FUO22-12N

FUO22-12N 3~ Rectifier Standard Rectifier VRRM = 1200 V I DAV = 30 A I FSM = 150 A 3~ Rectifier Bridge Part number FUO22-12N Backside: isolated 2 5 4 3 1 Features / Advantages: Applications: Package: i4-Pac ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current ● Diode for main rectification ● For single and three phase bridge configurations ● Isolation Voltage: 3000 V~ ● Industry convenient outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Backside: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191219c FUO22-12N Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1200 IR reverse current VF forward voltage drop I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved V TVJ = 25°C 10 µA TVJ = 150°C 1 mA TVJ = 25°C 1.20 V 1.62 V 1.12 V IF = 10 A IF = 30 A IF = 10 A IF = 30 A TVJ = 150 °C 1.73 V T VJ = 175 °C 30 A TVJ = 175 °C 0.81 V 31 mΩ d=⅓ for power loss calculation only thermal resistance case to heatsink max. Unit 1300 V VR = 1200 V rectangular R thCH typ. VR = 1200 V TC = 120 °C Ptot min. 3 K/W K/W 0.2 TC = 25°C 50 W t = 10 ms; (50 Hz), sine TVJ = 45°C 150 A t = 8,3 ms; (60 Hz), sine VR = 0 V 160 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 130 A t = 8,3 ms; (60 Hz), sine VR = 0 V 140 A t = 10 ms; (50 Hz), sine TVJ = 45°C 115 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 105 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 85 A²s 82 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 4 pF 20191219c FUO22-12N Package Ratings i4-Pac Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 °C -55 150 °C 150 °C 6 Weight FC 20 mounting force with clip d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL t = 1 minute 120 N terminal to terminal 1.7 mm terminal to backside 5.1 mm 3000 V 2500 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL ≤ 1 mA Product Marking UL Logo IXYS ® ISOPLUS® Part Number XXXXXXXXX Date Code yywwZ 1234 Location Lot# Ordering Standard Ordering Number FUO22-12N Equivalent Circuits for Simulation I V0 R0 * on die level Delivery Mode Tube Quantity 25 Code No. 492426 T VJ = 175°C Rectifier V 0 max threshold voltage 0.81 R0 max slope resistance * 28 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Marking on Product FUO22-12N V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20191219c FUO22-12N Outlines i4-Pac D2 A A2 E1 L L1 D D3 D1 R Q E c 1 2 3 4 5 4x e 4x b2 5x b A1 b4 W Dim. A A1 A2 b b2 b4 c D D1 D2 D3 E E1 e L L1 Q R W Millimeter min max 4.83 5.21 2.59 3.00 1.17 2.16 1.14 1.40 1.47 1.73 2.54 2.79 0.51 0.74 20.80 21.34 14.99 15.75 1.65 2.03 20.30 20.70 19.56 20.29 16.76 17.53 3.81 BSC 19.81 21.34 2.11 2.59 5.33 6.20 4.57 2.54 0.10 - Inches min max 0.190 0.205 0.102 0.118 0.046 0.085 0.045 0.055 0.058 0.068 0.100 0.110 0.020 0.029 0.819 0.840 0.590 0.620 0.065 0.080 0.799 0.815 0.770 0.799 0.660 0.690 0.150 BSC 0.780 0.840 0.083 0.102 0.210 0.244 0.100 0.180 0.004 - Die konvexe Form des Substrates ist typ. < 0.05 mm über der Kunststoffoberfläche der Bauteilunterseite The convexbow of substrate is typ. < 0.05 mm over plastic surface level ofdevice bottom side 2 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 5 4 3 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20191219c FUO22-12N Rectifier 30 130 120 50 Hz, 80% VRRM 120 100 110 20 IF 80 2 IFSM 100 It [A] 90 2 60 TVJ = 125°C 150°C [A] TVJ = 45°C TVJ = 45°C 10 TVJ = 150°C [A s] 40 80 TVJ = 150°C 20 70 TVJ = 25°C 0 0.5 1.0 1.5 60 0.001 2.0 0 0.01 0.1 1 1 10 VF [V] t [s] t [ms] Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current Fig. 3 I t versus time per diode 2 20 DC = 1 0.5 0.4 0.33 0.17 0.08 16 12 30 DC = 1 0.5 0.4 0.33 0.17 0.08 20 Ptot IF(AV)M RthKA K/W 0.6 0.8 1 2 4 8 8 [W] 4 [A] 10 0 0 0 5 10 0 50 100 150 0 50 Tamb [°C] IF(AV)M [A] 100 150 200 TC [°C] Fig. 4 Power dissipation vs. direct output current & ambient temperature Fig. 5 Max. forward current vs. case temperature 3 ZthJC Constants for ZthJC calculation: 2 i [K/W] 1 Rthi (K/W) ti (s) 1 1.359 0.1015 2 0.3286 0.1026 3 0.4651 0.4919 4 0.8473 0.62 0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191219c