IXA12IF1200TC

IXA12IF1200TC preliminary XPT IGBT VCES = 1200 V I C25 = 20 A VCE(sat) = 1.8 V Copack Part number IXA12IF1200TC Backside: collector 2 (C) (G) 1 3 (E) Features / Advantages: Applications: Package: TO-268AA (D3Pak) ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic ● Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) ● SONIC™ diode - fast and soft reverse recovery - low operating forward voltage ● AC motor drives ● Solar inverter ● Medical equipment ● Uninterruptible power supply ● Air-conditioning systems ● Welding equipment ● Switched-mode and resonant-mode power supplies ● Inductive heating, cookers ● Pumps, Fans ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20110330a IXA12IF1200TC preliminary Ratings IGBT Symbol VCES Definition collector emitter voltage VGES max. DC gate voltage VGEM max. transient gate emitter voltage I C25 collector current Conditions min. TVJ = 25°C TC = 25°C I C100 V 6.5 V 0.1 mA I C = 0.3 mA; VGE = VCE TVJ = 25°C I CES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C TVJ = 25°C 1.8 TVJ = 125 °C t d(on) turn-on delay time tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area 600 V; IC = 5.4 5.9 10 A TVJ = 125 °C 10 A VGE = ±15 V; R G = 100 Ω VGE = ±15 V; R G = 100 Ω short circuit safe operating area VCEmax = 900 V t SC short circuit duration VCE = 900 V; VGE = ±15 V R G = 100 Ω; non-repetitive I SC R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink nA 27 nC 70 ns 40 ns 250 ns 100 ns 1.1 mJ 1.1 mJ TVJ = 125 °C VCEmax = 1200 V SCSOA short circuit current mA 0.1 500 inductive load VCE = V 2.1 TVJ = 125 °C VCE = 600 V; VGE = 15 V; IC = A 2.1 gate emitter threshold voltage VGE = ±20 V V 20 A VGE(th) total gate charge ±30 W IC = gate emitter leakage current V 13 collector emitter saturation voltage Q G(on) ±20 85 VCE(sat) I GES Unit V TC = 25°C total power dissipation 10 A; VGE = 15 V max. 1200 TC = 100 °C Ptot I CM typ. TVJ = 125 °C 30 A 10 µs A 40 1.5 K/W K/W 0.15 Diode VRRM max. repetitive reverse voltage TVJ = 25°C 1200 V I F25 forward current TC = 25°C 22 A TC = 100 °C 14 A TVJ = 25°C 2.20 V * mA I F 100 10 A VF forward voltage IF = IR reverse current VR = VRRM TVJ = 125°C * not applicable, see Ices value above Q rr reverse recovery charge I RM max. reverse recovery current t rr reverse recovery time E rec reverse recovery energy R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved TVJ = 25°C * mA 1.3 µC 10.5 A TVJ = 125°C VR = 600 V -di F /dt = -250 A/µs IF = 10 A; VGE = 0 V TVJ = 125°C V 1.95 350 ns 0.35 mJ 1.8 K/W 0.15 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20110330a IXA12IF1200TC preliminary Package Ratings TO-268AA (D3Pak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 70 Unit A -40 150 °C -40 125 °C 150 °C Weight FC 5 20 mounting force with clip Product Marking I X A 12 IF 1200 TC Part No. Assembly Line Zyyww Assembly Code abcd 120 N Part number IXYS Logo g = = = = = = = IGBT XPT IGBT Gen 1 / std Current Rating [A] Copack Reverse Voltage [V] TO-268AA (D3Pak) (2) Date Code