IRFP264

IRFP 264 Standard Power MOSFET VDSS = 250 V ID (cont) = 38 A RDS(on) = 0.075 Ω N-Channel Enhancement Mode VDSS TJ = 25°C to 150°C 250 VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 250 VGS Continuous ±20 VGSM Transient ±30 ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM IAR Maximum Ratings TC = 25°C dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω PD TC = 25°C TJM T stg Md Weight O 38 A 150 A 38 A 28 mJ 5 V/ns 150 °C -55 ... +150 °C 250 VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V g 300 °C l l l l V V ±100 nA TJ = 25°C TJ = 125°C 25 250 µA µA VGS = 10 V, ID = 23 A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 0.075 Ω © 2000 IXYS All rights reserved D = Drain, TAB = Drain Features l 6 4 IXYS reserves the right to change limits, test conditions, and dimensions. G = Gate, S = Source, 1.13/10 Nm/lb.in. Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 250 µA D (TAB) V °C VDSS R DS(on) V -55 ... +150 Mounting torque Test Conditions V W Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol V 280 BS O EAR TJ TO-247 AD E Test Conditions LE T Symbol International standard package JEDEC TO-247 AD Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure High commutating dv/dt rating Fast switching times Applications l l l l Switch-mode and resonant-mode power supplies Motor controld Uninterruptible Power Supplies (UPS) DC choppers Advantages l l l Easy to mount with 1 screw (isolated mounting screw hole) Space savings High power density 96668(1/96) 1-2 IRFP 264 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 23 A, pulse test 20 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss t d(on) tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 38 A td(off) RG = 3.2 Ω, (External) tf S 4800 pF 745 pF 280 pF 22 ns 99 ns 110 ns 92 ns VGS = 10 V, VDS = 200 V, ID = 38 A Q gd Symbol Test Conditions IS VGS = 0 V nC Terminals: 1 - Gate 3 - Source 3 2 - Drain Tab - Drain Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ∅ P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. A Repetitive; pulse width limited by TJM 150 A IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.8 V BS O 38 IF = IS, -di/dt = 100 A/µs, VR = 100 V 370 ns O t rr 98 0.25 Source-Drain Diode VSD nC 0.45 R thCK ISM nC 35 2 LE T R thJC 210 1 E Q g(on) Q gs TO-247 AD Outline © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2