IXBF42N300

High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF42N300 VCES = 3000V IC110 = 24A VCE(sat)  3.0V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V VGES Continuous ± 25 V VGEM Transient ± 35 V IC25 TC = 25°C 60 A IC110 TC = 110°C 24 A ICM TC = 25°C, 1ms 380 A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 20 Clamped Inductive Load ICM = 84 1500 A V TSC (SCSOA) VGE = 15V, TJ = 125°C, RG = 82, VCE = 1500V, Non-Repetitive 10 µs PC TC = 25°C 240 W -55 ... +150 °C TJM 150 °C  Tstg -55 ... +150 °C  300 °C TJ TL Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s FC Mounting Force VISOL 50/60Hz, 1 Minute 1 5 1 = Gate 2 = Emitter     N/lb 3000 V~ 5 g Weight  Characteristic Values Min. Typ. Max. BVCES IC = 1mA, VGE = 0V 3000 VGE(th) IC = 1mA, VCE = VGE 3.0 ICES VCE = 0.8 • VCES, VGE = 0V Note 2, TJ = 125°C IGES VCE = 0V, VGE = ± 25V VCE(sat) IC = 42A, VGE = 15V, Note 1 V 50 µA µA  ±200 nA  3.0 V 250 2.5 3.1 Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 3000V~ Electrical Isolation High Blocking Voltage High Peak Current Capability Low Saturation Voltage FBSOA Rated SCSOA Rated Low Gate Drive Requirement High Power Density Applications 5.0  TJ = 125°C © 2021 Littelfuse, Inc.  V 5 = Collector Advantages  Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Isolated Tab Features  20..120 / 4.5..27 2  Laser Generators Capacitor Discharge Circuits AC Switches Protection Circuits V DS100325B(7/21) IXBF42N300 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfS Characteristic Values Min. Typ. Max. IC = 42A, VCE = 10V, Note 1 28 Cies Coes VCE = 25V, VGE = 0V, f = 1MHz Cres RGi Gate Input Resistance IC = 42A, VGE = 15V, VCE = 1000V Qgc td(on) Resistive Switching Times, TJ = 25°C tr IC = 42, VGE = 15V td(off) VCE = 1500V, RG = 20 tf td(on) Resistive Switching Times, TJ = 125°C tr IC = 42, VGE = 15V td(off) VCE = 1500V, RG = 20 tf S 4780 pF 170 pF 56 pF  3.0 Qg Qge 45  200 nC 28 nC 75 nC 72 ns 330 ns 445 ns 610 ns 72 ns 580 ns 460 ns 490 ns RthJC 0.52 °C/W RthCS 0.15 °C/W Reverse Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max VF IF = 42A, VGE = 0V, Note 1 2.5 V trr IF = 21A, VGE = 0V, -diF/dt = 100A/µs 1.7 µs IRM VR = 100V, VGE = 0V 43 A Notes: 1. Pulse test, t < 300s, duty cycle, d < 2%. 2. Device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway. Additional provisions for lead-to-lead isolation are required at V CE > 1250V. Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405 B2 6,710,463 6,727,585 7,005,734 B2 6,759,692 7,063,975 B2 6,771,478 B2 7,071,537 7,157,338B2 IXBF42N300 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 90 320 VGE = 25V 20V 15V 80 70 15V 240 60 10V I C - Amperes I C - Amperes VGE = 25V 20V 280 50 40 30 200 10V 160 120 80 20 40 10 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 1 2 3 4 5 6 7 8 VCE - Volts VCE - Volts Fig. 3. Output Characteristics @ TJ = 125ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 90 9 10 1.8 VGE = 25V 20V 15V 80 VGE = 15V 1.6 I C - Amperes 60 VCE(sat) - Normalized 70 10V 50 40 30 I C = 84A 1.4 1.2 I C = 42A 1.0 20 I C = 21A 0.8 10 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0.6 4.5 -50 -25 0 25 VCE - Volts 50 75 Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 125 150 Fig. 6. Input Admittance 200 5.5 TJ = 25ºC 5.0 180 TJ = - 40ºC 25ºC 125ºC 160 4.5 140 I C - Amperes VCE - Volts 100 TJ - Degrees Centigrade 4.0 3.5 I C = 84A 3.0 42A 120 100 80 60 2.5 40 2.0 21A 20 0 1.5 5 7 9 11 13 15 VGE - Volts © 2021 Littelfuse, Inc. 17 19 21 23 25 4 4.5 5 5.5 6 6.5 7 VGE - Volts 7.5 8 8.5 9 9.5 IXBF42N300 Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 140 80 TJ = - 40ºC 70 120 TJ = 25ºC 100 25ºC 50 I F - Amperes g f s - Siemens 60 125ºC 40 30 TJ = 125ºC 80 60 40 20 20 10 0 0 0 20 40 60 80 100 120 140 160 180 200 0 0.5 1 1.5 Fig. 9. Gate Charge 2.5 3 3.5 Fig. 10. Capacitance 16 10,000 VCE = 1000V I C = 42A I G = 10mA 14 Cies Capacitance - PicoFarads 12 VGE - Volts 2 VF - Volts I C - Amperes 10 8 6 4 1,000 Coes 100 C res 2 f = 1 MHz 10 0 0 20 40 60 80 100 120 140 160 180 0 200 5 10 15 20 25 30 35 QG - NanoCoulombs VCE - Volts Fig. 11. Reverse-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance 40 1 90 80 70 0.1 Z(th)JC - K / W I C - Amperes 60 50 40 0.01 30 20 TJ = 125ºC RG = 20Ω dv / dt < 10V / ns 10 0 250 500 750 1000 1250 1500 1750 2000 2250 2500 0.001 0.00001 VCE - Volts Littelfuse reserves the right to change limits, test conditions and dimensions. 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXBF42N300 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Collector Current 650 650 RG = 20Ω , VGE = 15V VCE = 1250V 600 600 TJ = 125ºC 550 t r - Nanoseconds t r - Nanoseconds 550 500 450 I C = 84A 400 I C = 42A 500 450 400 350 350 300 300 250 RG = 20Ω , VGE = 15V VCE = 1250V TJ = 25ºC 250 25 35 45 55 65 75 85 95 105 115 125 40 45 50 55 60 1800 320 RG = 20Ω, VGE = 15V VCE = 1250V 700 200 800 160 I C = 42A 600 120 400 80 t f - Nanoseconds 240 1000 200 460 I C = 42A 500 440 400 420 I C = 84A 80 100 120 140 160 380 25 180 35 45 55 65 75 85 95 105 115 RG - Ohms TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Collector Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 800 t d(off) 3600 tf 1000 900 TJ = 25ºC 500 440 400 420 TJ = 125ºC 800 2800 2400 I C = 42A 700 2000 600 1600 500 1200 400 300 3200 800 I C = 84A 400 300 200 380 40 45 50 55 60 65 I C - Amperes © 2021 Littelfuse, Inc. 70 75 80 85 400 200 0 20 40 60 80 100 120 RG - Ohms 140 160 180 t d(off) - Nanoseconds 460 t d(off) - Nanoseconds 600 t d(off) TJ = 125ºC, VGE = 15V VCE = 1250V 480 t f i - Nanoseconds tf RG = 20Ω, VGE = 15V VCE = 1250V 125 1100 500 700 t f - Nanoseconds 400 200 40 60 480 600 300 40 t d(off) 280 I C = 84A 20 85 t d(off) - Nanoseconds 1200 80 500 tf t d(on) - Nanoseconds t r - Nanoseconds t d(on) TJ = 125ºC, VGE = 15V VCE = 1250V 1400 75 800 360 tr 70 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 1600 65 I C - Amperes TJ - Degrees Centigrade IXBF42N300 Fig. 19. Forward-Bias Safe Operating Area @ T C = 25ºC Fig. 20. Forward-Bias Safe Operating Area @ T C = 115ºC 1000 1000 VCE(sat) Limit V CE(sat) Limit 100 100 25µs 10 100µs I C - Amperes I C - Amperes 10 1ms 1 10ms 0.1 25µs 100µs 1 1ms 0.1 100ms DC TJ = 150ºC 0.01 10ms TJ = 150ºC 0.01 TC = 25ºC Single Pulse 0.001 100ms TC = 115ºC Single Pulse DC 0.001 1 10 100 1000 10000 1 VCE - Volts 10 100 1000 10000 VCE - Volts Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS REF: B_42N300 (8M) 6-22-21 IXBF42N300 ISOPLUS i4-Pak Outline 1 = Gate 2 = Emitter 3,4 = Colector Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc.