IXA60IF1200NA

IXA60IF1200NA XPT IGBT VCES = 1200 V I C25 = 88 A VCE(sat) = 1.8 V Copack Part number IXA60IF1200NA Backside: isolated C (3) (G) 2 E (1+4) Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic ● Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) ● SONIC™ diode - fast and soft reverse recovery - low operating forward voltage ● AC motor drives ● Solar inverter ● Medical equipment ● Uninterruptible power supply ● Air-conditioning systems ● Welding equipment ● Switched-mode and resonant-mode power supplies ● Inductive heating, cookers ● Pumps, Fans ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Base plate: Copper internally DCB isolated ● Advanced power cycling ● Either emitter terminal can be used as main or Kelvin emitter IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20140708a IXA60IF1200NA Ratings IGBT Symbol VCES Definition collector emitter voltage VGES max. DC gate voltage VGEM max. transient gate emitter voltage I C25 collector current Conditions min. TVJ = 25°C TC = 25°C I C80 Ptot total power dissipation VCE(sat) collector emitter saturation voltage IC = 50 A; VGE = 15 V VGE(th) gate emitter threshold voltage IC = 2 mA; VGE = VCE I CES collector emitter leakage current VCE = VCES; VGE = 0 V gate emitter leakage current VGE = ±20 V total gate charge VCE = 600 V; VGE = 15 V; IC = t d(on) turn-on delay time tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area 600 V; IC = 2.1 V 6.5 V 0.1 mA TVJ = 25°C TVJ = 25°C 50 A VGE = ±15 V; R G = 15 Ω VGE = ±15 V; R G = 15 Ω VCEmax = 1200 V t SC short circuit duration VCE = 900 V; VGE = ±15 V R G = 15 Ω; non-repetitive thermal resistance junction to case R thCH thermal resistance case to heatsink A A 1.8 V 2.1 5.4 5.9 mA 0.1 nA 190 nC 70 ns 40 ns 250 ns 100 ns 4.5 mJ 5.5 mJ TVJ = 125 °C VCEmax = 1200 V I SC V 88 W 50 A short circuit safe operating area R thJC ±30 56 TVJ = 125 °C SCSOA short circuit current V 500 inductive load VCE = ±20 290 TVJ = 125 °C Q G(on) Unit V TC = 25°C TVJ = 25°C I GES max. 1200 TC = 80 °C TVJ = 125 °C I CM typ. TVJ = 125 °C 150 A 10 µs A 200 0.43 K/W K/W 0.10 Diode VRRM max. repetitive reverse voltage TVJ = 25°C 1200 V I F25 forward current TC = 25°C 85 A TC = 80 °C 51 A TVJ = 25°C 2.20 V * mA I F 80 60 A VF forward voltage IF = IR reverse current VR = VRRM TVJ = 125°C * not applicable, see Ices at IGBT Q rr reverse recovery charge I RM max. reverse recovery current t rr reverse recovery time E rec reverse recovery energy R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved TVJ = 25°C * mA 8 µC 60 A TVJ = 125°C VR = 600 V -di F /dt = E+03 A/µs IF = 60 A; VGE = 0 V TVJ = 125°C V 1.95 350 ns 2.5 mJ 0.6 K/W 0.10 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20140708a IXA60IF1200NA Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 150 Unit A -40 150 °C -40 125 °C 150 °C 1) Weight 30 g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm d Spp/App d Spb/Apb VISOL 8.6 50/60 Hz, RMS; IISOL ≤ 1 mA 3.2 mm 6.8 mm 3000 V 2500 V IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. Part description Product Marking I X A 60 IF 1200 NA Part No. Logo XXXXX ® Zyyww abcd Assembly Line DateCode Ordering Standard Ordering Number IXA60IF1200NA Equivalent Circuits for Simulation V0 = = = = = = = IGBT XPT IGBT Gen 1 / std Current Rating [A] Copack Reverse Voltage [V] SOT-227B (minibloc) Assembly Code Similar Part IXA70I1200NA I 10.5 t = 1 second isolation voltage t = 1 minute 1) terminal to terminal terminal to backside creepage distance on surface | striking distance through air R0 Marking on Product IXA60IF1200NA Package SOT-227B (minibloc) Delivery Mode Tube T VJ = 150 °C * on die level IGBT Diode threshold voltage 1.1 1.25 V R 0 max slope resistance * 28 14.2 mΩ © 2014 IXYS all rights reserved Code No. 508765 Voltage class 1200 V 0 max IXYS reserves the right to change limits, conditions and dimensions. Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20140708a IXA60IF1200NA Outlines SOT-227B (minibloc) C (3) (G) 2 E (1+4) IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20140708a IXA60IF1200NA IGBT 100 100 VGE = 15 V 80 13 V 80 60 60 TVJ = 25°C IC TVJ = 125°C IC TVJ = 125°C [A] 40 [A] 40 20 9V 20 0 0 0 1 2 3 0 1 2 VCE [V] 3 4 VCE [V] Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 100 20 IC = 50 A VCE = 600 V 80 15 IC 60 [A] 11 V VGE = 15 V 17 V 19 V VGE 10 [V] 40 5 TVJ = 125°C 20 TVJ = 25°C 0 0 5 6 7 8 9 10 11 12 0 13 40 80 160 200 240 QG [nC] VGE [V] Fig. 4 Typ. turn-on gate charge Fig. 3 Typ. tranfer characteristics 10 6.0 Eon RG = 15 VCE = 600 V VGE = ±15 V TVJ = 125°C 8 120 Eoff Eoff 5.5 6 E E 5.0 [mJ] [mJ] 4 IC = 50 A VCE = 600 V VGE = ±15 V TVJ = 125°C Eon 4.5 2 0 0 20 40 60 80 100 120 IC [A] Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved 4.0 12 16 20 24 28 32 RG [ ] Fig. 6 Typ. switching energy vs. gate resistance Data according to IEC 60747and per semiconductor unless otherwise specified 20140708a IXA60IF1200NA Diode 120 14 100 12 TVJ = 125°C VR = 600 V 120 A 10 80 IF Qrr 60 [A] 60 A 8 [µC] 6 40 30 A TVJ = 125°C 4 TVJ = 25°C 20 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 600 700 800 VF [V] 900 1000 Fig. 7 Typ. Forward current versus VF 1300 700 TVJ = 125°C 80 120 A TVJ = 125°C 600 VR = 600 V VR = 600 V 70 500 60 A 60 [A] 1200 Fig. 8 Typ. reverse recov.charge Qrr vs. di/dt 90 IRR 1100 diF /dt [A/µs] 30 A 50 trr 40 400 120 A 60 A [ns] 300 30 A 30 200 20 100 10 0 600 700 800 900 1000 1100 1200 0 600 1300 700 800 diF /dt [A/µs] 900 1000 1100 1300 diF /dt [A/µs] Fig. 9 Typ. peak reverse current IRM vs. di/dt Fig. 10 Typ. recovery time trr versus di/dt 4.0 1 TVJ = 125°C Diode 120 A VR = 600 V 3.2 IGBT 60 A Erec 2.4 [mJ] 1200 ZthJC 0.1 30 A 1.6 [K/W] 0.8 0.0 600 700 800 900 1000 1100 1200 1300 diF /dt [A/µs] Fig. 11 Typ. recovery energy Erec versus di/dt IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved 0.01 0.001 0.01 0.1 1 10 tp [s] Fig. 12 Typ. transient thermal impedance Data according to IEC 60747and per semiconductor unless otherwise specified 20140708a Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.