IXBH10N300HV

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBA10N300HV IXBH10N300HV VCES = 3000V IC110 = 10A VCE(sat)  2.8V TO-263HV (IXBA..HV) G E Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 34 10 88 A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 10 Clamped Inductive Load ICM = 80 1500 A V TSC (SCSOA) VGE = 15V, TJ = 125°C, RG = 82, VCE = 1500V, Non-Repetitive 10 µs PC TC = 25°C 180 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C Features 300 260 °C °C  10..65 / 2.2..14.6 N/lb  1.13/10 Nm/lb.in 2.5 6.0 g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s FC Mounting Force (TO-263HV) Md Mounting Torque (TO-247HV) Weight TO-263HV TO-247HV C (Tab) TO-247HV (IXBH..HV) G E C G = Gate E = Emitter  C (Tab) C = Collector Tab = Collector High Blocking Voltage Anti-Parallel Diode Low Conduction Losses Advantages   Low Gate Drive Requirement High Power Density Applications Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250µA, VGE = 0V 3000 VGE(th) IC = 250µA, VCE = VGE 3.0 ICES VCE = 0.8 • VCES, VGE = 0V IGES VCE = 0V, VGE = ± 20V VCE(sat) IC TJ = 125°C = 10A, VGE = 15V, Note 1 2.2 TJ = 125°C © 2021 Littelfuse, Inc. 2.7  V  5.0 V  25 500 µA µA  ±100 nA 2.8 V  Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches V DS100608C(6/21) IXBA10N300HV IXBH10N300HV Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfS 6 IC = 10A, VCE = 10V, Note 1 11 S 1044 pF 42 pF Cres 14 pF Qg 46 nC Cies Coes Qge VCE = 25V, VGE = 0V, f = 1MHz IC = 10A, VGE = 15V, VCE = 1000V Qgc td(on) tr td(off) tf td(on) tr td(off) tf Resistive Switching Times, TJ = 25°C IC = 10A, VGE = 15V VCE = 960V, RG = 10 Resistive Switching Times, TJ = 125°C IC = 10A, VGE = 15V VCE = 960V, RG = 10 5 nC 20 nC 36 ns 340 ns 100 ns 1850 ns 40 ns 765 ns 120 ns 2010 ns RthJC RthCS 0.69 TO-247HV 0.21 °C/W °C/W Reverse Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 10A, VGE = 0V trr IRM QRM IF = 5A, VGE = 0V, -diF/dt = 100A/µs Note 1: Pulse test, t  300µs, duty cycle, d  2%. 2.7 1.6 23 18.6 VR = 100V, VGE = 0V V µs A µC Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXBA10N300HV IXBH10N300HV Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 20 140 V GE = 15V 13V 11V 10V 9V 18 16 14V 100 12 I C - Amperes 14 I C - Amperes VGE = 15V 120 8V 7V 10 8 6V 6 13V 80 12V 11V 60 10V 40 9V 4 8V 20 2 0 0 0.5 1 1.5 2 2.5 3 6V 0 3.5 0 5 10 20 25 VCE - Volts Fig. 3. Output Characteristics @ TJ = 125ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 30 1.7 VGE = 15V 13V 11V 10V 9V 18 16 VGE = 15V 1.6 1.5 14 12 VCE(sat) - Normalized 8V 7V 10 8 6V 6 I C = 20A 1.4 1.3 1.2 I C = 10A 1.1 1.0 0.9 4 I C = 5A 5V 2 0.8 0.7 0 0 0.5 1 1.5 2 2.5 3 3.5 -50 4 -25 0 VCE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 32 5.0 28 TJ = 25ºC 4.5 24 3.5 IC - Amperes 4.0 VCE - Volts 15 VCE - Volts 20 IC - Amperes 7V 5V I C = 20A 3.0 10A 2.5 20 16 12 TJ = 125ºC 25ºC 8 2.0 - 40ºC 4 5A 0 1.5 5 6 7 8 9 10 VGE - Volts © 2021 Littelfuse, Inc. 11 12 13 14 15 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VGE - Volts 6.5 7.0 7.5 8.0 8.5 IXBA10N300HV IXBH10N300HV Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode 18 60 TJ = 25ºC 125ºC TJ = - 40ºC 16 50 25ºC 12 10 40 IF - Amperes g f s - Siemens 14 125ºC 8 6 30 VGE = 0V 20 VGE = 15V 4 10 2 0 0 5 10 15 20 25 30 0 35 0 0.5 1 1.5 2 I C - Amperes 3 3.5 4 4.5 5 5.5 Fig. 10. Capacitance Fig. 9. Gate Charge 10,000 16 f = 1 MHz 12 Capacitance - PicoFarads VCE = 1kV I C = 10A I G = 10mA 14 VGE - Volts 2.5 VF - Volts 10 8 6 4 1,000 Cies 100 C oes 2 Cres 0 0 5 10 15 20 25 30 35 40 45 10 50 0 5 10 15 20 25 30 35 40 VCE - Volts QG - NanoCoulombs Fig. 11. Reverse-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance 90 1 80 70 Z(th)JC - K / W I C - Amperes 60 50 40 0.1 30 TJ = 125ºC RG = 10Ω dv / dt < 10V / ns 20 10 0 500 1000 1500 2000 2500 3000 0.01 0.00001 VCE - Volts Littelfuse reserves the right to change limits, test conditions and dimensions. 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXBA10N300HV IXBH10N300HV Fig. 14. Resistive Turn-on Rise Time vs. Collector Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 800 1200 RG = 10Ω , VGE = 15V VCE = 960V RG = 10Ω , VGE = 15V VCE = 960V 1000 600 I C = 10A 500 I C = 20A 400 800 t r - Nanoseconds t r - Nanoseconds 700 TJ = 125ºC 600 400 TJ = 25ºC 300 200 200 0 25 35 45 55 65 75 85 95 105 115 125 5 6 7 8 9 10 11 TJ - Degrees Centigrade 1100 td(on) 16 17 18 19 20 2200 I C = 10A 50 600 130 2000 120 t f - Nanoseconds 60 140 I C = 20A 1800 110 1600 100 I C = 10A 1400 90 1200 80 1000 70 t d(off) - Nanoseconds 800 t d(on) - Nanoseconds 70 I C = 20A td(off) RG = 10Ω, VGE = 15V VCE = 960V 80 900 t r - Nanoseconds 15 150 tf 2400 TJ = 125ºC, VGE = 15V VCE = 960V 700 14 2600 90 tr 13 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 1000 12 I C - Amperes 40 500 30 10 20 30 40 50 60 70 80 90 800 100 60 25 35 45 55 RG - Ohms 3600 td(off) t f - Nanoseconds TJ = 125ºC 130 110 TJ = 25ºC 1600 90 1200 70 800 50 11 13 I C - Amperes © 2021 Littelfuse, Inc. 125 15 17 19 21 td(off) 500 2000 400 I C = 10A 1600 300 I C = 20A 1200 200 800 100 400 0 10 20 30 40 50 60 RG - Ohms 70 80 90 100 t d(off) - Nanoseconds 150 9 115 TJ = 125ºC, VGE = 15V VCE = 960V 2400 t d(off) - Nanoseconds 2800 7 105 600 tf 170 RG = 10Ω, VGE = 15V V CE = 960V 5 95 2800 t f - Nanoseconds tf 2000 85 Fig. 28. Resistive Turn-off Switching Times vs. Gate Resistance 190 2400 75 T J - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Collector Current 3200 65 IXBA10N300HV IXBH10N300HV Fig. 19. Forward-Bias Safe Operating Area @ TC = 25ºC Fig. 20. Forward-Bias Safe Operating Area @ TC = 75ºC 100 100 V CE(sat) Limit VCE(sat) Limit 10 IC - Amperes IC - Amperes 10 25µs 1 100µs 1 25µs 100µs 1ms 1ms 0.1 0.1 TJ = 150ºC TC = 25ºC Single Pulse TJ = 150ºC TC = 75ºC Single Pulse 10ms DC 10ms 100ms DC 100ms 0.01 0.01 1 10 100 1,000 10,000 1 VCE - Volts 10 100 1,000 10,000 VCE - Volts Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS REF: B_10N300 (3T-B8) 3-01-21 IXBA10N300HV IXBH10N300HV TO-263HV Outline 1 = Gate 2 = Emitter 3 = Collector TO-247HV Outline E R E1 A 0P Q 0P1 A2 S D1 D 4 D2 1 2 3 L1 D3 L e e1 A3 2X A1 c E2 E3 4X b b1 3X 1 = Gate 2,4 = Emitter 3 = Collector © 2021 Littelfuse, Inc. 3X IXBA10N300HV IXBH10N300HV Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. Littelfuse reserves the right to change limits, test conditions and dimensions.