IXBF40N160

IXBF 40N160 IC25 VCES VCE(sat) tf High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM = 28 A = 1600 V = 6.2 V = 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = 15/0 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH Ptot TC = 25°C Symbol Conditions V ± 20 V 28 16 A A 40 0.8VCES A 250 W Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 20 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 2 mA; VGE = VCE ICES VCE = 0.8VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES VCE = 0 V; VGE = ± 20 V td(on) tr td(off) tf Inductive load, TVJ = 125°C VCE = 960 V; IC = 25 A VGE = 15/0 V; RG = 22 Ω Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 15 V; IC = 20 A VF (reverse conduction); IF = 20A 6.2 6.9 4 RthJC IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 1600 7.1 V V 8 V 0.4 mA mA 500 nA 0.8 200 60 300 40 ns ns ns ns 3300 130 pF nC 2.5 V Applications • switched mode power supplies • DC-DC converters • resonant converters • lamp ballasts • laser generators, x ray generators 0.5 K/W 0648 Symbol • High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - fast switching for high frequency operation - reverse conduction capability • ISOPLUS i4-PACTM high voltage package - isolated back surface - enlarged creepage towards heatsink - enlarged creepage between high voltage pins - application friendly pinout - high reliability - industry standard outline 1-4 IXBF 40N160 Component Symbol Dimensions in mm (1 mm = 0.0394") Conditions Maximum Ratings TVJ Tstg VISOL IISOL ≤ 1 mA; 50/60 Hz FC mounting force with clip Symbol Conditions dS,dA dS,dA C pin - E pin pin - backside metal RthCH with heatsink compound °C °C 2500 V~ 20...120 N Characteristic Values min. typ. max. 7 5.5 mm mm 0.15 K/W 9 g 0648 Weight -55...+150 -55...+125 © 2006 IXYS All rights reserved 2-4 IXBF 40N160 70 70 VGE = 17V TJ = 25°C VGE = 17V TJ = 125°C 60 60 15V 13V IC - Amperes IC - Amperes 15V 50 40 30 20 50 13V 40 30 20 10 10 0 0 0 2 4 6 8 10 12 14 16 0 18 2 4 8 10 12 14 16 18 VCE - Volts VCE - Volts Fig. 1 Typ. Output Characteristics Fig. 2 Typ. Output Characteristics 70 70 VCE = 20V 60 60 50 50 IF - Amperes IC - Amperes 6 40 TJ = 25°C TJ = 125°C 30 40 30 TJ = 25°C 20 20 10 10 0 0.0 0 5 6 7 8 9 10 11 12 13 0.5 1.0 VGE - Volts 2.5 3.0 3.5 4.0 Fig. 4 Typ. Characteristics of Reverse Conduction 100 VCE = 600V IC = 20A 14 2.0 VF - Volts Fig. 3 Typ. Transfer Characteristics 16 1.5 TJ = 125°C ICM - Amperes VGE - Volts 12 10 8 6 10 TJ = 125°C VCEK < VCES IXBF 40N140 IXBF 40N160 1 4 2 0 0 20 40 60 80 100 120 140 QG - nanocoulombs 0 400 800 1200 1600 VCE - Volts Fig. 6 Reverse Based Safe Operating Area RBSOA 0648 Fig. 5 Typ. Gate Charge characteristics 0.1 © 2006 IXYS All rights reserved 3-4 IXBF 40N160 400 VCE = 960V VGE = 15V IC = 20A TJ = 125°C VCE = 960V VGE = 15V 40 RG = 22Ω td(off) - nanoseconds tfi - nanoseconds 50 TJ = 125°C 30 20 10 300 200 100 0 0 0 10 20 30 40 0 10 20 30 40 RG - Ohms IC - Amperes Fig. 7 Typ. Fall Time Fig. 8 Typ. Turn Off Delay Time 1 ZthJC - K/W 0.1 0.01 Single Pulse 0.001 0.0001 0.00001 IXBF40 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds 0648 Fig. 9 Typ. Transient Thermal Impedance © 2006 IXYS All rights reserved 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.