IXA20PG1200DHGLB-TRR

IXA 20PG1200DHGLB Advanced Technical Information XPT IGBT phaseleg IC25 = 32 A = 1200 V VCES VCE(sat) typ = 1.8 V ISOPLUS™ Surface Mount Power Device 7 D3 6 D1 S1 4 5 7 D4 9 1 D2 3 S2 Iso la to ted he su at rfa sin ce k 8 9 4 6 5 2 1 3 2 E72873 8 Features IGBTs S1, S2 Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC80 TC = 25°C TC = 80°C ICM VCEK VGE = 15 V; RG = 56 W; TVJ = 125°C RBSOA, clamped inductive load; L = 100 µH tSC (SCSOA) VCE = 900 V; VGE = ±15 V; RG = 56 W; TVJ = 125°C none repetitive Ptot TC = 25°C Symbol Conditions 1200 V ±20 V 32 23 A A 45 VCES A 10 µs 130 W Characteristic Values (TVJ = 25°C, unless otherwise specified) min. VCE(sat) IC = 15 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 0.6 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES VCE = 0 V ; VGE = ± 20 V td(on) tr td(off) tf Eon Eoff E(rec)off Inductive load; TVJ = 125°C VCE = 600 V; IC = 15 A VGE = ±15 V; RG = 56 W Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 15 A RthJC RthJH with heatsink compound (IXYS test setup) max. 1.8 2.1 2.1 V V 6.5 V 125 µA µA 500 nA 5.4 250 70 40 250 100 1.55 1.7 ns ns ns ns mJ mJ tbd 48 pF nC 1.35 IXYS reserves the right to change limits, test conditions and dimensions. © 2012 IXYS All rights reserved typ. 1.0 1.7 • XPT IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits • Sonic™ diode - fast reverse recovery - low operating forward voltage - low leakage current • VCEsat detection diode - integrated into package - very fast diode • Package - isolated back surface - low coupling capacity between pins and heatsink - PCB space saving - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability Applications • Phaseleg - buck-boost chopper • Full bridge - power supplies - induction heating - four quadrant DC drives - controlled rectifier • Three phase bridge - AC drives - controlled rectifier K/W K/W 20120131b 1-5 IXA 20PG1200DHGLB Advanced Technical Information Diodes D1, D2 Symbol Conditions IF25 IF80 TC = 25°C TC = 80°C Symbol Conditions Equivalent Circuits for Simulation Maximum Ratings 27 18 A A Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VF IF = 20 A TVJ = 25°C TVJ = 125°C 2.0 2.0 IRM trr Erec IF = 20 A; RG = 56 W; TVJ = 125°C VR = 600 V; VGE = -15 V 20 350 tbd RthJC RthJH per diode with heatsink compound (IXYS test setup) 1.75 2.3 V V A ns mJ 1.35 2.2 Conduction I V0 R0 IGBTs (typ. at VGE = 15 V; TJ = 125°C) S1, S2 V0 = 1.1 V; R0 = 90 mW Diodes (typ. at TJ = 125°C) D1, D2 V0 = 1.3 V; R0 = 41 mW K/W K/W Diodes D3, D4 Symbol Conditions VR TC = 25°C to 150°C Symbol Conditions Maximum Ratings 1200 V Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VF IF = 1 A TVJ = 25°C TVJ = 125°C 1.7 1.5 IR VR = 1200 V TVJ = 25°C TVJ = 125°C IRM trr IF = 1 A; diF /dt = -100 A/µs; TVJ = 25°C VR = 100 V; VGE = 0 V 2.2 V V 2 30 µA µA 2.3 40 A ns Component Symbol Conditions Maximum Ratings TVJ Tstg VISOL IISOL < 1 mA; 50/60 Hz FC mounting force Symbol Conditions CP coupling capacity between shorted pins and backside metal dS, dA dS, dA pin - pin pin - backside metal -55...+150 -55...+125 °C °C 2500 V~ 40 ... 