IXBF50N360

Advance Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor High Voltage, High Frequency IXBF50N360 VCES = 3600V IC110 = 28A VCE(sat)  2.9V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3600 V VCGR TJ = 25°C to 150°C, RGE = 1M 3600 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 70 A IC110 TC = 110°C 28 A ICM TC = 25°C, 1ms 420 A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 5 Clamped Inductive Load ICM = 200 0.8 • VCES A V TSC (SCSOA) VGE = 15V, TJ = 125°C, RG = 10, VCE = 1500V, Non-Repetitive PC TC 1 5 1 = Gate 2 = Emitter μs 290 W - 55 ... +150 °C  TJM 150 °C  Tstg - 55 ... +150 °C  300 260 °C °C 30..170 / 7..36 N/lb 4000 V~ 8 g = 25°C TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s FC Mounting Force with Clip VISOL 50/60Hz, 5 Seconds Weight Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BV CES IC = 250μA, VGE = 0V 3600 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = 0.8 • VCES, VGE = 0V Note 2, TJ = 100°C IGES VCE = 0V, VGE = ± 20V VCE(SAT) IC = 50A, VGE = 15V, Note 1 TJ = 125°C © 2014 IXYS CORPORATION, All Rights Reserved Isolated Tab 5 = Collector Features 10 TJ 2 2.4 3.0  Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V~ Electrical Isolation High Blocking Voltage High Frequency Operation Advantages   Low Gate Drive Requirement High Power Density Applications  V 5.0 V 25 μA μA ±200 nA 2.9 V V 50  Switch-Mode and Resonant-Mode Power Supplies  Uninterruptible Power Supplies (UPS)  Laser Generators  Capacitor Discharge Circuits  AC Switches DS100623(7/14) IXBF50N360 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 24 Cies Coes Cres Qg(on) Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf IC = 50A, VCE = 10V, Note 1 VCE = 25V, VGE = 0V, f = 1MHz 40 S 3990 195 100 pF pF pF 210 27 77 nC nC nC 46 420 ns ns 205 1750 ns ns 44 845 ns ns 210 1670 ns ns 0.15 0.43 °C/W °C/W IC = 50A, VGE = 15V, VCE = 1000V Resistive load, TJ = 25°C IC = 50A, VGE = 15V VCE = 960V, RG = 5 Resistive load, TJ = 125°C IC = 50A, VGE = 15V VCE = 960V, RG = 5 RthJC RthCS ISOPLUS i4-PakTM (HV) Outline A E Q A2 D 2 3 S T R 1 U 4 L1 L c e e1 b1 A1 b Pin 1 = Gate Pin2 = Emitter Pin 3 = Collector Tab 4 = Isolated Reverse Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max VF IF = 50A, VGE = 0V, Note 1 trr IF = 25A, VGE = 0V, -diF/dt = 100A/μs IRM QRM Notes: 3.0 VR = 100V, VGE = 0V V 1.7 μs 48 A 40 μC 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway. ADVANCETECHNICALINFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXBF50N360 Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 100 300 VGE = 25V 21V 17V 15V 13V 11V 250 13V 11V 9V 200 I C - Amperes I C - Amperes 80 VGE = 25V 19V 15V 60 40 150 9V 100 7V 20 7V 50 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 5 10 VCE - Volts 1.8 100 VGE = 25V 19V 15V 13V 11V 25 VGE = 15V VCE(sat) - Normalized 1.6 9V I C - Amperes 20 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 80 15 VCE - Volts 60 40 7V 20 I C = 100A 1.4 I C = 50A 1.2 1.0 I C = 25A 0.8 5V 0.6 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -50 5 -25 0 25 VCE - Volts 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 7 160 TJ = 25ºC 140 