IXBF10N300C

Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF10N300C VCES = 3000V IC110 = 10A VCE(sat)  6.0V (Electrically Isolated Tab) ISOPLUS i4-PakTM mbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V VGES Continuous ± 20 V VGEM Transient ± 30 V 1 5 IC25 TC = 25°C 29 A IC110 TC = 110°C 10 A ICM TC = 25°C, 1ms 240 A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 10 Clamped Inductive Load ICM = 80 VCES  1500 A V TSC (SCSOA) VGE = 15V, TJ = 125°C, RG = 52, VCE = 1500V, Non-Repetitive 10 μs PC TC 240 W -55 ... +150 °C  TJM 150 °C  Tstg -55 ... +150 °C  300 260 °C °C 20..120 / 4.5..27 N/lb. 4000 V~ 5 g = 25°C TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s FC Mounting Force VISOL 50/60Hz, 5 Seconds Weight Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) IC = 250μA, VGE = 0V 3000 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = ± 20V VCE(sat) IC V Note 2, TJ = 125°C = 10A, VGE = 15V, Note 1 TJ = 125°C © 2013 IXYS CORPORATION, All Rights Reserved 4.6 4.8 1 = Gate 2 = Emitter Isolated Tab 5 = Collector Features   Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V~ Electrical Isolation High Blocking Voltage High Frequency Operation Advantages   Low Gate Drive Requirement High Power Density Applications Characteristic Values Min. Typ. Max. BVCES 2 5.0 V 25 3 μA mA ±200 nA 6.0 V V  Switch-Mode and Resonant-Mode Power Supplies DS100538(5/13) IXBF10N300C Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 13 IC = 10A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 10A, VGE = 15V, VCE = 1000V td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 10A, VGE = 15V VCE = 1500V, RG = 10 Note 2 Inductive load, TJ = 125°C IC = 10A, VGE = 15V VCE = 1500V, RG = 10 Note 2 RthJC RthCS ISOPLUS i4-PakTM (HV) Outline 22 S 4580 204 75 pF pF pF 208 23 80 nC nC nC 32 10 7.20 390 84 1.04 ns ns mJ ns ns mJ 28 16 6.15 450 165 1.40 ns ns mJ ns ns mJ 0.15 0.52 °C/W °C/W Pin 1 = Gate Pin2 = Emitter Pin 3 = Collector Tab 4 = Isolated Reverse Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max VF IF = 10A, VGE = 0V, Note 1 trr IF = 10A, VGE = 0V, -diF/dt = 100A/μs IRM QRM 5.0 VR = 100V, VGE = 0V V 700 ns 21 A 7.4 μC Notes: 1. Pulse test, t < 300s, duty cycle, d < 2%. 2. Device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXBF10N300C Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 20 200 VGE = 15V 9V VGE = 15V 180 7V 11V 160 15 IC - Amperes IC - Amperes 140 10 6V 9V 120 100 80 60 5 7V 40 20 5V 0 6V 0 0 1 2 3 4 5 6 7 0 5 10 15 VCE - Volts 25 30 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 20 1.4 VGE = 15V 11V 9V VGE = 15V 1.3 7V I VCE(sat) - Normalized 15 IC - Amperes 20 VCE - Volts 6V 10 5 C 1.1 1.0 I 0 C = 10A 0.9 0.8 5V = 20A 1.2 I C = 5A 0.7 0 1 2 3 4 5 6 7 -50 -25 0 25 VCE - Volts 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 45 10 40 TJ = 25ºC 9 35 IC - Amperes VCE - Volts 8 7 I 6 C = 20A 30 25 TJ = 125ºC 25ºC - 40ºC 20 15 5 10A 10 4 5 5A 0 3 5 6 7 8 9 10 11 12 VGE - Volts © 2013 IXYS CORPORATION, All Rights Reserved 13 14 15 4.0 4.5 5.0 5.5 6.0 VGE - Volts 6.5 7.0 7.5 IXBF10N300C Fig. 8. Gate Charge Fig. 7. Transconductance 16 55 50 TJ = - 40ºC 14 VCE = 1000V 12 I G = 10mA I C = 10A 45 25ºC 35 VGE - Volts g f s - Siemens 40 125ºC 30 25 10 8 6 20 15 4 10 2 5 0 0 0 10 20 30 40 50 0 20 40 60 IC - Amperes 100 120 140 160 180 200 220 QG - NanoCoulombs Fig. 10. Capacitance Fig. 9. Forward Voltage Drop of Intrinsic Diode 10,000 40 TJ = 25ºC 35 125ºC - - - - - Capacitance - PicoFarads