IXA30PG1200DHGLB

IXA 30PG1200DHGLB Advanced Technical Information XPT IGBT phaseleg IC25 = 43 A = 1200 V VCES VCE(sat) typ = 1.9 V ISOPLUS™ Surface Mount Power Device 7 D3 6 D1 S1 4 5 7 D4 9 1 D2 3 S2 Iso la to ted he su at rfa sin ce k 8 9 4 6 5 2 1 3 2 E72873 8 Features IGBTs S1, S2 Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC80 TC = 25°C TC = 80°C ICM VCEK VGE = 15 V; RG = 39 W; TVJ = 125°C RBSOA, clamped inductive load; L = 100 µH tSC (SCSOA) VCE = 900 V; VGE = ±15 V; RG = 39 W; TVJ = 125°C none repetitive Ptot TC = 25°C Symbol Conditions 1200 V ±20 V 43 30 A A 75 VCES A 10 µs 150 W Characteristic Values (TVJ = 25°C, unless otherwise specified) min. VCE(sat) IC = 25 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 1 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES VCE = 0 V ; VGE = ± 20 V td(on) tr td(off) tf Eon Eoff E(rec)off typ. max. 1.9 2.2 2.2 V V 6.5 V 2.1 mA µA 500 nA 5.4 200 Inductive load; TVJ = 125°C VCE = 600 V; IC = 25 A VGE = ±15 V; RG = 39 W 70 40 250 100 2.5 3.0 tbd ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 25 A tbd 76 pF nC RthJC RthJH with heatsink compound (IXYS test setup) 0.95 IXYS reserves the right to change limits, test conditions and dimensions. © 2012 IXYS All rights reserved 0.85 1.3 • XPT IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits • Sonic™ diode - fast reverse recovery - low operating forward voltage - low leakage current • VCEsat detection diode - integrated into package - very fast diode • Package - isolated back surface - low coupling capacity between pins and heatsink - PCB space saving - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability Applications • Phaseleg - buck-boost chopper • Full bridge - power supplies - induction heating - four quadrant DC drives - controlled rectifier • Three phase bridge - AC drives - controlled rectifier K/W K/W 20120131b 1-5 IXA 30PG1200DHGLB Advanced Technical Information Diodes D1, D2 Symbol Conditions IF25 IF80 TC = 25°C TC = 80°C Symbol Conditions Equivalent Circuits for Simulation Maximum Ratings 40 27 A A Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VF IF = 20 A TVJ = 25°C TVJ = 125°C IRM trr Erec IF = 20 A; RG = 39 W; TVJ = 125°C VR = 600 V; VGE = -15 V RthJC RthJH per diode with heatsink compound (IXYS test setup) 1.9 1.9 2.4 30 350 0.85 1.2 V V A ns mJ 0.9 1.5 Conduction I V0 R0 IGBTs (typ. at VGE = 15 V; TJ = 125°C) S1, S2 V0 = 1.1 V; R0 = 60 mW Diodes (typ. at TJ = 125°C) D1, D2 V0 = 1.3 V; R0 = 28 mW K/W K/W Diodes D3, D4 Symbol Conditions VR TC = 25°C to 150°C Symbol Conditions Maximum Ratings 1200 V Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VF IF = 1 A TVJ = 25°C TVJ = 125°C 1.7 1.5 IR VR = 1200 V TVJ = 25°C TVJ = 125°C IRM trr IF = 1 A; diF /dt = -100 A/µs; TVJ = 25°C VR = 100 V; VGE = 0 V 2.2 V V 2 30 µA µA 2.3 40 A ns Component Symbol Conditions Maximum Ratings TVJ Tstg VISOL IISOL < 1 mA; 50/60 Hz FC mounting force Symbol Conditions CP coupling capacity between shorted pins and backside metal dS, dA dS, dA pin - pin pin - backside metal -55...+150 -55...+125 °C °C 2500 V~ 40 ... 