6 120 4 I C - Amperes VCE - Volts 5 I C = 100A 3 100 80 60 50A TJ = 125ºC 25ºC 40 2 25A - 40ºC 20 0 1 6 7 8 9 10 11 12 13 VGE - Volts © 2014 IXYS CORPORATION, All Rights Reserved 14 15 3 4 5 6 7 VGE - Volts 8 9 10 IXBF50N360 Fig. 8. Gate Charge Fig. 7. Transconductance 16 70 TJ = - 40ºC 60 I C = 50A I G = 10mA 12 50 25ºC 40 VGE - Volts g f s - Siemens VCE = 1000V 14 125ºC 30 20 10 8 6 4 10 2 0 0 0 20 40 60 80 100 120 140 160 0 180 20 40 60 I C - Amperes 80 100 120 140 160 180 200 220 QG - NanoCoulombs Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Capacitance 300 10,000 TJ = 25ºC 125ºC Capacitance - PicoFarads J 250 I F - Amperes 200 150 100 VGE = 0V Cies 1,000 Coes 100 Cres VGE = 15V 50 f = 1 MHz 0 10 0 1 2 3 4 5 6 7 0 5 10 15 20 25 30 35 40 VCE - Volts VF - Volts Fig. 11. Reverse-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance 240 1 200 Z (th)JC - ºC / W I C - Amperes 160 120 80 0.1 0.01 TJ = 125ºC 40 RG = 5Ω dv / dt < 10V / ns 0 200 600 1000 1400 1800 2200 2600 3000 3400 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXBF50N360 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 1000 1400 RG = 5Ω , VGE = 15V 900 RG = 5Ω , VGE = 15V 1200 VCE = 960V t r - Nanoseconds 800 t r - Nanoseconds Fig. 14. Resistive Turn-on Rise Time vs. Collector Current I C = 100A 700 600 I C = 50A 500 VCE = 960V 1000 TJ = 125ºC 800 600 400 400 TJ = 25ºC 200 300 200 0 25 35 45 55 65 75 85 95 105 115 125 25 35 45 55 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 1200 tr 1100 td(on) - - - - I C = 50A, 100A 900 70 800 50 700 30 600 220 RG = 5Ω, VGE = 15V 15 20 25 30 35 I C = 50A 1600 190 1200 180 I C = 100A tf td(off) - - - - RG = 5Ω, VGE = 15V 800 25 40 280 35 45 55 75 85 95 105 115 160 125 200 1200 180 TJ = 125ºC, 25ºC 800 160 400 140 105 75 85 95 I C - Amperes © 2014 IXYS CORPORATION, All Rights Reserved t f - Nanoseconds 1600 td(off) - - - - 1000 900 VCE = 960V 1800 800 1600 700 I C = 50A 1400 600 I C = 100A 1200 500 1000 400 800 300 600 200 400 100 5 10 15 20 25 RG - Ohms 30 35 40 t d(off) - Nanoseconds 220 t d(off) - Nanoseconds 2000 1100 TJ = 125ºC, VGE = 15V 2000 240 65 tf 2200 VCE = 960V 55 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 2400 260 2400 45 170 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Collector Current 2800 200 1400 1000 10 10 210 RG - Ohms t f - Nanoseconds 105 230 td(off) - - - - 1800 t f - Nanoseconds 90 35 95 t d(off) - Nanoseconds 1000 25 85 VCE = 960V t d(on) - Nanoseconds t r - Nanoseconds tf 2000 110 VCE = 960V 3200 75 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 2200 130 TJ = 125ºC, VGE = 15V 5 65 I C - Amperes IXBF50N360 Fig. 20. Forward-Bias Safe Operating Area @ T C = 75ºC Fig. 19. Forward-Bias Safe Operating Area @ T C = 25ºC 1000 1000 VCE(sat) Limit VCE(sat) Limit 100 25µs 10 100µs 1ms 1 TJ = 150ºC 0.1 I C - Amperes I C - Amperes 100 10 25µs 100µs 1 1ms TJ = 150ºC 0.1 TC = 25ºC Single Pulse TC = 75ºC Single Pulse 10ms DC 100ms 10ms 100ms DC 0.01 0.01 1 10 100 1,000 10,000 VCE - Volts 1 10 100 1,000 10,000 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS REF: B_50N360(H8) 7-25-14 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.