IXBF9N160G

IXBF 9N160 G IC25 VCES VCE(sat) tf High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM = 7A = 1600 V = 4.9 V = 70 ans Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions Maximum Ratings VCES VGES TVJ = 25°C to 150°C IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = 10/0 V; RG = 27 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH Ptot TC = 25°C Symbol Conditions VCE(sat) IC = 5 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 0.5 mA; VGE = VCE ICES VCE = 0.8VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C 1600 ± 20 V V 7 4 A A 12 0.8·VCES A 70 W Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 4.9 5.6 3.5 7 V V 5.5 V 0.1 mA mA 500 nA 0.1 IGES VCE = 0 V; VGE = ± 20 V td(on) tr td(off) tf Inductive load, TVJ = 125°C VCE = 960 V; IC = 5 A VGE = 10/0 V; RG = 27 Ω 140 200 120 70 ns ns ns ns Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 10 V; IC = 5 A 550 34 pF nC VF (reverse conduction); IF = 5 A 3.6 V RthJC IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved Applications • switched mode power supplies • DC-DC converters • resonant converters • lamp ballasts • laser generators, x ray generators 1.75 K/W 0648 Symbol • High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - MOSFET compatible control 10 V turn on gate voltage - fast switching for high frequency operation - reverse conduction capability • ISOPLUS i4-PACTM high voltage package - isolated back surface - enlarged creepage towards heatsink - enlarged creepage between high voltage pins - application friendly pinout - high reliability - industry standard outline 1-4 IXBF 9N160 G Component Conditions Maximum Ratings TVJ Tstg VISOL IISOL ≤ 1 mA; 50/60 Hz FC mounting force with clip Symbol Conditions dS,dA dS,dA pin 2 - pin 5 pin - backside metal RthCH with heatsink compound -55...+150 -55...+125 °C °C 2500 V~ 20...120 N Characteristic Values min. typ. max. 7 5.5 Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved mm mm 0.15 K/W 9 g 0648 Symbol Dimensions in mm (1 mm = 0.0394") 2-4 IXBF 9N160 G 30 30 TJ = 25°C VGE = 17V TJ = 125°C 15V 13V 25 15V VGE = 17V 25 IC - Amperes IC - Amperes 11V 20 9V 15 10 7V 5 13V 11V 20 9V 15 10 7V 5 0 0 0 2 4 6 8 10 12 14 16 0 18 2 4 6 8 10 12 14 16 18 VCE - Volts VCE - Volts Fig. 1 Typ. Output Characteristics Fig. 2 Typ. Output Characteristics 30 30 VCE = 20V 25 TJ = 25°C TJ = 25°C TJ = 125°C IF - Amperes IC - Amperes 25 20 15 10 TJ = 125°C 20 15 10 5 5 0 0 4 6 8 10 12 0 14 2 VGE - Volts 4 6 8 10 VF - Volts Fig. 3 Typ. Transfer Characteristics Fig. 4 Typ. Characteristics of Reverse Conduction 16 15 VCE = 600V IC = 5A 14 ICM - Amperes VGE - Volts 12 10 8 6 10 TJ = 125°C VCEK < VCES 5 IXBF 9N140G IXBF 9N160G 4 2 0 10 20 30 40 50 QG - nanocoulombs Fig. 5 Typ. Gate Charge characteristics IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 0 0 400 800 1200 1600 VCE - Volts Fig. 6 Reverse Biased Safe Operating Area RBSOA 0648 0 3-4 IXBF 9N160 G 140 250 tfi - nanoseconds 120 td(off )- nanoseconds VCE = 960V VGE = 10V RG = 27Ω TJ = 125°C 100 80 60 40 VCE = 960V VGE = 10V IC = 5A TJ = 125°C 200 150 100 50 0 0 2 4 6 8 10 12 14 16 0 IC - Amperes 10 20 30 40 50 60 Rg - Ohms Fig. 7 Typ. Fall Time Fig. 8 Typ. Turn Off Delay Time 10 ZthJC - K/W 1 0.1 Single Pulse 0.01 0.001 0.0001 IXBF 9-140/160G 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 0648 Fig. 9 Typ. Transient Thermal Impedance 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.