130 N Characteristic Values min. typ. max. 90 pF 1.65 4 CTI mm mm 400 Weight 8 g Ordering Ordering Name Marking on Product Delivering Base Ordering Mode Qty Code Standard IXA30PG1200DHGLB-TRR IXA30PG1200DHGLB Tape&Reel IXYS reserves the right to change limits, test conditions and dimensions. © 2012 IXYS All rights reserved 200 511846 20120131b 2-5 IXA 30PG1200DHGLB Advanced Technical Information 5,5 ±0,1 Dimensions in mm (1 mm = 0.0394“) (6x) 1 ±0,05 2) 0 +0,15 2°  0,1 A (8 : 1) 0,5 ±0,1 seating plane 18 ±0,1 4 ±0,05 (3x) 2 ±0,05 2) 0,55 ±0,1 32,7 ±0,5 23 ±0,2 2 ±0,2 9 ±0,1 4,85 ±0,2 25 ±0,2 1) A 3)  0,05 2,75 ±0,1 5,5 ±0,1 13,5 ±0,1 16,25 ±0,1 19 ±0,1 Notes: 1) potrusion may add 0.2 mm max. on each side 2) additional max. 0.05 mm per side by punching misalignement or overlap of dam bar or bending compression 3) DCB area 10 to 50 µm convex; position of DCB area in relation to plastic rim: ±25 µm (measured 2 mm from Cu rim) 4) terminal plating: 0.2 - 1 µm Ni + 10 - 25 µm Sn (gal v.) cutting edges may be partially free of plating IXYS reserves the right to change limits, test conditions and dimensions. © 2012 IXYS All rights reserved 20120131b 3-5 IXA 30PG1200DHGLB Advanced Technical Information 50 50 VGE = 15 V 40 40 30 TVJ = 25°C IC IC TVJ = 125°C [A] 20 30 TVJ = 125°C 0 1 2 0 3 VCE [V] 0 1 2 4 5 80 100 20 IC = 25 A VCE = 600 V 40 15 IC 30 VGE 10 [V] 20 TVJ = 125°C 10 5 TVJ = 25°C 5 6 7 8 9 10 11 12 0 13 0 20 40 Fig. 4 Typ. turn-on gate charge Fig. 3 Typ. tranfer characteristics 6 4.0 Eon RG = 39 Ω VCE = 600 V VGE = ±15 V TVJ = 125°C 5 60 QG [nC] VGE [V] E 3 VCE [V] Fig. 2 Typ. output characteristics 50 0 9V 10 Fig. 1 Typ. output characteristics [A] 11 V [A] 20 10 0 13 V VGE = 15 V 17 V 19 V 3.5 3.0 Eoff 4 2.5 E [mJ] 3 [mJ] Eoff Eon IC = 25 A VCE = 600 V VGE = ±15 V TVJ = 125°C 2.0 1.5 2 1.0 1 0 0.5 0 10 20 30 40 50 IC [A] Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, test conditions and dimensions. © 2012 IXYS All rights reserved 0.0 20 40 60 80 100 120 140 160 RG [Ω] Fig. 6 Typ. switching energy vs. gate resistance 20120131b 4-5 Advanced Technical Information 60 7 50 6 40 5 IXA 30PG1200DHGLB TVJ = 125°C IF Qrr 30 [A] 4 60 A 30 A [µC] 20 3 TVJ = 125°C 15 A TVJ = 25°C 10 0 0.0 0.5 1.0 2 1.5 VF [V] 2.0 2.5 1 300 400 500 600 700 800 900 1000 1100 diF /dt [A/µs] 3.0 Fig. 1 7 Typ. Forward current versus VF Fig. 8 2 Typ. reverse recov.charge Qrr vs. di/dt 70 60 700 TVJ = 125°C 60 A 600 VR = 600 V 50 IRRM VR = 600 V 500 30 A trr 40 TVJ = 125°C VR = 600 V 400 15 A [A] 30 [ns] 300 20 200 10 100 0 300 400 500 600 700 800 900 1000 1100 diF /dt [A/µs] Fig. 9 3 Typ. peak reverse current IRM vs. di/dt 2.0 1.6 15 A 0 300 400 500 600 700 800 900 1000 1100 diF /dt [A/µs] Fig.10 4 Typ. recovery time trr versus di/dt TVJ = 125°C VR = 600 V 60 A 30 A Erec 1.2 [mJ] 60 A 30 A 0.8 15 A 0.4 0.0 300 400 500 600 700 800 900 1000 1100 diF /dt [A/µs] Fig. 11 5 Typ. recovery energy Erec versus di/dt IXYS reserves the right to change limits, test conditions and dimensions. © 2012 IXYS All rights reserved 20120131b 5-5 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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