IXA4I1200UC-TRL

IXA4I1200UC preliminary XPT IGBT VCES = 1200 V I C25 = 9A VCE(sat) = 1.8 V Single IGBT Part number IXA4I1200UC Marking on Product: X4TAU Backside: collector (C) 2+4 (G) 1 (E) 3 Features / Advantages: Applications: Package: TO-252 (DPak) ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic ● Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) ● AC motor drives ● Solar inverter ● Medical equipment ● Uninterruptible power supply ● Air-conditioning systems ● Welding equipment ● Switched-mode and resonant-mode power supplies ● Inductive heating, cookers ● Pumps, Fans ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20120917 IXA4I1200UC preliminary Ratings IGBT Symbol VCES Definition collector emitter voltage VGES max. DC gate voltage VGEM max. transient gate emitter voltage I C25 collector current Conditions min. TVJ = 25°C TC = 25°C I C100 V 6.5 V 0.1 mA gate emitter threshold voltage I C = 0.1 mA; VGE = VCE TVJ = 25°C I CES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C 1.8 TVJ = 125 °C t d(on) turn-on delay time tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area 5.4 5.9 3A TVJ = 125 °C 600 V; IC = 3A VGE = ±15 V; R G = 330 Ω VGE = ±15 V; R G = 330 Ω short circuit safe operating area VCEmax = 900 V t SC short circuit duration VCE = 900 V; VGE = ±15 V R G = 330 Ω; non-repetitive I SC R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink nA 12 nC 70 ns 40 ns 250 ns 100 ns 0.4 mJ 0.3 mJ TVJ = 125 °C VCEmax = 1200 V SCSOA short circuit current mA 0.1 500 inductive load VCE = V 2.1 TVJ = 125 °C VCE = 600 V; VGE = 15 V; IC = A 2.1 VGE(th) VGE = ±20 V V 9 A TVJ = 25°C total gate charge ±30 W IC = gate emitter leakage current V 5 collector emitter saturation voltage Q G(on) ±20 45 VCE(sat) I GES Unit V TC = 25°C total power dissipation 3 A; VGE = 15 V max. 1200 TC = 100 °C Ptot I CM typ. TVJ = 125 °C 9 A 10 µs A 12 2.7 K/W K/W 0.50 Diode VRRM max. repetitive reverse voltage TVJ = 25°C 1200 V I F25 forward current TC = 25°C tbd A TC = 100 °C tbd A TVJ = 25°C tbd V * mA I F 100 3A VF forward voltage IF = IR reverse current VR = VRRM TVJ = 125°C TVJ = 25°C * not applicable, see Ices value above V tbd * mA tbd µC tbd A TVJ = 125°C Q rr reverse recovery charge I RM max. reverse recovery current t rr reverse recovery time E rec reverse recovery energy R thJC thermal resistance junction to case tbd K/W R thCH thermal resistance case to heatsink K/W IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved VR = 600 V -di F /dt = IF = A/µs 3 A; VGE = 0 V TVJ = 125°C tbd ns tbd mJ Data according to IEC 60747and per semiconductor unless otherwise specified 20120917 IXA4I1200UC preliminary Package Ratings TO-252 (DPak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 20 Unit A -40 150 °C -40 125 °C 150 °C Weight FC 0.3 20 mounting force with clip Product Marking Part number Assembly Line I X A 4 I 1200 UC abcdefg Z YY 60 N Part number IXYS Logo g = = = = = = = IGBT XPT IGBT Gen 1 / std Current Rating [A] Single IGBT Reverse Voltage [V] TO-252AA (DPak) WW Date Code Ordering Standard Part Number IXA4I1200UC Equivalent Circuits for Simulation I V0 R0 Marking on Product X4TAU Delivery Mode IGBT threshold voltage 1.1 V R 0 max slope resistance * 460 mΩ © 2012 IXYS all rights reserved Code No. T VJ = 150 °C * on die level V 0 max IXYS reserves the right to change limits, conditions and dimensions. Quantity Data according to IEC 60747and per semiconductor unless otherwise specified 20120917 IXA4I1200UC preliminary Outlines TO-252 (DPak) (C) 2+4 (G) 1 (E) 3 IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20120917