IXBF32N300

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF32N300 VCES = 3000V IC90 = 22A VCE(sat)  3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 40 A IC90 TC = 90°C 22 A ICM TC = 25°C, 1ms 250 A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 10 Clamped Inductive Load ICM = 80 VCES  2400 A V PC TC = 25°C 160 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C  300 °C  TJ TL Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s FC Mounting Force VISOL 50/60Hz, 1 Minute 1 5 1 = Gate 2 = Emitter Nm/lb.in. 3000 V 5 g Weight     Characteristic Values Min. Typ. Max. BVCES IC = 250µA, VGE = 0V 3000 VGE(th) IC = 250µA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES, VGE = 0V IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = 32A, VGE = 15V, Note 1 2.8 TJ = 125°C © 2021 Littelfuse, Inc. 3.5 Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 3000V Electrical Isolation High Blocking Voltage International Standard Package Low Conduction Losses Low Gate Drive Requirement High Power Density Applications: V Note 2, TJ = 125°C 5 = Collector Advantages  Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Isolated Tab Features  20..120 / 4.5..27 2 5.0 V 50 2 µA mA ±100 nA 3.2 V      Switched-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches V DS100119A(6/21) IXBF32N300 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfS Characteristic Values Min. Typ. Max. IC = 32A, VCE = 10V, Note 1 16 26 S 3140 pF 124 pF Cres 40 pF Qg 142 nC Cies Coes Qge VCE = 25V, VGE = 0V, f = 1MHz IC = 32A, VGE = 15V, VCE = 1000V Qgc td(on) tr td(off) tf td(on) tr td(off) tf Resistive Switching Times, TJ = 25°C IC = 32A, VGE = 15V VCE = 1250V, RG = 2 Resistive Switching Times, TJ = 125°C IC = 32A, VGE = 15V VCE = 1250V, RG = 2 20 nC 57 nC 50 ns 185 ns 160 ns 720 ns 58 ns 515 ns 165 ns 630 ns RthJC 0.78 RthCS 0.15 °C/W °C/W Reverse Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 32A, VGE = 0V 2.1 V trr IF = 16A, VGE = 0V, -diF/dt = 100A/µs 1.5 µs IRM VR = 100V, VGE = 0V 33 A Notes: 1. Pulse test, t  300s, duty cycle, d  2%. 2. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXBF32N300 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 500 VGE = 25V 20V 15V 60 VGE = 25V 450 20V 400 50 40 I C - Amperes I C - Amperes 350 10V 30 20 15V 300 250 200 10V 150 100 10 50 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 4 2 4 6 8 10 12 14 16 18 20 VCE - Volts VCE - Volts Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 1.8 V GE = 25V 20V 15V 60 VGE = 15V 1.6 I C = 64A 40 VCE(sat) - Normalized I C - Amperes 50 10V 30 20 1.4 I C = 32A 1.2 1.0 I C = 16A 0.8 10 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0.6 5 -50 -25 0 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 50 75 100 125 150 Fig. 6. Input Admittance 6.0 90 80 TJ = 25ºC 5.5 70 5.0 60 4.5 4.0 I C - Amperes V CE - Volts 25 TJ - Degrees Centigrade I C = 64A 3.5 3.0 32A 50 40 TJ = 125ºC 25ºC - 40ºC 30 20 2.5 10 16A 2.0 5 7 9 11 13 0 15 VGE - Volts © 2021 Littelfuse, Inc. 17 19 21 23 25 3.5 4.0 4.5 5.0 5.5 6.0 6.5 VGE - Volts 7.0 7.5 8.0 8.5 9.0 IXBF32N300 Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode 45 100 TJ = - 40ºC 40 90 80 35 70 30 125ºC I F - Amperes g f s - Siemens 25ºC 25 20 15 60 50 TJ = 25ºC TJ = 125ºC 40 30 10 20 5 10 0 0 10 20 30 40 50 60 70 80 90 0 100 0 0.5 1 1.5 I C - Amperes 2.5 3 Fig. 10. Capacitance Fig. 9. Gate Charge 16 10,000 f = 1 MHz 12 Capacitance - PicoFarads V CE = 1kV I C = 32A I G = 10mA 14 VGE - Volts 2 VF - Volts 10 8 6 4 Cies 1,000 C oes 100 2 Cres 0 0 20 40 60 80 100 120 10 140 0 5 10 15 20 25 30 35 40 VCE - Volts QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Reverse-Bias Safe Operating Area 1 90 80 70 Z(th)JC - K / W I C - Amperes 60 50 40 30 0.1 0.01 TJ = 125ºC RG = 10Ω dv / dt < 10V / ns 20 10 0 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 0.001 0.00001 VCE - Volts Littelfuse reserves the right to change limits, test conditions and dimensions. 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXBF32N300 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 800 800 700 600 t r - Nanoseconds 600 t r - Nanoseconds RG = 2Ω, V GE = 15V VCE = 1250V 700 RG = 2Ω, VGE = 15V VCE = 1250V I C = 32A 500 400 I C = 64A 300 TJ = 125ºC 500 400 300 200 200 100 100 TJ = 25ºC 0 0 25 35 45 55 65 75 85 95 105 115 15 125 20 25 30 35 Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 450 60 t f - Nanoseconds 65 I C = 32A I C = 64A 400 55 350 7 8 9 10 11 12 13 14 180 170 600 160 I C = 32A 500 150 400 140 I C = 64A 130 200 120 25 35 45 55 65 75 85 95 105 115 RG - Ohms T J - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance td(off) 600 150 TJ = 125ºC, 25ºC 130 200 110 25 30 35 40 45 I C - Amperes © 2021 Littelfuse, Inc. 50 55 60 65 400 350 700 300 600 250 I C = 32A 500 200 I C = 64A 400 t d(off) - Nanoseconds 170 t d(off) - Nanoseconds 800 td(off) TJ = 125ºC, VGE = 15V VCE = 1250V 800 190 20 tf 900 1000 400 450 210 t f - Nanoseconds tf RG = 2Ω, V GE = 15V VCE = 1250V 125 1000 230 1200 t f - Nanoseconds 190 700 15 1400 15 td(off) 300 50 6 65 t d(off) - Nanoseconds 500 5 60 RG = 2Ω, VGE = 15V VCE = 1250V 800 70 4 tf 900 550 3 55 200 75 t d(on) - Nanoseconds t r - Nanoseconds td(on) TJ = 125ºC, VGE = 15V VCE = 1250V 2 50 1000 80 tr 45 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 650 600 40 I C - Amperes TJ - Degrees Centigrade 150 300 100 200 50 2 3 4 5 6 7 8 9 10 11 12 13 14 15 RG - Ohms IXYS REF: B_32N300 (8P) 3-16-21-A IXBF32N300 ISOPLUS i4-Pak Outline 1 = Gate 2 = Emitter 3,4 = Colector Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. Littelfuse reserves the right to change limits, test conditions and dimensions.