IXA20RG1200DHGLB-TRR

IXA20RG1200DHGLB tentative XPT IGBT VCES = 1200 V I C25 = 32 A VCE(sat) = 1.8 V ISOPLUS™ Surface Mount Power Device Boost Topology XPT IGBT Part number IXA20RG1200DHGLB Backside: isolated 7 BD 9 VDD 1 FWD 3 2 8 Features / Advantages: Applications: Package: SMPD ● XPT IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits ● Sonic™ diode - fast reverse recovery - low operating forward voltage - low leakage current - low temperature dependency of reverse recovery ● Vcesat detection diode (VDD) - integrated into package - very fast diode ● AC drives - brake chopper ● PFC - boost chopper ● Switched reluctance drives ● Industry convenient outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Backside: DCB ceramic ● Reduced weight ● Advanced power cycling ● Isolation Voltage: 3000 V~ IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20120618 IXA20RG1200DHGLB tentative Ratings Free Wheeling Diode FWD Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 1200 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1200 V IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. VR = 1200 V TVJ = 25°C 25 µA VR = 1200 V TVJ = 125°C 0.4 mA TVJ = 25°C 2.20 V IF = 20 A IF = 40 A IF = 20 A IF = 40 A V TVJ = 125°C 2.20 T VJ = 150 °C 18 A TVJ = 150 °C 1.29 V d = 0.5 for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C reverse current, drain current 150 10 VF0 threshold voltage rF slope resistance CJ I RM junction capacitance t rr © 2012 IXYS all rights reserved A pF typ. max. 1200 Unit V VR/D = 1200 V TVJ = 25°C 2 µA TVJ = 125 °C 0.03 mA IF = 1 A TVJ = 25°C 2.20 V IF = 1 A TVJ = 125 °C 1.80 V TVJ = 150 °C 1.30 V 390 mΩ VR = 400 V; f = 1 MHz TVJ = 25°C tbd pF TVJ = 25 °C 2.3 A VR = 100 V; I F = 1 A TVJ = 125°C tbd A max. reverse recovery current IXYS reserves the right to change limits, conditions and dimensions. W VR/D = 1200 V for power loss calculation only reverse recovery time min. TVJ = 25°C max. repetitive reverse blocking voltage forward voltage drop K/W Ratings Conditions IR mΩ K/W 93 VCEsat Detection Diode VDD Definition 41 1.35 0.40 TC = 25°C Symbol VRRM V V TC = 80°C rectangular VF typ. -di/dt = 100 A/µs TVJ = 25 °C 40 ns TVJ = 125°C tbd ns Data according to IEC 60747and per semiconductor unless otherwise specified 20120618 IXA20RG1200DHGLB tentative Ratings Boost IGBT Symbol VCES collector emitter voltage Definition VGES Conditions min. max. 1200 Unit V max. DC gate voltage ±20 V VGEM max. transient collector gate voltage ±30 V I C25 collector current TVJ = I C80 TC = 25°C 32 A TC = 80 °C 23 A 125 W 2.1 V Ptot total power dissipation VCE(sat) collector emitter saturation voltage VGE(th) gate emitter threshold voltage I C = 0.6 mA; VGE = VCE TVJ = 25°C I CES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C I GES gate emitter leakage current VGE = ±20 V TC = 25°C Q G(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 15 A t d(on) turn-on delay time I C = 15 A; VGE = 15 V TVJ = 25°C 1.8 TVJ = 125°C 2 TVJ = 125°C tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area I CM typ. 25°C inductive load 5.9 TVJ = 125°C VGE = ±15 V; R G = 56 Ω short circuit safe operating area VCEmax = 1200 V t SC short circuit duration VCE = 900 V; VGE = ±15 V I SC short circuit current R G = 56 Ω; non-repetitive R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink V 0.1 mA mA 0.1 nA 48 nC 70 ns 40 ns 250 ns 100 ns 1.55 mJ 1.7 mJ TVJ = 125°C VCEmax = 1200 V SCSOA 6.5 500 VCE = 600 V; IC = 15 A VGE = ±15 V; R G = 56 Ω 5.4 V TVJ = 125°C 45 A 10 µs A 60 1 K/W K/W 0.30 Boost Diode BD VRRM max. repetitive reverse voltage TVJ = 25°C 1200 V I F25 forward current TC = 25°C 27 A TC = 80 °C 18 A 2.20 V I F 80 VF forward voltage I F = 20 A TVJ = 25°C TVJ = 125°C IR reverse current VR = VRRM Q rr reverse recovery charge I RM max. reverse recovery current t rr reverse recovery time E rec reverse recovery energy R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved VR = 600 V -di F /dt = 400 A/µs IF = 20 A; VGE = 0 V 0.03 TVJ = 25°C TVJ = 125°C TVJ = 125°C V 1.90 mA 0.12 mA 3 µC 20 A 350 ns 0.7 mJ 1.35 K/W 0.4 