IXA30RG1200DHGLB-TRR 数据手册
IXA30RG1200DHGLB
tentative
XPT IGBT
VCES
=
1200 V
I C25
=
43 A
VCE(sat) =
1.8 V
ISOPLUS™ Surface Mount Power Device
Boost Topology
XPT IGBT
Part number
IXA30RG1200DHGLB
Backside: isolated
7
BD
9
VDD
1
FWD
3
2
8
Features / Advantages:
Applications:
Package: SMPD
● XPT IGBT
- low saturation voltage
- positive temperature coefficient
for easy paralleling
- fast switching
- short tail current for optimized
performance in resonant circuits
● Sonic™ diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
- low temperature dependency of
reverse recovery
● Vcesat detection diode (VDD)
- integrated into package
- very fast diode
● AC drives
- brake chopper
● PFC
- boost chopper
● Switched reluctance drives
● Industry convenient outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Soldering pins for PCB mounting
● Backside: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: 3000 V~
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20120618
IXA30RG1200DHGLB
tentative
Ratings
Free Wheeling Diode FWD
Conditions
Symbol
VRSM
Definition
max. non-repetitive reverse blocking voltage
TVJ = 25°C
max.
1200
Unit
V
VRRM
max. repetitive reverse blocking voltage
TVJ = 25°C
1200
V
IR
reverse current, drain current
VF
forward voltage drop
I FAV
average forward current
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
min.
VR = 1200 V
TVJ = 25°C
30
µA
VR = 1200 V
TVJ = 125°C
0.5
mA
TVJ = 25°C
2.20
V
IF =
30 A
IF =
60 A
IF =
30 A
IF =
60 A
V
TVJ = 125°C
2.20
T VJ = 150 °C
25
A
TVJ = 150 °C
1.26
V
d = 0.5
for power loss calculation only
R thCH
thermal resistance case to heatsink
Ptot
total power dissipation
I FSM
max. forward surge current
t = 10 ms; (50 Hz), sine; VR = 0 V
TVJ = 45°C
CJ
junction capacitance
VR = 400 V f = 1 MHz
TVJ = 25°C
reverse current, drain current
VF0
threshold voltage
rF
slope resistance
CJ
I RM
junction capacitance
t rr
200
© 2012 IXYS all rights reserved
A
pF
min.
typ.
max.
1200
Unit
V
VR/D = 1200 V
TVJ = 25°C
2
µA
TVJ = 125 °C
0.03
mA
IF = 1 A
TVJ = 25°C
2.20
V
IF = 1 A
TVJ = 125 °C
1.80
V
TVJ = 150 °C
1.30
V
390
mΩ
VR = 400 V; f = 1 MHz
TVJ = 25°C
tbd
pF
TVJ = 25 °C
2.3
A
VR = 100 V; I F = 1 A
TVJ = 125°C
tbd
A
max. reverse recovery current
IXYS reserves the right to change limits, conditions and dimensions.
W
VR/D = 1200 V
for power loss calculation only
reverse recovery time
K/W
13
TVJ = 25°C
max. repetitive reverse blocking voltage
forward voltage drop
K/W
Ratings
Conditions
IR
mΩ
1
125
VCEsat Detection Diode VDD
Definition
28
0.30
TC = 25°C
Symbol
VRRM
V
V
TC = 80°C
rectangular
VF
typ.
-di/dt = 100 A/µs
TVJ = 25 °C
40
ns
TVJ = 125°C
tbd
ns
Data according to IEC 60747and per semiconductor unless otherwise specified
20120618
IXA30RG1200DHGLB
tentative
Ratings
Boost IGBT
Symbol
VCES
collector emitter voltage
Definition
VGES
Conditions
min.
max.
