FUE30-12N1

FUE30-12N1 HiPerFRED VRRM = 1200 V I DAV = 30 A t rr = 40 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery 3~ Rectifier Bridge Part number FUE30-12N1 Backside: isolated 2 5 4 3 1 Features / Advantages: Applications: Package: i4-Pac ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Rectifiers in switch mode power supplies (SMPS) ● Isolation Voltage: 3000 V~ ● Industry convenient outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Backside: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191211b FUE30-12N1 Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1200 IR reverse current, drain current VR = 1200 V TVJ = 25°C 100 µA VR = 1200 V TVJ = 150°C 0.5 mA IF = 10 A TVJ = 25°C 2.37 V IF = 30 A 3.17 V IF = 10 A 1.60 V IF = 30 A VF forward voltage drop I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. TVJ = 150 °C TC = 120 °C rectangular max. Unit 1200 V V 2.54 V T VJ = 175 °C 30 A TVJ = 175 °C 0.97 V 48 mΩ d=⅓ for power loss calculation only 2.3 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 600 V f = 1 MHz TVJ = 25°C 5 pF TVJ = 25 °C 6 A CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.2 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 15 A; VR = 600 V -di F /dt = 200 A/µs 65 90 W A TVJ = 100 °C 9 A TVJ = 25 °C 50 ns TVJ = 100 °C 140 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20191211b FUE30-12N1 Package Ratings i4-Pac Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 50 Unit A -55 175 °C -55 150 °C 150 °C 6 Weight FC 20 mounting force with clip d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL t = 1 minute 120 N terminal to terminal 1.7 mm terminal to backside 5.1 mm 3000 V 2500 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL ≤ 1 mA Product Marking UL Logo IXYS ® ISOPLUS® Part Number XXXXXXXXX Date Code yywwZ 1234 Location Lot# Ordering Standard Ordering Number FUE30-12N1 Equivalent Circuits for Simulation I V0 R0 * on die level Delivery Mode Tube Quantity 25 Code No. 488690 T VJ = 175°C Fast Diode V 0 max threshold voltage 0.97 R0 max slope resistance * 46 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Marking on Product FUE30-12N1 V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20191211b FUE30-12N1 Outlines i4-Pac D2 A A2 E1 L L1 D D3 D1 R Q E c 1 2 3 4 5 4x e 4x b2 5x b A1 b4 W Dim. A A1 A2 b b2 b4 c D D1 D2 D3 E E1 e L L1 Q R W Millimeter min max 4.83 5.21 2.59 3.00 1.17 2.16 1.14 1.40 1.47 1.73 2.54 2.79 0.51 0.74 20.80 21.34 14.99 15.75 1.65 2.03 20.30 20.70 19.56 20.29 16.76 17.53 3.81 BSC 19.81 21.34 2.11 2.59 5.33 6.20 4.57 2.54 0.10 - Inches min max 0.190 0.205 0.102 0.118 0.046 0.085 0.045 0.055 0.058 0.068 0.100 0.110 0.020 0.029 0.819 0.840 0.590 0.620 0.065 0.080 0.799 0.815 0.770 0.799 0.660 0.690 0.150 BSC 0.780 0.840 0.083 0.102 0.210 0.244 0.100 0.180 0.004 - Die konvexe Form des Substrates ist typ. < 0.05 mm über der Kunststoffoberfläche der Bauteilunterseite The convexbow of substrate is typ. < 0.05 mm over plastic surface level ofdevice bottom side 2 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 5 4 3 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20191211b FUE30-12N1 Fast Diode 35 50 3.0 30 2.5 TVJ = 150°C TVJ = 100°C TVJ = 25°C 25 40 IF = 30 A IF = 15 A IF = 7.5 A 2.0 IF 20 TVJ = 100°C VR = 600 V TVJ = 100°C VR = 600 V Qr IRM 1.5 [A] 15 IF = 30 A IF = 15 A IF = 7.5 A 30 [A] [μC] 20 1.0 10 10 0.5 5 0 0 1 2 3 0 0.0 100 4 0 1000 VF [V] 200 -diF /dt [A/μs] Fig. 1 Forward current IF versus VF 600 800 1000 Fig. 3 Peak reverse current IRM versus -diF /dt Fig. 2 Reverse recovery charge Qr versus -diF /dt 180 2.0 400 -diF /dt [A/μs] 120 TVJ = 100°C VR = 600 V 1.2 TVJ = 100°C IF = 15 A 100 1.0 160 1.5 IF = 30 A IF = 15 A IF = 7.5 A trr Kf 1.0 140 [ns] 0.8 60 0.6 40 0.4 tfr [μs] [V] IRM 0.5 80 VFR 120 QR 20 0.2 VR tfr 0.0 100 0 40 80 120 160 0 0 200 400 600 800 1000 0 200 -diF /dt [A/μs] TVJ [°C] 600 800 0.0 1000 -diF /dt [A/μs] Fig. 5 Recovery time trr versus -diF /dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 400 Fig. 6 Peak forward voltage VFR and tfr versus diF /dt 10 1 ZthJC Constants for ZthJC calculation: 0.1 i [K/W] 0.01 0.001 0.0001 0.001 0.01 0.1 1 Rthi (K/W) ti (s) 1 0.78545 0.0052 2 0.30245 0.0003 3 0.0621 0.0004 4 1.15 0.0092 10 t [s] Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191211b