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20120618 IXA20RG1200DHGLB tentative Package Ratings SMPD Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 100 Unit A -55 150 °C -55 150 °C Weight FC 8.5 40 mounting force with clip VISOL t = 1 second isolation voltage t = 1 minute d Spp/App d Spb/Apb UL Logo ~ Assembly line I X A 20 RG 1200 D H G LB XXXXXXXXXX yywwA Data Matrix Code Digits 1 to 19: 20 to 23: 24 to 25: 26 to 31: 32: 33 to 36: Part # Date Code Assembly line Lot # Split Lot Individual # N V 2500 V terminal to terminal 1.6 mm terminal to backside 4.0 mm Part number ~ Backside DCB Part number Date code 130 3000 50/60 Hz, RMS; IISOL ≤ 1 mA creepage distance on surface | striking distance through air ~ g = = = = = = = = = = IGBT XPT IGBT Gen 1 / std Current Rating [A] boost configuration Reverse Voltage [V] IGBT XPT IGBT Gen 1 / std SMPD-B Pin 1 identifier Ordering Standard Alternative Part Number IXA20RG1200DHGLB IXA20RG1200DHGLB-TRR Similar Part IXA30RG1200DHGLB IXA40RG1200DHGLB IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved Marking on Product IXA20RG1200DHGLB IXA20RG1200DHGLB Package SMPD-B SMPD-B Delivery Mode Blister Tape & Reel Quantity 45 200 Code No. 512349 512370 Voltage class 1200 1200 Data according to IEC 60747and per semiconductor unless otherwise specified 20120618 IXA20RG1200DHGLB tentative Outlines SMPD A(8:1) 2) 5,5 ` 0,1 (6x) 1 `0,05 0 + 0,15 2° c 0,1 0,5 ` 0,1 1) 18 `0,1 seating plane (3x) 2 ` 0,05 9 ` 0,1 2) 4 ` 0,05 8 9 23 ` 0,2 32,7 `0,5 2 `0,2 7 0,55 ` 0,1 4,85 ` 0,2 25 `0,2 3) c 0,05 6 5 4 A 3 2 1 Pin number 2,75 ` 0,1 5,5 ` 0,1 13,5 `0,1 16,25 `0,1 19 `0,1 Notes: 1) potrusion may add 0.2 mm max. on each side 2) additional max. 0.05 mm per side by punching misalignement or overlap of dam bar or bending compression 3) DCB area 10 to 50 µm convex; position of DCB area in relation to plastic rim: ±25 µm (measured 2 mm from Cu rim) 4) terminal plating: 0.2 - 1 µm Ni + 10 - 25 µm Sn (gal v.) cutting edges may be partially free of plating 7 BD 9 VDD 1 FWD 3 2 8 IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20120618 IXA20RG1200DHGLB tentative Boost IGBT 30 30 25 VGE = 15 V 17 V 19 V 25 20 IC IC 15 [A] TVJ = 25°C [A] 10 30 13 V VGE = 15 V 11 V 25 20 20 IC 15 9V 10 TVJ = 125°C 15 [A] 10 TVJ = 125°C 5 TVJ = 125°C 5 5 TVJ = 25°C 0 0 0 1 2 3 0 0 1 2 3 4 5 5 6 7 8 Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 20 2.8 RG = 56 VCE = 600 V VGE = ±15 V TVJ = 125°C 3 VGE Eon 2.4 Eoff E 10 2 [V] 10 11 12 13 Fig. 3 Typ. tranfer characteristics 4 IC = 15 A VCE = 600 V 15 9 VGE [V] VCE [V] VCE [V] E [mJ] IC = 15 A VCE = 600 V VGE = ±15 V TVJ = 125°C 2.0 [mJ] Eoff 5 1 0 1.6 0 0 10 20 30 40 50 60 0 4 8 12 16 20 24 28 32 QG [nC] IC [A] Fig. 4 Typ. turn-on gate charge Fig. 5 Typ. switching energy versus collector current Eon 1.2 40 60 80 100 120 140 160 RG [W] Fig. 6 Typ. switching energy versus gate resistance 1 ZthJC 0.1 [K/W] 0.01 0.001 0.01 0.1 1 10 tp [s] Fig. 7 Typ. transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20120618 IXA20RG1200DHGLB tentative Boost Diode BD 40 5 35 TVJ = 125°C 30 VR = 600 V 30 4 20 3 20 A TVJ = 125°C 10 2 TVJ = 25°C 10 A [A] 15 [μC] 10 20 A IRR 20 Qrr [A] VR = 600 V 25 40 A IF 40 A TVJ = 125°C 10 A 5 0 0.0 0.5 1.0 1.5 2.0 2.5 1 200 3.0 300 VF [V] 400 500 600 0 200 700 300 diF /dt [A/μs] Fig. 2 Typ. reverse recov. charge Qrr versus di/dt Fig. 1 Typ. Forward current versus VF 400 500 600 700 diF /dt [A/μs] Fig. 3 Typ. peak reverse current IRM versus di/dt 1.4 700 TVJ = 125°C TVJ = 125°C 600 VR = 600 V 1.2 VR = 600 V 500 trr [ns] 1.0 400 Erec 40 A 300 20 A 0.6 10 A 0.4 100 0 200 300 400 500 600 700 diF /dt [A/μs] Fig. 4 Dynamic parameters Qrr, IRM versus di/dt 0.8 [mJ] 20 A 10 A 200 40 A 0.2 200 300 400 500 600 700 diF /dt [A/μs] Fig. 5 Typ. recovery time trr versus di/dt Fig. 6 Typ. recovery energy Erec versus di/dt 2 1 ZthJC 0.1 [K/W] 0.01 0.001 0.01 0.1 1 10 tp [s] Fig. 7 Typ. transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20120618 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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