Cies 30 IF - Amperes 80 25 VGE = 0V J 20 15 VGE = 15V J 10 1,000 Coes 100 Cres 5 f = 1 MHz 0 10 0 2 4 6 8 10 12 0 5 10 15 20 25 30 35 40 VCE - Volts VF - Volts Fig. 11. Reverse-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance 1 90 80 70 0.1 Z(th)JC - ºC / W IC - Amperes 60 50 40 30 20 TJ = 125ºC 10 RG = 10Ω dv / dt < 10V / ns 0 300 600 900 1200 1500 1800 2100 2400 2700 3000 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXBF10N300C Fig. 13. Forward-Bias Safe Operating Area @ TC = 25ºC Fig. 14. Forward-Bias Safe Operating Area @ TC = 75ºC 1000 1000 VCE(sat) Limit VCE(sat) Limit 100 100 IC - Amperes IC - Amperes 25µs 10 100µs 1ms 1 0.1 TJ = 150ºC 10ms TC = 25ºC Single Pulse 100ms DC 25µs 10 100µs 1ms 1 TJ = 150ºC 0.1 10ms TC = 75ºC Single Pulse 0.01 1 10 100 1,000 10,000 1 10 100 VCE - Volts --- 18 C 20 = 20A 16 2 12 I 3.0 C = 10A 14 VCE = 1500V 2.5 12 TJ = 125ºC 2.0 10 1.5 8 TJ = 25ºC 1.0 1 16 6 8 0.5 0 15 20 25 30 35 40 45 12 13 14 15 16 17 18 19 IC - Amperes Fig. 17. Inductive Switching Energy Loss vs. Junction Temperature Fig. 18. Inductive Turn-off Switching Times vs. Gate Resistance Eon - --- VCE = 1500V = 20A 12 2.0 10 I 1.5 C = 10A 8 1.0 0.5 35 45 55 65 75 85 95 105 TJ - Degrees Centigrade © 2013 IXYS CORPORATION, All Rights Reserved 115 t d(off) - - - - 1400 200 VCE = 1500V 180 I 1200 C 1000 = 20A 160 800 140 600 120 6 100 4 125 80 I C 400 = 10A 200 0 10 15 20 25 30 RG - Ohms 35 40 45 50 t d(off) - Nanoseconds C Eon - MilliJoules I tf i TJ = 125ºC, VGE = 15V 14 2.5 1600 220 16 RG = 10Ω , VGE = 15V 20 240 t f i - Nanoseconds Eoff 25 11 RG - Ohms 18 3.0 2 10 50 4.0 3.5 4 0.0 4 10 Eoff - MilliJoules Eon - MilliJoules 3 --- TJ = 125ºC , VGE = 15V Eoff - MilliJoules I VCE = 1500V Eon - Eoff 3.5 TJ = 125ºC , VGE = 15V Eon - MilliJoules Eoff - MilliJoules 4.0 24 4 10,000 Fig. 16. Inductive Switching Energy Loss vs. Collector Current 5 Eon - 1,000 VCE - Volts Fig. 15. Inductive Switching Energy Loss vs. Gate Resistance Eoff 100ms DC 0.01 IXBF10N300C Fig. 20. Inductive Turn-off Switching Times vs. Junction Temperature Fig. 19. Inductive Turn-off Switching Times vs. Collector Current 240 200 460 200 440 180 420 TJ = 125ºC 160 400 140 380 120 360 100 80 60 10 11 12 13 14 15 16 17 18 19 t d(off) - - - - VCE = 1500V 180 160 420 140 400 120 380 I C = 20A 360 320 80 340 300 60 20 25 35 45 55 t d(on) - - - - 60 20 45 C = 10A 10 30 0 25 30 115 320 125 35 40 45 tr i t d(on) - - - - 60 RG = 10Ω , VGE = 15V VCE = 1500V 25 50 20 40 TJ = 25ºC 15 30 TJ = 125ºC 10 20 5 15 20 t r i - Nanoseconds t r i - Nanoseconds 30 15 105 10 0 50 0 10 RG - Ohms t d(on) - Nanoseconds 75 C = 20A t d(on) - Nanoseconds VCE = 1500V 10 95 70 30 90 TJ = 125ºC, VGE = 15V I 85 35 105 I 75 Fig. 22. Inductive Turn-on Switching Times vs. Collector Current 60 40 65 TJ - Degrees Centigrade Fig. 21. Inductive Turn-on Switching Times vs. Gate Resistance tr i 440 I C = 10A IC - Amperes 50 460 100 340 TJ = 25ºC tfi t d(off) - Nanoseconds VCE = 1500V 480 RG = 10Ω , VGE = 15V t d(off) - Nanoseconds t f i - Nanoseconds t d(off) - - - - RG = 10Ω , VGE = 15V 220 t f i - Nanoseconds tfi 220 480 11 12 13 14 15 16 17 18 19 20 IC - Amperes Fig. 23. Inductive Turn-on Switching Times vs. Junction Temperature 35 50 tr i 30 45 VCE = 1500V 40 I C = 20A 20 35 15 30 I 10 C = 10A 25 5 t d(on) - Nanoseconds 25 t r i - Nanoseconds t d(on) - - - - RG = 10Ω , VGE = 15V 20 0 25 35 45 55 65 75 85 95 105 115 15 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS REF: B_10N300C(8M)5-06-13