IXA20I1200PB

IXA20I1200PB preliminary XPT IGBT VCES = 1200 V I C25 = 38 A VCE(sat) = 1.8 V Single IGBT Part number IXA20I1200PB Backside: collector (C) 2 (G) 1 (E) 3 Features / Advantages: Applications: Package: TO-220 ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic ● Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) ● AC motor drives ● Solar inverter ● Medical equipment ● Uninterruptible power supply ● Air-conditioning systems ● Welding equipment ● Switched-mode and resonant-mode power supplies ● Inductive heating, cookers ● Pumps, Fans ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131024a IXA20I1200PB preliminary Ratings IGBT Symbol VCES Definition collector emitter voltage VGES max. DC gate voltage VGEM max. transient gate emitter voltage I C25 collector current Conditions min. TVJ = 25°C TC = 25°C I C80 V 6.5 V 0.1 mA I C = 0.6 mA; VGE = VCE TVJ = 25°C I CES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C TVJ = 25°C 1.8 TVJ = 125 °C t d(on) turn-on delay time tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area 5.4 5.9 15 A TVJ = 125 °C 600 V; IC = 15 A VGE = ±15 V; R G = 56 Ω VGE = ±15 V; R G = 56 Ω short circuit safe operating area VCEmax = 900 V t SC short circuit duration VCE = 900 V; VGE = ±15 V R G = 56 Ω; non-repetitive I SC R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink nA 47 nC 70 ns 40 ns 250 ns 100 ns 1.65 mJ 1.7 mJ TVJ = 125 °C VCEmax = 1200 V SCSOA short circuit current mA 0.1 500 inductive load VCE = V 2.1 TVJ = 125 °C VCE = 600 V; VGE = 15 V; IC = A 2.1 gate emitter threshold voltage VGE = ±20 V V 38 A VGE(th) total gate charge ±30 W IC = gate emitter leakage current V 22 collector emitter saturation voltage Q G(on) ±20 165 VCE(sat) I GES Unit V TC = 25°C total power dissipation 15 A; VGE = 15 V max. 1200 TC = 80 °C Ptot I CM typ. TVJ = 125 °C 45 A 10 µs A 60 0.76 K/W K/W 0.50 Diode VRRM max. repetitive reverse voltage TVJ = 25°C 1200 V I F25 forward current TC = 25°C tbd A TC = 80 °C tbd A TVJ = 25°C tbd V * mA I F 80 VF forward voltage IF = A IR reverse current VR = VRRM TVJ = 125°C TVJ = 25°C * not applicable, see Ices value above V tbd * mA tbd µC tbd A TVJ = 125°C Q rr reverse recovery charge I RM max. reverse recovery current t rr reverse recovery time E rec reverse recovery energy R thJC thermal resistance junction to case tbd K/W R thCH thermal resistance case to heatsink K/W IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved VR = 600 V -di F /dt = IF = A/µs A; VGE = 0 V TVJ = 125°C tbd ns tbd mJ Data according to IEC 60747and per semiconductor unless otherwise specified 20131024a IXA20I1200PB preliminary Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 35 Unit A -40 150 °C -40 125 °C 150 °C Weight 2 MD mounting torque FC mounting force with clip Product Marking Part Number 0.4 0.6 Nm 20 60 N Part number I X A 20 I 1200 PB XXXXXX Logo Assembly Line Lot # g = = = = = = = IGBT XPT IGBT Gen 1 / std Current Rating [A] Single IGBT Reverse Voltage [V] TO-220AB (3) Zyyww abcdef Date Code Ordering Standard Part Number IXA20I1200PB Similar Part IXA20IF1200HB Equivalent Circuits for Simulation I V0 R0 Marking on Product IXA20I1200PB Package TO-247AD (3) Delivery Mode Tube T VJ = 150 °C * on die level IGBT threshold voltage 1.1 V R 0 max slope resistance * 86 mΩ © 2013 IXYS all rights reserved Code No. 507929 Voltage class 1200 V 0 max IXYS reserves the right to change limits, conditions and dimensions. Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20131024a IXA20I1200PB preliminary Outlines TO-220 Dim. Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 2.54 5.85 10.66 BSC 6.85 0.390 0.100 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 ØP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A A1 ØP H1 Q E D 4 3 L 3x b2 2 L1 1 3x b 2x e C A2 (C) 2 (G) 1 (E) 3 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131024a Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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