1200
Unit
V
max. DC gate voltage
±20
V
VGEM
max. transient collector gate voltage
±30
V
I C25
collector current
TVJ =
I C80
Ptot
total power dissipation
VCE(sat)
collector emitter saturation voltage
VGE(th)
gate emitter threshold voltage
IC = 1
I CES
collector emitter leakage current
VCE = VCES; VGE = 0 V
I GES
gate emitter leakage current
VGE = ±20 V
Q G(on)
total gate charge
VCE = 600 V; VGE = 15 V; IC = 25 A
t d(on)
turn-on delay time
TC = 25°C
43
A
TC = 80 °C
30
A
147
W
2.1
V
TC = 25°C
I C = 25 A; VGE = 15 V
mA; VGE = VCE
TVJ = 25°C
1.8
TVJ = 125°C
2.1
TVJ = 25°C
current rise time
t d(off)
turn-off delay time
tf
current fall time
Eon
turn-on energy per pulse
Eoff
turn-off energy per pulse
RBSOA
reverse bias safe operating area
I CM
inductive load
5.9
TVJ = 125°C
VGE = ±15 V; R G = 39 Ω
short circuit safe operating area
VCEmax = 1200 V
t SC
short circuit duration
VCE = 900 V; VGE = ±15 V
I SC
short circuit current
R G = 39 Ω; non-repetitive
R thJC
thermal resistance junction to case
R thCH
thermal resistance case to heatsink
6.5
V
0.1
mA
mA
0.1
nA
76
nC
70
ns
40
ns
250
ns
100
ns
2.5
mJ
3
mJ
TVJ = 125°C
VCEmax = 1200 V
SCSOA
V
500
VCE = 600 V; IC = 25 A
VGE = ±15 V; R G = 39 Ω
5.4
TVJ = 25°C
TVJ = 125°C
tr
typ.
25°C
TVJ = 125°C
75
A
10
µs
A
100
0.85 K/W
K/W
0.25
Boost Diode BD
VRRM
max. repetitive reverse voltage
TVJ = 25°C
1200
V
I F25
forward current
TC = 25°C
48
A
TC = 80 °C
32
A
2.20
V
I F 80
VF
forward voltage
I F = 30 A
TVJ = 25°C
TVJ = 125°C
IR
reverse current
VR = VRRM
Q rr
reverse recovery charge
I RM
max. reverse recovery current
t rr
reverse recovery time
E rec
reverse recovery energy
R thJC
thermal resistance junction to case
R thCH
thermal resistance case to heatsink
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
VR = 600 V
-di F /dt = 600 A/µs
IF = 30 A; VGE = 0 V
0.03
TVJ = 25°C
TVJ = 125°C
TVJ = 125°C
V
1.90
mA
0.15
mA
3.5
µC
30
A
350
ns
0.9
mJ
1 K/W
0.3
Data according to IEC 60747and per semiconductor unless otherwise specified
K/W
20120618
IXA30RG1200DHGLB
tentative
Package
Ratings
SMPD
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
Tstg
storage temperature
T VJ
virtual junction temperature
min.
typ.
max.
100
Unit
A
-55
150
°C
-55
150
°C
Weight
FC
8.5
40
mounting force with clip
VISOL
t = 1 second
isolation voltage
t = 1 minute
d Spp/App
d Spb/Apb
UL Logo
~
Assembly line
I
X
A
30
RG
1200
D
H
G
LB
XXXXXXXXXX
yywwA
Data Matrix Code
Digits
1 to 19:
20 to 23:
24 to 25:
26 to 31:
32:
33 to 36:
Part #
Date Code
Assembly line
Lot #
Split Lot
Individual #
N
V
2500
V
terminal to terminal
1.6
mm
terminal to backside
4.0
mm
Part number
~
Backside DCB
Part number
Date code
130
3000
50/60 Hz, RMS; IISOL ≤ 1 mA
creepage distance on surface | striking distance through air
~
g
=
=
=
=
=
=
=
=
=
=
IGBT
XPT IGBT
Gen 1 / std
Current Rating [A]
boost configuration
Reverse Voltage [V]
IGBT
XPT IGBT
Gen 1 / std
SMPD-B
Pin 1 identifier
Ordering
Standard
Alternative
Part Number
IXA30RG1200DHGLB
IXA30RG1200DHGLB-TRR
Similar Part
IXA20RG1200DHGLB
IXA40RG1200DHGLB
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Marking on Product
IXA30RG1200DHGLB
IXA30RG1200DHGLB
Package
SMPD-B
SMPD-B
Delivery Mode
Blister
Tape & Reel
Quantity
45
200
Code No.