130 N Characteristic Values min. typ. max. 90 pF 1.65 4 CTI mm mm 400 Weight 8 g Ordering Ordering Name Marking on Product Delivering Base Ordering Mode Qty Code Standard IXA20PG1200DHGLB IXA20PG1200DHGLB Tape&Reel IXYS reserves the right to change limits, test conditions and dimensions. © 2012 IXYS All rights reserved 200 tbd 20120131b 2-5 IXA 20PG1200DHGLB Advanced Technical Information (6x) 1 ±0,05 2) 5,5 ±0,1 Dimensions in mm (1 mm = 0.0394“) 0 +0,15 2°  0,1 A (8 : 1) 25 ±0,2 1) seating plane 18 ±0,1 4 ±0,05 (3x) 2 ±0,05 2) 0,55 ±0,1 32,7 ±0,5 23 ±0,2 2 ±0,2 9 ±0,1 4,85 ±0,2 0,5 ±0,1 A 3)  0,05 2,75 ±0,1 5,5 ±0,1 13,5 ±0,1 16,25 ±0,1 19 ±0,1 Notes: 1) potrusion may add 0.2 mm max. on each side 2) additional max. 0.05 mm per side by punching misalignement or overlap of dam bar or bending compression 3) DCB area 10 to 50 µm convex; position of DCB area in relation to plastic rim: ±25 µm (measured 2 mm from Cu rim) 4) terminal plating: 0.2 - 1 µm Ni + 10 - 25 µm Sn (gal v.) cutting edges may be partially free of plating IXYS reserves the right to change limits, test conditions and dimensions. © 2012 IXYS All rights reserved 20120131b 3-5 IXA 20PG1200DHGLB Advanced Technical Information 30 IC [A] 30 VGE = 15 V 25 25 20 20 TVJ = 25°C 15 IC TVJ = 125°C 11 V TVJ = 125°C 15 [A] 10 9V 10 5 0 13 V VGE = 15 V 17 V 19 V 5 0 1 2 0 3 VCE [V] Fig. 1 Typ. output characteristics 0 1 2 3 VCE [V] 4 5 Fig. 2 Typ. output characteristics 30 20 IC = 15 A VCE = 600 V 25 15 20 IC [A] VGE 15 10 [V] 10 5 0 5 TVJ = 125°C TVJ = 25°C 5 6 7 8 9 10 11 12 0 13 0 10 20 VGE [V] 4 E Eon 2.4 Eoff E [mJ] [mJ] 1 5 10 60 15 20 25 30 35 IC [A] Fig. 5 Typ. switching energy vs. collector current 140 160 IXYS reserves the right to change limits, test conditions and dimensions. © 2012 IXYS All rights reserved IC = 15 A VCE = 600 V VGE = ±15 V TVJ = 125°C 2.0 1.6 0 50 2.8 RG = 56 Ω VCE = 600 V VGE = ±15 V TVJ = 125°C 2 0 40 Fig. 4 Typ. turn-on gate charge Fig. 3 Typ. tranfer characteristics 3 30 QG [nC] 1.2 40 Eoff Eon 60 80 100 120 RG [Ω] Fig. 6 Typ. switching energy vs. gate resistance 20120131b 4-5 Advanced Technical Information 40 IXA 20PG1200DHGLB 5 TVJ = 125°C VR = 600 V 30 4 40 A IF Qrr 20 [A] 3 20 A [µC] TVJ = 125°C 10 2 TVJ = 25°C 0 0.0 0.5 1.0 1.5 VF [V] 2.0 2.5 10 A 1 200 3.0 Fig. 7 Typ. Forward current versus VF 300 400 500 diF /dt [A/µs] 600 700 Fig. 8 Typ. reverse recov.charge Qrr vs. di/dt 35 700 40 A TVJ = 125°C 30 VR = 600 V 20 A 25 TVJ = 125°C 600 VR = 600 V 500 10 A IRRM 20 [A] 15 trr 400 40 A [ns] 300 10 200 5 100 0 200 300 400 500 diF /dt [A/µs] 600 20 A 10 A 0 200 700 Fig. 9 Typ. peak reverse current IRM vs. di/dt 300 400 500 diF /dt [A/µs] 600 700 Fig. 10 Typ. recovery time trr versus di/dt 1.4 10 TVJ = 125°C VR = 600 V 1.2 Diode 1.0 1 40 A Erec IGBT ZthJC 0.8 20 A [mJ] [K/W] 0.6 0.1 10 A 0.4 0.2 200 300 400 500 diF /dt [A/µs] 600 700 Fig. 11 Typ. recovery energy Erec versus di/dt IXYS reserves the right to change limits, test conditions and dimensions. © 2012 IXYS All rights reserved 0.01 0.001 0.01 0.1 tp [s] 1 10 Fig. 12 Typ. transient thermal impedance 20120131b 5-5 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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