Ordering Standard Part Number IXA12IF1200TC Similar Part IXA12IF1200HB IXA12IF1200PB Equivalent Circuits for Simulation I V0 R0 Marking on Product IXA12IF1200TC Package TO-247AD (3) TO-220AB (3) Delivery Mode Tube T VJ = 150 °C * on die level IGBT Diode threshold voltage 1.1 1.25 R 0 max slope resistance * 153 85 © 2011 IXYS all rights reserved Code No. 508475 Voltage class 1200 1200 V 0 max IXYS reserves the right to change limits, conditions and dimensions. Quantity 30 V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20110330a IXA12IF1200TC preliminary Outlines TO-268AA (D3Pak) Dim. A A1 A2 b b2 C C2 D D1 E E1 e H L L1 L2 L3 L4 Millimeter min max 4.90 5.10 2.70 2.90 0.02 0.25 1.15 1.45 1.90 2.10 0.40 0.65 1.45 1.60 13.80 14.00 12.40 12.70 15.85 16.05 13.30 13.60 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches min max 0.193 0.201 0.106 0.114 0.001 0.100 0.045 0.057 0.075 0.083 0.016 0.026 0.057 0.063 0.543 0.551 0.488 0.500 0.624 0.632 0.524 0.535 0.215 BSC 0.736 0.752 0.094 0.106 0.047 0.055 0.039 0.045 0.100 BSC 0.150 0.161 2 (C) (G) 1 3 (E) IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20110330a IXA12IF1200TC preliminary IGBT 20 IC 20 VGE = 15 V 16 16 12 12 IC TVJ = 25°C [A] TVJ = 125°C 8 20 VGE = 15 V 17 V 19 V 13 V 16 11 V TVJ = 125°C IC 12 [A] 8 [A] 8 9V 4 4 4 0 0 0 TVJ = 125°C TVJ = 25°C 0 1 2 3 0 1 2 3 4 5 7 VCE [V] VCE [V] Fig. 1 Typ. output characteristics 3.0 IC = 10 A VCE = 600 V 15 IC = 10 A VCE = 600 V VGE = ±15 V TVJ = 125°C 1.6 2.0 E E 10 11 12 13 Fig. 3 Typ. tranfer characteristics Eon VGE 10 9 1.8 RG = 100 VCE = 600 V VGE = ±15 V TVJ = 125°C 2.5 8 VGE [V] Fig. 2 Typ. output characteristics 20 [V] 6 Eoff 1.5 [mJ] 1.0 Eon 1.4 [mJ] 1.2 Eoff 5 1.0 0.5 0 0.0 0 10 20 30 0 8 12 16 IC [A] QG [nC] Fig. 4 Typ. turn-on gate charge 4 Fig. 5 Typ. switching energy vs. collector current 20 0.8 80 120 160 200 240 RG [ ] Fig. 6 Typ. switching energy vs. gate resistance Fig. 7 Typ. transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20110330a IXA12IF1200TC preliminary Diode 2.4 20 24 TVJ = 125°C TVJ = 125°C VR = 600 V 2.0 20 A VR = 600 V 15 20 A 20 1.6 IF Qrr 10 [A] [μC] 5 IRM 10 A 1.2 0.8 TVJ = 125°C 0.5 1.0 [A] 5A 5A 12 TVJ = 25°C 0 0.0 10 A 16 0.4 1.5 2.0 2.5 0.0 200 250 300 350 400 450 500 3.0 VF [V] 8 200 250 300 350 400 450 500 diF /dt [A/μs] diF /dt [A/μs] Fig. 1 Typ. forward current versus VF Fig. 2 Typical reverse recov. charge Qrr versus. diF /dt 500 Fig.3 Typ: peak reverse current IRR versus diF /dt 0.6 20 A TVJ = 125°C TVJ = 125°C VR = 600 V 0.5 VR = 600 V 20 A 400 10 A Erec 0.4 trr 300 [ns] [mJ] 0.3 5A 200 0.2 100 200 250 300 350 400 450 500 diF /dt [A/μs] Fig. 4 Dynamic parameters Qrr, IRM versus TVJ 10 A Fig. 5 Typ. recovery time trr versus diF /dt 5A 0.1 200 250 300 350 400 450 500 diF /dt [A/μs] Fig. 6 Typ. recovery energy Erec vs. diF /dt Fig. 7 Typ. transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20110330a Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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