 200 400 600 800 1000 -diF /dt [A/µs] 1200 1400 1600 1800 Fig. 11 Typ. turn off characteristics of free wheeling diode Fig. 12 Typ. turn off characteristics of free wheeling diode 320 © 2003 IXYS All rights reserved 4-4