512356
511654
Voltage class
1200
1200
Data according to IEC 60747and per semiconductor unless otherwise specified
20120618
IXA30RG1200DHGLB
tentative
Outlines SMPD
A(8:1)
2)
5,5 ` 0,1
(6x) 1 `0,05
0 + 0,15
2°
c 0,1
0,5 ` 0,1
1)
18 `0,1
seating plane
(3x) 2 ` 0,05
9 ` 0,1
2)
4 ` 0,05
8
9
23 ` 0,2
32,7 `0,5
2 `0,2
7
0,55 ` 0,1
4,85 ` 0,2
25 `0,2
3)
c 0,05
6 5 4
A
3 2 1
Pin number
2,75 ` 0,1
5,5 ` 0,1
13,5 `0,1
16,25 `0,1
19 `0,1
Notes:
1) potrusion may add 0.2 mm max. on each side
2) additional max. 0.05 mm per side by punching misalignement
or overlap of dam bar or bending compression
3) DCB area 10 to 50 µm convex;
position of DCB area in relation to plastic rim: ±25 µm
(measured 2 mm from Cu rim)
4) terminal plating: 0.2 - 1 µm Ni + 10 - 25 µm Sn (gal v.)
cutting edges may be partially free of plating
7
BD
9
VDD
1
FWD
3
2
8
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20120618
IXA30RG1200DHGLB
tentative
Boost IGBT
50
50
VGE = 15 V
40
IC
40
30
50
13 V
VGE = 15 V
17 V
19 V
11 V
40
IC 30
TVJ = 25°C
TVJ = 125°C
[A] 20
IC
[A] 20
30
[A] 20
9V
10
10
TVJ = 125°C
10
TVJ = 25°C
TVJ = 125°C
0
0
0
1
2
3
0
0
1
3
4
5
5
Eon
RG = 39
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
5
3.5
E
[V]
10 11 12 13
IC =
25 A
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
Eoff
4
10
9
Fig. 3 Typ. tranfer characteristics
4.0
VGE
8
Fig. 2 Typ. output characteristics
6
15
7
VGE [V]
20
IC = 25 A
VCE = 600 V
6
VCE [V]
VCE [V]
Fig. 1 Typ. output characteristics
2
E
3
3.0
Eoff
[mJ]
[mJ]
2
5
2.5
1
0
0
0
20
40
60
80
100
QG [nC]
Fig. 4 Typ. turn-on gate charge
0
10
20
30
40
50
IC [A]
Fig. 5 Typ. switching energy
versus collector current
Eon
2.0
20
40
60
80 100 120 140 160
RG [W]
Fig. 6 Typ. switching energy
versus gate resistance
Fig. 7 Typ. transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20120618
IXA30RG1200DHGLB
tentative
Boost Diode BD
60
70
6
TVJ = 125°C
50
VR = 600 V
60
60 A
5
40
60 A
50
Qrr
IF
4
30 A
30 A
30
40
[μC] 3
[A]
20
30
15 A
TVJ = 125°C
TVJ = 25°C
10
15 A
[A]
2
20
TVJ = 125°C
VR = 600 V
0
0.0
0.5
1.0
1.5
2.0
2.5
1
400
3.0
VF [V]
Fig. 1 Typ. Forward current
versus VF
600
800
10
400
1000
600
800
1000
diF /dt [A/μs]
diF /dt [A/μs]
Fig. 2 Typ. reverse recov.charge
Qrr versus di/dt
Fig. 3 Typ. peak reverse current
IRM versus di/dt
700
1.6
60 A
VR = 600 V
TVJ = 125°C
600
TVJ = 125°C
1.4
VR = 600 V
500
30 A
1.2
trr
Erec
400
[ns]
1.0
[mJ]
300
0.8
60 A
30 A
200
15 A
100
400
600
800
1000
diF /dt [A/μs]
Fig. 4 Dynamic parameters
Qrr, IRM versus di/dt
Fig. 5 Typ. recovery time
trr versus di/dt
15 A
0.6
0.4
400
600
800
1000
diF /dt [A/μs]
Fig. 6 Typ. recovery energy
Erec versus di/dt
Fig. 7 Typ. transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20120618
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
IXA30RG1200DHGLB-TRR 价格&库存
很抱歉,暂时无法提供与“IXA30RG1200DHGLB-TRR”相匹配的价格&库存,您可以联系我们找货
免费人工找货