IXBF20N300

Not for New Design High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N300 VCES = 3000V IC110 = 14A VCE(sat)  3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 34 A IC110 TC = 110°C 14 A ICM TC = 25°C, 1ms 150 A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 20 Clamped Inductive Load ICM = 130 1500 A V PC TC = 25°C 150 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ TL Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s FC Mounting Force VISOL 50/60Hz, 1 Minute 1 5 1 = Gate 2 = Emitter Weight Nm/lb.in. 4000 V~ 5 g       Characteristic Values Min. Typ. Max. BVCES IC = 250µA, VGE = 0V 3000 VGE(th) IC = 250µA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES, VGE = 0V Note 2, TJ = 125°C IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = 20A, VGE = 15V, Note 1 TJ = 125°C © 2021 Littelfuse, Inc. 3.2 Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V~ Electrical Isolation High Blocking Voltage High Peak Current Capability Low Saturation Voltage Low Gate Drive Requirement High Power Density Applications V 2.7 5 = Collector Advantages  Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Isolated Tab Features  20..120 / 4.5..27 2 5.0 V 35 1.5 µA mA ±100 nA 3.2 V      Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches V DS100125C(6/21) IXBF20N300 Not for New Design Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfS Characteristic Values Min. Typ. Max. IC = 20A, VCE = 10V, Note 1 11 18 S 2230 pF 92 pF Cres 33 pF Qg 105 nC Cies Coes Qge VCE = 25V, VGE = 0V, f = 1MHz IC = 20A, VGE = 15V, VCE = 1000V Qgc td(on) tr td(off) tf td(on) tr td(off) tf Resistive Switching Times, TJ = 25°C IC = 20A, VGE = 15V VCE = 1250V, RG = 10 Resistive Switching Times, TJ = 125°C IC = 20A, VGE = 15V VCE = 1250V, RG = 10 13 nC 45 nC 64 ns 210 ns 300 ns 504 ns 68 ns 540 ns 300 ns 395 ns RthJC 0.83 RthCS 0.15 °C/W °C/W Reverse Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 20A, VGE = 0V 2.1 trr IF = 10A, VGE = 0V, -diF/dt = 100A/µs IRM VR = 100V, VGE = 0V V 1.35 µs 30 A Notes: 1. Pulse test, t  300s, duty cycle, d  2%. 2. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXBF20N300 Not for New Design Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 40 300 V GE = 25V 20V 15V 35 VGE = 25V 20V 250 200 25 20 I C - Amperes I C - Amperes 30 10V 15 15V 150 100 10V 10 50 5 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 2 4 6 8 10 14 16 18 20 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 1.8 40 VGE = 25V 20V 15V 35 VGE = 15V 1.6 30 I C = 40A VCE(sat) - Normalized IC - Amperes 12 VCE - Volts VCE - Volts 25 20 10V 15 10 1.4 I C = 20A 1.2 1.0 I C = 10A 0.8 5 5V 0 0.6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -50 -25 0 25 VCE - Volts 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 5.5 50 5.0 45 TJ = 25ºC 40 4.5 I C - Amperes VCE - Volts 35 4.0 I C = 40A 3.5 3.0 20A 30 25 TJ = 125ºC 25ºC - 40ºC 20 15 2.5 10 10A 2.0 5 0 1.5 5 7 9 11 13 15 VGE - Volts © 2021 Littelfuse, Inc. 17 19 21 23 25 3.5 4.0 4.5 5.0 5.5 6.0 6.5 VGE - Volts 7.0 7.5 8.0 8.5 IXBF20N300 Not for New Design Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 60 28 TJ = - 40ºC 24 50 25ºC 40 125ºC 16 I F - Amperes g f s - Siemens 20 12 30 TJ = 25ºC TJ = 125ºC 20 8 10 4 0 0 5 10 15 20 25 30 35 40 45 50 0 55 0 0.5 1 1.5 I C - Amperes Fig. 9. Gate Charge 2.5 3 Fig. 10. Capacitance 16 10,000 f = 1 MHz 12 Capacitance - PicoFarads VCE = 1kV I C = 20A I G = 10mA 14 VGE - Volts 2 VF - Volts 10 8 6 4 C ies 1,000 Coes 100 2 Cres 10 0 0 10 20 30 40 50 60 70 80 90 100 0 110 5 10 15 20 25 30 35 40 VCE - Volts QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Reverse-Bias Safe Operating Area 1 140 120 D = 0.50 Z(th)JC - K / W I C - Amperes 100 80 60 D = 0.20 0.1 D = 0.10 D = tp / T D = 0.05 40 TJ = 125ºC RG = 20Ω dv / dt < 10V / ns 20 tp D = 0.02 T D = 0.01 0 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 0.01 0.000001 VCE - Volts Littelfuse reserves the right to change limits, test conditions and dimensions. 0.00001 Single Pulse 0.0001 0.001 0.01 Pulse Width - Seconds 0.1 1 10 IXBF20N300 Not for New Design Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 700 RG = 10Ω , VGE = 15V VCE = 1250V 600 TJ = 125ºC 500 500 t r - Nanoseconds t r - Nanoseconds 700 RG = 10Ω , VGE = 15V VCE = 1250V 600 Fig. 14. Resistive Turn-on Rise Time vs. Collector Current I C = 20A 400 300 I C = 40A 400 300 200 200 100 100 0 TJ = 25ºC 0 25 35 45 55 65 75 85 95 105 115 125 10 15 20 25 T J - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 800 tr 750 TJ = 125ºC, VGE = 15V VCE = 1250V 200 td(on) tf 180 120 600 100 550 80 500 60 450 t f - Nanoseconds I C = 20A, 40A 30 40 50 60 70 td(off) 500 400 290 300 270 230 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade td(off) 420 380 600 340 400 300 200 260 550 tf 500 TJ = 125ºC, VGE = 15V VCE = 1250V 1600 td(off) 1400 1200 450 1000 400 800 I C = 20A 350 600 I C = 40A 300 400 250 t d(off) - Nanoseconds 800 t f - Nanoseconds tf RG = 10Ω, VGE = 15V VCE = 1250V Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 600 460 t d(off) - Nanoseconds t f - Nanoseconds 250 I C = 40A 100 80 Fig. 17. Resistive Turn-off Switching Times vs. Collector Current 1000 310 I C = 20A RG - Ohms 1200 330 200 40 20 350 t d(off) - Nanoseconds 140 10 40 RG = 10Ω, VGE = 15V VCE = 1250V 600 160 700 650 35 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 700 t d(on) - Nanoseconds t r - Nanoseconds 850 30 I C - Amperes 200 TJ = 125ºC, 25ºC 0 220 10 15 20 25 I C - Amperes © 2021 Littelfuse, Inc. 30 35 40 200 0 10 20 30 40 50 60 70 80 RG - Ohms IXYS REF: B_20N300 (5P) 2-16-21-C Not for New Design IXBF20N300 ISOPLUS i4-Pak Outline 1 = Gate 2 = Emitter 3,4 = Colector Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. Littelfuse reserves the right to change limits, test conditions and dimensions.