IXA40RG1200DHGLB-TRR

IXA 40PG1200DHGLB Advanced Technical Information XPT IGBT phaseleg IC25 = 63 A = 1200 V VCES VCE(sat) typ = 1.85 V ISOPLUS™ Surface Mount Power Device 7 D3 6 D1 S1 4 5 7 D4 9 1 D2 3 S2 Iso la to ted he su at rfa sin ce k 8 9 4 6 5 2 1 3 2 E72873 8 Features IGBTs S1, S2 Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES 1200 V ±20 V 63 45 A A 105 VCES A 10 µs W IC25 IC80 TC = 25°C TC = 80°C ICM VCEK VGE = 15 V; RG = 27 W; TVJ = 125°C RBSOA, clamped inductive load; L = 100 µH tSC (SCSOA) VCE = 900 V; VGE = ±15 V; RG = 27 W; TVJ = 125°C none repetitive Ptot TVJ = 25°C 230 Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. VCE(sat) IC = 35 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 1.5 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES VCE = 0 V ; VGE = ± 20 V td(on) tr td(off) tf Eon Eoff typ. max. 1.85 2.2 2.15 V V 6.5 V 0.15 mA mA 200 nA 5.4 0.25 Inductive load; TVJ = 125°C VCE = 600 V; IC = 35 A VGE = ±15 V; RG = 27 W 70 40 250 100 3.8 4.1 ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 35 A tbd 107 pF nC RthJC RthJH with heatsink compound (IXYS test setup) 0.75 IXYS reserves the right to change limits, test conditions and dimensions. © 2012 IXYS All rights reserved 0.55 0.95 • XPT IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits • SonicTM diode - fast reverse recovery - low operating forward voltage - low leakage current • VCEsat detection diode - integrated into package - very fast diode • Package - isolated back surface - low coupling capacity between pins and heatsink - PCB space saving - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability Applications • Phaseleg - buck-boost chopper • Full bridge - power supplies - induction heating - four quadrant DC drives - controlled rectifier • Three phase bridge - AC drives - controlled rectifier K/W K/W 20120131b 1-3 IXA 40PG1200DHGLB Advanced Technical Information Diodes D1, D2 Equivalent Circuits for Simulation Symbol Conditions IF25 IF80 TC = 25°C TC = 80°C Symbol Conditions Maximum Ratings 40 27 A A Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VF IRM trr Erec RthJC RthJH IF = 35 A 2.1 2.1 TVJ = 25°C TVJ = 125°C IF = 35 A; RG = 27 W; TVJ = 125°C VR = 600 V; VGE = -15 V 30 350 tbd per diode with heatsink compound (IXYS test setup) 1.2 2.4 V V A ns mJ 0.9 1.5 Conduction I V0 R0 IGBTs (typ. at VGE = 15 V; TJ = 125°C) S1, S2 V0 = 1.1 V; R0 = 40 mW Diodes (typ. at TJ = 125°C) D1, D2 V0 = 1.3 V; R0 = 28 mW K/W K/W Diodes D3, D4 Symbol Conditions VR TC = 25°C to 150°C Symbol Conditions Maximum Ratings 1200 V Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VF IF = 1 A TVJ = 25°C TVJ = 125°C 1.7 1.5 IR VR = 1200 V TVJ = 25°C TVJ = 125°C IRM trr IF = 1 A; diF /dt = -100 A/µs; TVJ = 25°C VR = 100 V; VGE = 0 V 2.2 V V 2 30 µA µA 2.3 40 A ns Component Symbol Conditions Maximum Ratings TVJ Tstg VISOL IISOL < 1 mA; 50/60 Hz FC mounting force Symbol Conditions -55...+150 -55...+125 °C °C 2500 V~ 40 ... 130 N Characteristic Values min. CP coupling capacity between shorted pins and backside metal dS, dA dS, dA pin - pin pin - backside metal typ. max. 90 1.65 4 CTI pF mm mm 400 Weight 8 Ordering Ordering Name Standard IXA 40PG1200DHGLB Marking on Product Delivering Base Ordering Mode Qty Code IXA40PG1200DHGLB Tape&Reel 200 IXYS reserves the right to change limits, test conditions and dimensions. © 2012 IXYS All rights reserved g tbd 20120131b 2-3 IXA 40PG1200DHGLB Advanced Technical Information (6x) 1 ±0,05 2) 5,5 ±0,1 Dimensions in mm (1 mm = 0.0394“) 0 +0,15 2°  0,1 A (8 : 1) 25 ±0,2 1) seating plane 18 ±0,1 4 ±0,05 (3x) 2 ±0,05 2) 0,55 ±0,1 32,7 ±0,5 23 ±0,2 2 ±0,2 9 ±0,1 4,85 ±0,2 0,5 ±0,1 A 3)  0,05 2,75 ±0,1 5,5 ±0,1 13,5 ±0,1 16,25 ±0,1 19 ±0,1 Notes: 1) potrusion may add 0.2 mm max. on each side 2) additional max. 0.05 mm per side by punching misalignement or overlap of dam bar or bending compression 3) DCB area 10 to 50 µm convex; position of DCB area in relation to plastic rim: ±25 µm (measured 2 mm from Cu rim) 4) terminal plating: 0.2 - 1 µm Ni + 10 - 25 µm Sn (gal v.) cutting edges may be partially free of plating IXYS reserves the right to change limits, test conditions and dimensions. © 2012 IXYS All rights reserved 20120131b 3-3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.