IXBF15N300C

Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF15N300C VCES = 3000V IC110 = 15A VCE(sat)  6.0V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V VGES Continuous ± 20 V VGEM Transient ± 30 V 1 5 IC25 TC = 25°C 37 A IC110 TC = 110°C 15 A ICM TC = 25°C, 1ms 300 A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 10 Clamped Inductive Load ICM = 120 VCES  1500 A V TSC (SCSOA) VGE = 15V, TJ = 125°C, RG = 52, VCE = 1500V, Non-Repetitive 10 μs PC TC 300 W -55 ... +150 °C  TJM 150 °C  Tstg -55 ... +150 °C  300 260 °C °C 20..120 / 4.5..27 N/lb. 4000 V~ 5 g = 25°C TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s FC Mounting Force VISOL 50/60Hz, 5 Seconds Weight Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) IC = 250μA, VGE = 0V 3000 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = ± 20V VCE(sat) IC V Note 2, TJ = 125°C = 15A, VGE = 15V, Note 1 4.7 TJ = 125°C © 2013 IXYS CORPORATION, All Rights Reserved 5.0 1 = Gate 2 = Emitter Isolated Tab 5 = Collector Features   Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V~ Electrical Isolation High Blocking Voltage High Frequency Operation Advantages   Low Gate Drive Requirement High Power Density Applications Characteristic Values Min. Typ. Max. BVCES 2 5.0 V 25 5 μA mA ±200 nA 6.0 V  Switch-Mode and Resonant-Mode Power Supplies V DS100536(04/13) IXBF15N300C Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 18 IC = 15A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 15A, VGE = 15V, VCE = 1000V td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 15A, VGE = 15V VCE = 1500V, RG = 10 Note 3 Inductive load, TJ = 125°C IC = 15A, VGE = 15V VCE = 1500V, RG = 10 Note 3 RthJC RthCS ISOPLUS i4-PakTM (HV) Outline 30 S 6230 260 93 pF pF pF 267 33 99 nC nC nC 40 23 9.15 455 90 1.40 ns ns mJ ns ns mJ 38 20 9.15 515 150 2.75 ns ns mJ ns ns mJ 0.15 0.42 °C/W °C/W Pin 1 = Gate Pin2 = Emitter Pin 3 = Collector Tab 4 = Isolated Reverse Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max VF IF = 15A, VGE = 0V, Note 1 trr IF = 15A, VGE = 0V, -diF/dt = 100A/μs IRM QRM Notes: 5.0 VR = 100V, VGE = 0V V 706 ns 26 A 9.2 μC 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway. 3. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXBF15N300C Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 30 220 VGE = 15V 9V 25 200 7V VGE = 15V 13V 180 9V 160 15 IC - Amperes IC - Amperes 20 6V 10 140 120 100 80 7V 60 40 5 6V 20 5V 0 0 0 1 2 3 4 5 6 7 0 5 10 20 25 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 30 1.5 VGE = 15V 9V 7V 25 15 VCE - Volts VCE - Volts VGE = 15V 1.4 I C = 30A IC - Amperes 20 VCE(sat) - Normalized 1.3 6V 15 10 1.2 I 1.1 1.0 0.9 0.8 5 5V = 15A C I C = 7.5A 0.7 0 0.6 0 1 2 3 4 5 6 7 8 -50 -25 VCE - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 50 10 45 TJ = 25ºC 9 40 35 IC - Amperes VCE - Volts 8 7 I 6 5 C = 30A 30 25 TJ = 125ºC 25ºC - 40ºC 20 15 15A 10 4 5 7.5A 0 3 5 6 7 8 9 10 11 12 VGE - Volts © 2013 IXYS CORPORATION, All Rights Reserved 13 14 15 4.0 4.5 5.0 5.5 VGE - Volts 6.0 6.5 7.0 IXBF15N300C Fig. 7. Transconductance Fig. 8. Gate Charge 70 16 TJ = - 40ºC 60 25ºC VGE - Volts g f s - Siemens 50 40 125ºC 30 14 VCE = 1000V 12 I G = 10mA I C = 15A 10 8 6 20 4 10 2 0 0 10 20 30 40 0 50 0 40 80 120 IC - Amperes 160 200 280 Fig. 10. Capacitance Fig. 9. Forward Voltage Drop of Intrinsic Diode 10,000 50 TJ = 25ºC J Cies ----Capacitance - PicoFarads 125ºC 40 IF - Amperes 240 QG - NanoCoulombs 30 20 VGE = 0V 10 1,000 Coes 100 Cres VGE = 15V f = 1 MHz 0 0 1 2 3 4 5 6 7 8 10 9 0 5 10 15 20 25 30 35 40 VCE - Volts VF - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Reverse-Bias Safe Operating Area 1 140 120 Z(th)JC - ºC / W IC - Amperes 100 80 60 0.1 0.01 40 TJ = 125ºC 20 0 300 RG = 10Ω dv / dt < 10V / ns 600 900 1200 1500 1800 2100 2400 2700 3000 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 100 IXBF15N300C Fig. 13. Forward-Bias Safe Operating Area @ TC = 25ºC Fig. 14. Forward-Bias Safe Operating Area @ TC = 75ºC 1000 1000 VCE(sat) Limit VCE(sat) Limit 100 100 IC - Amperes IC - Amperes 25µs 10 100µs 1ms 1 25µs 10 100µs 1ms 1 10ms TJ = 150ºC 0.1 TC = 25ºC TC = 75ºC Single Pulse 100ms DC Single Pulse 10ms TJ = 150ºC 0.1 0.01 DC 1 10 100 1,000 10,000 1 10 100 VCE - Volts 8 --- 5 25 4 16 3 Eoff - MilliJoules 20 = 30A 3 2 10 TJ = 25ºC 12 I 2 C 1 = 15A 4 10 15 20 25 5 8 1 30 35 40 45 0 50 0 14 16 18 20 RG - Ohms 6 Eon - Eoff 24 26 28 30 Fig. 18. Inductive Turn-off Switching Times vs. Gate Resistance 2000 190 28 5 22 IC - Amperes Fig. 17. Inductive Switching Energy Loss vs. Junction Temperature tf i --24 RG = 10Ω , VGE = 15V 180 2 I C C = 30A 16 12 = 15A 1 8 1400 t f i - Nanoseconds I 3 1600 VCE = 1500V 1200 170 I 160 C = 15A I C 1000 = 30A 800 600 400 150 200 0 25 35 45 55 65 75 85 95 105 TJ - Degrees Centigrade © 2013 IXYS CORPORATION, All Rights Reserved 115 4 125 140 0 10 15 20 25 30 RG - Ohms 35 40 45 50 t d(off) - Nanoseconds 20 Eon - MilliJoules 4 1800 t d(off) - - - - TJ = 125ºC, VGE = 15V VCE = 1500V Eoff - MilliJoules 15 TJ = 125ºC Eon - MilliJoules C Eon - MilliJoules I 20 VCE = 1500V 24 5 --- TJ = 125ºC , VGE = 15V 4 VCE = 1500V Eon - Eoff 28 TJ = 125ºC , VGE = 15V 6 Eoff - MilliJoules Eon - 10,000 Fig. 16. Inductive Switching Energy Loss vs. Collector Current 32 Eoff 1,000 VCE - Volts Fig. 15. Inductive Switching Energy Loss vs. Gate Resistance 7 100ms 0.01 IXBF15N300C Fig. 19. Inductive Turn-off Switching Times vs. Collector Current Fig. 20. Inductive Turn-off Switching Times vs. Junction Temperature 240 t d(off) - - - - RG = 10Ω , VGE = 15V 200 540 200 160 480 TJ = 125ºC 140 460 120 440 100 TJ = 25ºC 80 60 14 16 18 20 22 24 26 28 tfi t d(off) - - - - VCE = 1500V 180 480 140 460 I C = 15A 120 440 I C = 30A 420 100 420 400 80 400 380 60 30 25 35 45 55 80 I C = 15A 20 40 0 25 30 380 125 35 40 45 t d(on) - - - 46 RG = 10Ω , VGE = 15V 35 44 TJ = 25ºC 30 42 25 40 TJ = 125ºC 20 0 20 115 VCE = 1500V t r i - Nanoseconds = 30A 40 15 105 38 15 50 36 14 RG - Ohms t d(on) - Nanoseconds 120 t d(on) - Nanoseconds t r i - Nanoseconds 40 160 VCE = 1500V 10 95 48 tr i t d(on) - - - - TJ = 125ºC, VGE = 15V C 85 45 200 I 75 Fig. 22. Inductive Turn-on Switching Times vs. Collector Current 100 60 65 TJ - Degrees Centigrade Fig. 21. Inductive Turn-on Switching Times vs. Gate Resistance 80 500 160 IC - Amperes tr i 520 t d(off) - Nanoseconds 500 t d(off) - Nanoseconds 180 540 RG = 10Ω , VGE = 15V 520 VCE = 1500V t f i - Nanoseconds 220 t f i - Nanoseconds tfi 220 560 16 18 20 22 24 26 28 30 IC - Amperes Fig. 23. Inductive Turn-on Switching Times vs. Junction Temperature 45 48 tr i 40 t d(on) - - - 46 RG = 10Ω , VGE = 15V 35 44 IC = 30A 30 25 42 40 20 t d(on) - Nanoseconds t r i - Nanoseconds VCE = 1500V 38 IC = 15A 15 25 35 45 55 65 75 85 95 105 115 36 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS REF: B_15N300C(9T)04-26-13